公开(公告)号：US06264788B1

公开(公告)日：2001-07-24

申请号：US09556133

申请日：2000-04-21

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.

摘要翻译： 一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于 固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活 物种影响水。

公开(公告)号：US6106737A

公开(公告)日：2000-08-22

申请号：US94451

申请日：1998-06-10

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

摘要翻译： 一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于 固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活 物种影响晶圆。

公开(公告)号：US06544380B2

公开(公告)日：2003-04-08

申请号：US10079600

申请日：2002-02-19

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

摘要翻译： 一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。 该腔室还包括一个可拆卸的挡板，其围绕电极配合。 为了开始处理，将基板放置在电极上，并且室被排出或供应气体。 然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置 房间的开放。 这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

公开(公告)号：US6074518A

公开(公告)日：2000-06-13

申请号：US225010

申请日：1999-01-04

申请人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Hiroshi Tsuchiya ,  Masayuki Tomoyasu ,  Yukio Naito ,  Kazuya Nagaseki ,  Ryo Nonaka ,  Keizo Hirose ,  Yoshio Fukasawa ,  Akira Koshiishi ,  Isao Kobayashi

发明人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Hiroshi Tsuchiya ,  Masayuki Tomoyasu ,  Yukio Naito ,  Kazuya Nagaseki ,  Ryo Nonaka ,  Keizo Hirose ,  Yoshio Fukasawa ,  Akira Koshiishi ,  Isao Kobayashi

IPC分类号： H01J37/32 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/32623

摘要： A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

摘要翻译： 等离子体处理装置包括室，以及上部电极和下部电极，其平行地设置在腔室中以预定间隔彼此相对，用于限定电极之间的等离子体产生区域。 被处理物体安装在下电极上。 向电极提供RF功率，使得在电极之间产生等离子体，从而对被处理物进行等离子体处理。 在室内的等离子体产生区域周围设置圆柱形接地电极，用于将等离子体封装在等离子体产生区域中，并具有用于通过处理气体的多个通孔。

公开(公告)号：US5919332A

公开(公告)日：1999-07-06

申请号：US659387

申请日：1996-06-06

申请人： Akira Koshiishi ,  Masahiro Ogasawara ,  Keizo Hirose ,  Kazuya Nagaseki ,  Riki Tomoyoshi ,  Makoto Aoki

发明人： Akira Koshiishi ,  Masahiro Ogasawara ,  Keizo Hirose ,  Kazuya Nagaseki ,  Riki Tomoyoshi ,  Makoto Aoki

IPC分类号： C23C16/509 ,  H01J37/32 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/5096 ,  H01J37/32633 ,  H01J2237/022 ,  Y10S156/915

摘要： A lower insulating member 13 is arranged around a suscepter 6 as a lower electrode, and an upper insulating member 31 is arranged around an upper electrode 21. An outer end portion 31a of the upper insulating member is positioned outside an lower insulating member 13, to be lower than the upper surface of a wafer W. The narrowest distance between the lower insulating member 13 and the upper insulating member 31 is arranged to be smaller than a gap G between electrodes. Diffusion of a plasma generated between electrodes is restricted and prevented from spreading to the sides, so that inner walls of a processing container 3 are not sputtered.

摘要翻译： 下部绝缘构件13布置在作为下电极的可移动器6周围，并且上绝缘构件31布置在上电极21周围。上绝缘构件的外端部31a位于下绝缘构件13的外侧， 低于晶片W的上表面。下绝缘构件13与上绝缘构件31之间的最窄距离被布置成小于电极之间的间隙G. 在电极之间产生的等离子体的扩散被限制并防止扩散到侧面，使得处理容器3的内壁不被溅射。

公开(公告)号：US20100326601A1

公开(公告)日：2010-12-30

申请号：US12879926

申请日：2010-09-10

申请人： Akira Koshiishi ,  Keizo Hirose

发明人： Akira Koshiishi ,  Keizo Hirose

IPC分类号： C23F1/08

CPC分类号： B23K10/00 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32165

摘要： In the plasma processing apparatus of the present invention, a first electrode (21) for connecting a high frequency electric power source (40) in a chamber is arranged to be opposed to a second electrode (5). A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member (51) for being able to absorb harmonics of the high frequency electric power source (40) so as to come in contact with a peripheral portion or circumference of a face of the first electrode 21, which is opposite the second electrode (5). The harmonic absorbing member absorbs the reflected harmonic before the harmonic returns to the high frequency electric power source. By absorbing the harmonic in this manner, the standing wave due to the harmonic will be effectively prevented from being generated, and the density of plasma is made even.

