- 专利标题: Dielectric films for narrow gap-fill applications
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申请号: US10188433申请日: 2002-07-03
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公开(公告)号: US06653718B2公开(公告)日: 2003-11-25
- 发明人: Roger Leung , Denis Endisch , Songyuan Xie , Nigel Hacker , Yanpei Deng
- 申请人: Roger Leung , Denis Endisch , Songyuan Xie , Nigel Hacker , Yanpei Deng
- 主分类号: H01L2358
- IPC分类号: H01L2358
摘要:
A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.
公开/授权文献
- US20030087485A1 Dielectric films for narrow gap-fill applications 公开/授权日:2003-05-08
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