Invention Grant
- Patent Title: Method of manufacturing semiconductor wafer method of using and utilizing the same
- Patent Title (中): 使用和利用半导体晶片方法的方法
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Application No.: US09453539Application Date: 1999-12-03
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Publication No.: US06656271B2Publication Date: 2003-12-02
- Inventor: Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
- Applicant: Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
- Priority: JP10-346116 19981204; JP11-084649 19990326; JP11-334544 19991125
- Main IPC: C30B2518
- IPC: C30B2518

Abstract:
A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members.
Public/Granted literature
- US20030159644A1 METHOD OF MANUFACTURING SEMICONDUCTOR WAFER METHOD OF USING AND UTILIZING THE SAME Public/Granted day:2003-08-28
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