A six transistor SRAM cell for single-ended sensing is described along with related memory architecture. The cell comprises a bistable circuit connected to complementary bit lines through a pair of passgate transistors. One of the passgate transistors has a lower threshold voltage than the other transistor. The lower threshold voltage is used to couple the cell to a single-ended sense amplifier through one of the bit lines. In one embodiment fewer than all the bit lines in an array are precharged in order to reduce power consumption in the array.