Invention Grant
US06656271B2 Method of manufacturing semiconductor wafer method of using and utilizing the same 失效
使用和利用半导体晶片方法的方法

Method of manufacturing semiconductor wafer method of using and utilizing the same
Abstract:
A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members.
Information query
Patent Agency Ranking
0/0