摘要翻译： 在本发明的等离子体处理装置中，在室内连接高频电源（40）的第一电极（21）与第二电极（5）相对配置。 将待处理的基板（W）放置在电极之间。 提供了一种能够吸收高频电源（40）的谐波的谐波吸收部件（51），与第一电极21的与第一电极21的面相反的周边部分或周边接触 第二电极（5）。 谐波吸收构件在谐波返回到高频电源之前吸收反射谐波。 通过以这种方式吸收谐波，将有效地防止由于谐波引起的驻波而产生等离子体的密度。

公开(公告)号：US07537672B1

公开(公告)日：2009-05-26

申请号：US09959745

申请日：2000-04-27

申请人： Akira Koshiishi ,  Keizo Hirose

发明人： Akira Koshiishi ,  Keizo Hirose

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01J37/3255 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32165 ,  H01J2237/3323

摘要： In the plasma processing apparatus of the present invention, a first electrode (21) for connecting a high frequency electric power source (40) in a chamber is arranged to be opposed to a second electrode (5). A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member (51) for being able to absorb harmonics of the high frequency electric power source (40) so as to come in contact with a peripheral portion or circumference of a face of the first electrode 21, which is opposite the second electrode (5). The harmonic absorbing member absorbs the reflected harmonic before the harmonic returns to the high frequency electric power source. By absorbing the harmonic in this manner, the standing wave due to the harmonic will be effectively prevented from being generated, and the density of plasma is made even.

摘要翻译： 在本发明的等离子体处理装置中，在室内连接高频电源（40）的第一电极（21）与第二电极（5）相对配置。 将待处理的基板（W）放置在电极之间。 提供了一种能够吸收高频电源（40）的谐波的谐波吸收部件（51），与第一电极21的与第一电极21的面相反的周边部分或周边接触 第二电极（5）。 谐波吸收构件在谐波返回到高频电源之前吸收反射谐波。 通过以这种方式吸收谐波，将有效地防止由于谐波引起的驻波而产生等离子体的密度。

公开(公告)号：US20050061445A1

公开(公告)日：2005-03-24

申请号：US10984943

申请日：2004-11-10

申请人： Akira Koshiishi ,  Keizo Hirose

发明人： Akira Koshiishi ,  Keizo Hirose

IPC分类号： H01J37/32 ,  C23F1/00

CPC分类号： B23K10/00 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32165

摘要： In the plasma processing apparatus of the present invention, a first electrode (21) for connecting a high frequency electric power source (40) in a chamber is arranged to be opposed to a second electrode (5). A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member (51) for being able to absorb harmonics of the high frequency electric power source (40) so as to come in contact with a peripheral portion or circumference of a face of the first electrode 21, which is opposite the second electrode (5). The harmonic absorbing member absorbs the reflected harmonic before the harmonic returns to the high frequency electric power source. By absorbing the harmonic in this manner, the standing wave due to the harmonic will be effectively prevented from being generated, and the density of plasma is made even.

摘要翻译： 在本发明的等离子体处理装置中，在室内连接高频电源（40）的第一电极（21）与第二电极（5）相对配置。 将待处理的基板（W）放置在电极之间。 提供了一种能够吸收高频电源（40）的谐波的谐波吸收部件（51），与第一电极21的与第一电极21的面相反的周边部分或周边接触 第二电极（5）。 谐波吸收构件在谐波返回到高频电源之前吸收反射谐波。 通过以这种方式吸收谐波，将有效地防止由于谐波引起的驻波而产生等离子体的密度。

公开(公告)号：US08080126B2

公开(公告)日：2011-12-20

申请号：US12195842

申请日：2008-08-21

申请人： Akira Koshiishi ,  Keizo Hirose

发明人： Akira Koshiishi ,  Keizo Hirose

IPC分类号： H01L21/00

CPC分类号： H01J37/3255 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32165 ,  H01J2237/3323

摘要： In the plasma processing apparatus of the present invention, a first electrode for connecting a high frequency electric power source in a chamber is arranged to be opposed to a second electrode. A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member for being able to absorb harmonics of the high frequency electric power source so as to come in contact with a peripheral portion or circumference of a face of the first electrode 21, which is opposite the second electrode. The harmonic absorbing member absorbs the reflected harmonic before the harmonic returns to the high frequency electric power source. By absorbing the harmonic in this manner, the standing wave due to the harmonic will be effectively prevented from being generated, and the density of plasma is made even.

摘要翻译： 在本发明的等离子体处理装置中，在室内连接高频电源的第一电极配置成与第二电极相对。 将待处理的基板（W）放置在电极之间。 提供了一种能够吸收高频电源的谐波的谐波吸收构件，以便与第二电极相对的第一电极21的面的周边部分或周边接触。 谐波吸收构件在谐波返回到高频电源之前吸收反射谐波。 通过以这种方式吸收谐波，将有效地防止由于谐波引起的驻波而产生等离子体的密度。

公开(公告)号：US5900103A

公开(公告)日：1999-05-04

申请号：US424127

申请日：1995-04-19

申请人： Masayuki Tomoyasu ,  Akira Koshiishi

发明人： Masayuki Tomoyasu ,  Akira Koshiishi

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  H05H1/00

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.