发明授权
- 专利标题: Plasma treatment method and apparatus
- 专利标题(中): 等离子体处理方法和装置
-
申请号: US10079600申请日: 2002-02-19
-
公开(公告)号: US06544380B2公开(公告)日: 2003-04-08
- 发明人: Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
- 申请人: Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
- 优先权: JP6-106045 19940420; JP6-113587 19940428; JP6-133638 19940524; JP6-142409 19940601
- 主分类号: H05H100
- IPC分类号: H05H100
摘要:
An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.
公开/授权文献
- US20020088547A1 Plasma treatment method and apparatus 公开/授权日:2002-07-11