公开(公告)号：US06544380B2

公开(公告)日：2003-04-08

申请号：US10079600

申请日：2002-02-19

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

摘要翻译： 一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。 该腔室还包括一个可拆卸的挡板，其围绕电极配合。 为了开始处理，将基板放置在电极上，并且室被排出或供应气体。 然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置 房间的开放。 这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

公开(公告)号：US06264788B1

公开(公告)日：2001-07-24

申请号：US09556133

申请日：2000-04-21

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.

摘要翻译： 一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于 固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活 物种影响水。

公开(公告)号：US6106737A

公开(公告)日：2000-08-22

申请号：US94451

申请日：1998-06-10

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

摘要翻译： 一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于 固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活 物种影响晶圆。

公开(公告)号：US6074518A

公开(公告)日：2000-06-13

申请号：US225010

申请日：1999-01-04

申请人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Hiroshi Tsuchiya ,  Masayuki Tomoyasu ,  Yukio Naito ,  Kazuya Nagaseki ,  Ryo Nonaka ,  Keizo Hirose ,  Yoshio Fukasawa ,  Akira Koshiishi ,  Isao Kobayashi

发明人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Hiroshi Tsuchiya ,  Masayuki Tomoyasu ,  Yukio Naito ,  Kazuya Nagaseki ,  Ryo Nonaka ,  Keizo Hirose ,  Yoshio Fukasawa ,  Akira Koshiishi ,  Isao Kobayashi

IPC分类号： H01J37/32 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/32623

摘要： A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

摘要翻译： 等离子体处理装置包括室，以及上部电极和下部电极，其平行地设置在腔室中以预定间隔彼此相对，用于限定电极之间的等离子体产生区域。 被处理物体安装在下电极上。 向电极提供RF功率，使得在电极之间产生等离子体，从而对被处理物进行等离子体处理。 在室内的等离子体产生区域周围设置圆柱形接地电极，用于将等离子体封装在等离子体产生区域中，并具有用于通过处理气体的多个通孔。

公开(公告)号：US06423242B1

公开(公告)日：2002-07-23

申请号：US09437447

申请日：1999-11-10

申请人： Masayuki Kojima ,  Yoshifumi Tahara ,  Masayuki Tomoyasu ,  Akira Koshiishi

发明人： Masayuki Kojima ,  Yoshifumi Tahara ,  Masayuki Tomoyasu ,  Akira Koshiishi

IPC分类号： C03C1500

CPC分类号： H01L21/76897 ,  C03C17/3435 ,  C03C2218/33 ,  H01J37/32082 ,  H01L21/31116

摘要： When in a chamber, an upper electrode and a lower electrode (suscepter) are provided opposite to each other and with a to-be-treated substrate supported by the lower electrode, the high-frequency electric field is formed between the upper electrode and the lower electrode to generate plasma of the process gas while introducing the process gas into the chamber held to the reduced pressure, and an etching is provided to the to-be-treated substrate with this plasma, the high frequency in the range from 50 to 150 MHZ, for example, 60 MHz, is applied to the upper electrode, and the high frequency in the range from 1 to 4 MHz, for example, 2 MHz, is applied to the lower electrode.

摘要翻译： 当在一个室中，上电极和下电极（副电极）彼此相对地设置有被下电极支撑的待处理衬底，高频电场形成在上电极和 下部电极产生处理气体的等离子体，同时将工艺气体引入保持在减压状态的室中，并且利用该等离子体向被处理衬底提供蚀刻，高频在50至150范围内 向上电极施加例如60MHz的MHZ，向下电极施加1〜4MHz范围的高频，例如2MHz。

