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US06529051B2 Frequency multiplier without spurious oscillation 有权
倍频器无杂散振荡

  • Patent Title: Frequency multiplier without spurious oscillation
  • Patent Title (中): 倍频器无杂散振荡
  • Application No.: US09793695
    Application Date: 2001-02-27
  • Publication No.: US06529051B2
    Publication Date: 2003-03-04
  • Inventor: Tsuneo Tokumitsu , Osamu Baba
  • Applicant: Tsuneo Tokumitsu , Osamu Baba
  • Priority: JP2000-057930 20000229
  • Main IPC: H03B1900
  • IPC: H03B1900
Frequency multiplier without spurious oscillation
Abstract:
A damping resistance 20 is connected between the drain D of an FET 10 and a first end T3 of an output transmission line 13, and a damping resistance 21 is connected between the drain D of an FET 11 and the first end T3. The source of the FET 10 and the gate of the FET 11 are connected to a ground plane on the back surface of a substrate through a via which has a parasitic inductance when a multiplied frequency exceeds 20 GHz. The gate of the FET 10 and the source of the FET 11 receive microwaves of the same frequency and phase through an input transmission line 12.
Abstract(Chinese):

阻尼电阻20连接在FET10的漏极D和输出传输线13的第一端T3之间，阻尼电阻21连接在FET 11的漏极D和第一端T3之间。 FET10的源极和FET11的栅极通过在倍频超过20GHz时具有寄生电感的通孔连接到衬底的背面上的接地面。 FET10的栅极和FET11的源极通过输入传输线12接收相同频率和相位的微波。

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