利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

29 条记录 (耗时 0.038 秒)

    Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor
    4.
    发明授权
    Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor 失效
    电极，感受体，等离子体处理装置及制作电极和感受体的方法

    公开(公告)号：US07337745B1

    公开(公告)日：2008-03-04

    申请号：US09667777

    申请日：2000-09-22

    申请人： Mitsuaki Komino ,  Hideaki Amano ,  Shosuke Endo ,  Toshiaki Fujisato ,  Yasuharu Sasaki

    发明人： Mitsuaki Komino ,  Hideaki Amano ,  Shosuke Endo ,  Toshiaki Fujisato ,  Yasuharu Sasaki

    IPC分类号： C23C16/509 ,  C23F1/00 ,  H01L21/306 ,  C23C16/46

    CPC分类号： H01L21/6831

    摘要： A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40A and 40B disposed so as to sandwich the heater 38 from above and from below, and a ceramic electrostatic chuck 28 for attracting and holding an object to be treated, W. The electrostatic chuck is joined to an upper surface of the upper ceramic-metal composite 40A. The electrostatic chuck 28 has nearly the same coefficient of linear thermal expansion as that of the upper ceramic-metal composite 40A. Thus, peeling or cracking of the electrostatic chuck 28 due to the difference in thermal expansion and contraction between the electrostatic chuck 28 and the upper ceramic-metal composite 40A can be prevented.

    摘要翻译： 基座24包括设置在平面状态的加热器38，设置成从上下夹着加热器38的上下陶瓷金属复合体40A和40B以及用于吸引和保持加热器38的陶瓷静电卡盘28 静电卡盘与上部陶瓷 - 金属复合材料40A的上表面接合。静电卡盘28具有与上部陶瓷 - 金属复合材料40A的线性热膨胀系数几乎相同的线性热膨胀系数 因此，可以防止由于静电卡盘28和上部陶瓷 - 金属复合材料40A之间的热膨胀和收缩的差异导致的静电卡盘28的剥离或破裂。

    Plasma treatment method and apparatus
    5.
    发明授权
    Plasma treatment method and apparatus 有权

    公开(公告)号：US06431115B1

    公开(公告)日：2002-08-13

    申请号：US09863860

    申请日：2001-05-23

    申请人： Mitsuaki Komino ,  Yoshio Sakamoto

    发明人： Mitsuaki Komino ,  Yoshio Sakamoto

    IPC分类号： C23C1600

    摘要： Claimed and disclosed is a treatment apparatus for treating a substrate under decompressed atmosphere, comprising: a chamber, an exhausting means for exhausting the chamber, a first electrode provided in the chamber on which the substrate is mounted or held, a second electrode provided in the chamber opposing the first electrode, a liquid supply source containing a liquid material from which a process gas is generated, a housing provided between the liquid supply source and the chamber to be communicated to the liquid supply source and the chamber, a porous heating unit arranged in the housing for generating the process gas by heating the liquid material supplied from the liquid supply source into the housing in order to vaporize the liquid material, a process gas introduction section provided between the housing and the chamber for guiding the process gas from the housing to the chamber and vibrators to vibrate the porous heating unit. The porous heating unit which is capable of generating heat for itself has an element for electrically heating the porous heating unit. This porous heating unit is arranged in the housing for generating the process gas by heating the liquid material supplied from the liquid supply source into the housing in order to vaporize the liquid material. The treatment apparatus further comprises a process gas introduction section disposed between the housing and the chamber for guiding the process gas from the housing to the chamber.

    Transfer module and cluster system for semiconductor manufacturing process
    6.
    发明授权
    Transfer module and cluster system for semiconductor manufacturing process 失效
    转移模块和集群系统用于半导体制造过程

    公开(公告)号：US06634845B1

    公开(公告)日：2003-10-21

    申请号：US09595930

    申请日：2000-06-16

    申请人： Mitsuaki Komino

    发明人： Mitsuaki Komino

    IPC分类号： B65G4905

    CPC分类号： H01L21/67161 ,  B65G49/06 ,  B65G2249/02 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748

    摘要： A number of process chambers connected to a transfer module can be increased after a cluster system provided with the transfer module is initially established. The transfer module transfers an object to be processed between a transfer chamber and at least one process chamber connected to the transfer chamber. A housing of the transfer module defines the transfer chamber, the housing having a substantially rectangular cross section so that a plurality of the housings are connectable to each other. A movable part is provided in the transfer chamber, the movable part being movable along a base surface provided in the housing of the transfer module. A transfer part is provided on the movable part, the transfer part holding the object to be processed and being movable between the transfer chamber and the process chamber. A drive mechanism drives the movable part, and a control unit controls motion of the movable part.

    摘要翻译： 在设置有传送模块的集群系统最初建立之后，可以增加连接到传送模块的多个处理室。 传送模块在传送室和连接到传送室的至少一个处理室之间传送要处理的物体。 转移模块的壳体限定传送室，壳体具有基本矩形的横截面，使得多个壳体可彼此连接。 可移动部分设置在传送室中，可移动部分可沿设置在传送模块的壳体中的基面移动。 传递部分设置在可移动部分上，传送部分保持被处理物体并且可在传送室和处理室之间移动。 驱动机构驱动可动部，控制部控制可动部的动作。

    Plasma processing apparatus
    8.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US5376213A

    公开(公告)日：1994-12-27

    申请号：US104475

    申请日：1993-07-28

    申请人： Yoichi Ueda ,  Mitsuaki Komino ,  Koichi Kazama

    发明人： Yoichi Ueda ,  Mitsuaki Komino ,  Koichi Kazama

    IPC分类号： C23C16/458 ,  C23C16/46 ,  C23F1/02

    CPC分类号： H01L21/67126 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  H01L21/68785

    摘要： A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained is formed in the cooling block. The cold of the cooling block is transmitted to a wafer on the susceptor to cool it while it is being etched. The ceramics heater adjusts the temperature of the wafer cooled. Liquid nitrogen is circulated in the bore in the cooling block, passing through coolant passages defined by a pair of joint devices which connect the bottom of the process chamber and the cooling block to each other. Each of the joint devices includes an upper conductive connector secured to the cooling block, a lower conductive connector secured to the chamber bottom, and an electrical- and thermal-insulating ring for connecting both of the connectors to each other while keeping them electrical- and thermal-insulated.