公开(公告)号：US5900103A

公开(公告)日：1999-05-04

申请号：US424127

申请日：1995-04-19

申请人： Masayuki Tomoyasu ,  Akira Koshiishi

发明人： Masayuki Tomoyasu ,  Akira Koshiishi

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  H05H1/00

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

公开(公告)号：US07505879B2

公开(公告)日：2009-03-17

申请号：US11003829

申请日：2004-12-06

申请人： Masayuki Tomoyasu ,  Hin Oh ,  Hideki Tanaka

发明人： Masayuki Tomoyasu ,  Hin Oh ,  Hideki Tanaka

IPC分类号： G06F7/60

CPC分类号： H01J37/32935

摘要： According to the present invention, multivariate analysis model expressions are generated for a plasma processing apparatus 100A and a plasma processing apparatus 100B by executing a multivariate analysis of detection data provided by a plurality of sensors included in each plasma processing apparatus when the plasma processing apparatuses 100A and 100B operate based upon first setting data. Then, when the plasma processing apparatus 100A operates based upon new second setting data, detection data provided by the plurality of sensors in the plasma processing apparatus 100A are used to generate a corresponding multivariate analysis model expression, and by using the new multivariate analysis model expression corresponding to the plasma processing apparatus 100A generated based upon the second setting data and to the plasma processing apparatus 100B, a multivariate analysis model expression corresponding to the new second setting data is generated four the plasma processing apparatus 100B.

摘要翻译： 根据本发明，通过对等离子体处理装置100A中的等离子体处理装置100A中包含的多个传感器所提供的检测数据进行多元分析，为等离子体处理装置100A和等离子体处理装置100B生成多变量分析模型表达式 和100B基于第一设定数据进行操作。 然后，当等离子体处理装置100A基于新的第二设定数据进行动作时，由等离子体处理装置100A中的多个传感器提供的检测数据用于生成相应的多变量分析模型表达式，并且通过使用新的多变量分析模型表达式 对应于基于第二设定数据生成的等离子体处理装置100A和等离子体处理装置100B，生成与等离子体处理装置100B相对应的新的第二设定数据的多变量分析模型表达式。

公开(公告)号：US07289866B2

公开(公告)日：2007-10-30

申请号：US11030049

申请日：2005-01-07

申请人： Masayuki Tomoyasu

发明人： Masayuki Tomoyasu

IPC分类号： G06F19/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32935 ,  G05B2219/32201 ,  G05B2219/45031 ,  H01J37/32091 ,  H01L21/67069 ,  Y02P90/22

摘要： In a plasma processing method for monitoring data, first and second measurement data are obtained; and a first and a second model are formulated based on the first and the second measurement data. Further, third measurement data is obtained; and weight factors are obtained by setting the third measurement data as weighted measurement data wherein the weighted measurement data is obtained by multiplying each of the first and the second measurement data by one of the weight factors to produce first and second weighted data and summing the thus produced first and the second weighted data. Therefore, a third model is formulated by multiplying each of the first and the second model by one of the weight factors to produce first and second weighted models, and summing the thus produced first and the second weighted models.

摘要翻译： 在用于监视数据的等离子体处理方法中，获得第一和第二测量数据; 并且基于第一和第二测量数据来制定第一和第二模型。 此外，获得第三测量数据; 并且通过将第三测量数据设置为加权测量数据来获得加权因子，其中通过将第一和第二测量数据中的每一个乘以权重因子之一来获得加权测量数据，以产生第一和第二加权数据，并因此相加 产生第一和第二加权数据。 因此，通过将第一模型和第二模型中的每一个乘以权重因子之一来产生第一和第二加权模型并对由此产生的第一和第二加权模型进行求和来形成第三模型。

公开(公告)号：US07172675B2

公开(公告)日：2007-02-06

申请号：US10742779

申请日：2003-12-23

申请人： Masayuki Tomoyasu

发明人： Masayuki Tomoyasu

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67253 ,  H01J37/32458 ,  H01J37/3266 ,  H01J37/32935 ,  H01L21/67069

摘要： An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processing room and a magnetic pole pair having two different magnetic poles disposed opposite each other with the hole interposed therebetween. The magnetic pole pair is configured to have a sufficient magnetic field strength to prevent electrons which form a plasma in the processing room from reaching the transparent member through the hole.

摘要翻译： 气密地安装在等离子体处理装置的处理室的壁上的观察窗包括具有通向与处理室相对的开口的通孔的主体，安装在与处理室相对的一侧的透明构件和磁 具有彼此相对设置的两个不同磁极的极对，其间插入孔。 磁极对被配置为具有足够的磁场强度，以防止在处理室中形成等离子体的电子通过孔到达透明构件。

公开(公告)号：US20060184264A1

公开(公告)日：2006-08-17

申请号：US11058321

申请日：2005-02-16

申请人： James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

发明人： James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

IPC分类号： G06F19/00

CPC分类号： G05B19/4184 ,  G05B2219/31356 ,  G05B2219/32179 ,  G05B2219/45031 ,  Y02P80/40 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

摘要： A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.