    摘要翻译： 等离子体蚀刻装置包括设置在铝制处理室中的晶片安装座。 晶片支架包括铝制基座，加热器固定框架和冷却块，并且陶瓷加热器附接到加热器固定框架。 在冷却块中形成有容纳液氮的孔。 冷却块的冷却被传送到基座上的晶片，以在其被蚀刻时使其冷却。 陶瓷加热器调节冷却晶片的温度。 液氮在冷却块的孔中循环，穿过由连接处理室的底部和冷却块的一对联接装置限定的冷却剂通道。 每个联合装置包括固定到冷却块的上部导电连接器，固定到室底部的下部导电连接器，以及用于将两个连接器彼此连接的电绝缘环和热绝缘环，同时保持它们的电气和 绝热。

    HEATING APPARATUS
    9.
    发明申请
    HEATING APPARATUS 审中-公开
    加热装置

    公开(公告)号：US20100200566A1

    公开(公告)日：2010-08-12

    申请号：US12300979

    申请日：2007-05-14

    申请人： Mitsuaki Komino ,  Kenji Saito

    发明人： Mitsuaki Komino ,  Kenji Saito

    IPC分类号： H05B3/68 ,  H05B3/06

    CPC分类号： C23C16/46 ,  H01L21/67109

    摘要： The present invention is to provide a heating apparatus available to reduce temperature quickly with efficient cooling effects in the case of reducing the temperature of a chamber or the like. A substrate processing apparatus 1 comprises a heating unit 100 in a chamber inner space 23 surrounded by a processing chamber 11 and a cover 12. The heating unit 100 is provided by a planer heating body 113 between an outer shell 111 and an inner shell 112. The heating unit generates heat when electricity is carried to the planar heat generating body 113, and heats the chamber inner space 23 to a desired temperature. At a boundary section of the outer shell 111 and the planar shaped heating body 113 of the heating unit 100, a cooling medium flow path 114 is spirally arranged along the circumference surface of the heating unit 100. At the time of reducing temperature, the cooling medium is permitted to flow in the cooling medium flow path 114 to forcibly cool the chamber inner space 23 and the substrate processing apparatus 1, and the temperature is rapidly reduced.

    摘要翻译： 本发明提供一种可以在降低室等的温度的情况下快速降低温度的加热装置和有效的冷却效果。 基板处理装置1包括由处理室11和盖12包围的室内空间23中的加热单元100.加热单元100由外壳111和内壳112之间的平面加热体113设置。 当电被传送到平面发热体113时，加热单元产生热量，并将室内空间23加热到期望的温度。 在加热单元100的外壳111和平面状加热体113的边界部分，沿着加热单元100的圆周表面螺旋地设置冷却介质流路114.在降温时，冷却 允许介质在冷却介质流路114中流动，以强制冷却室内空间23和基板处理装置1，并且迅速降低温度。

    Drying processing method and apparatus using same
    10.
    发明授权
    Drying processing method and apparatus using same 失效
    干燥处理方法及其使用方法

    公开(公告)号：US6134807A

    公开(公告)日：2000-10-24

    申请号：US79768

    申请日：1998-05-15

    申请人： Mitsuaki Komino ,  Osamu Uchisawa

    发明人： Mitsuaki Komino ,  Osamu Uchisawa

    IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/08 ,  F26B7/00

    CPC分类号： H01L21/67034

    摘要： A drying processing apparatus for supplying a dry gas to a processing chamber 35, which houses therein semiconductor wafers W, to dry the semiconductor wafers W, including a heater 32 for heating N.sub.2 gas serving as a carrier gas; a vapor generator 34 for making IPA misty by using the N.sub.2 gas heated by the heater 32 and for heating the IPA to produce the dry gas; and a flow control element 36 for supplying a predetermined rate of N.sub.2 gas to the processing chamber 35. Thus, it is possible to improve the efficiency of heat transfer of N.sub.2 gas, and it is possible to increase the amount of produced IPA gas and decrease the time to produce IPA gas. In addition, it is possible to prevent the turbulence of atmosphere in the processing chamber 35 after the drying processing is completed.

    摘要翻译： 一种用于将干燥气体供给到容纳半导体晶片W的处理室35以干燥半导体晶片W的干燥处理设备，该半导体晶片W包括用于加热作为载气的N 2气体的加热器32; 蒸汽发生器34，用于通过使用由加热器32加热的N 2气体使IPA发生雾化，并加热IPA以产生干燥气体; 以及用于向处理室35提供预定速率的N 2气体的流量控制元件36.因此，可以提高N 2气体的传热效率，并且可以增加产生的IPA气体的量并减少 产生“近期行动计划”气体的时间。 此外，干燥处理完成后，可以防止处理室35内的气氛紊乱。