DEW FORMATION TESTING DEVICE AND DEW FORMATION TESTING METHOD
    1.
    发明申请
    DEW FORMATION TESTING DEVICE AND DEW FORMATION TESTING METHOD 有权
    DEW形成测试装置和DEW形成测试方法

    公开(公告)号:US20120055273A1

    公开(公告)日:2012-03-08

    申请号:US13266475

    申请日:2010-04-05

    IPC分类号: G01N19/00

    CPC分类号: G01N17/00 G01N25/68

    摘要: A dew formation testing device has an adjustment tank capable of adjusting the temperature and humidity of air to predetermined temperature and humidity, a testing tank installed separately from the adjustment tank and having a sample base that has a mounting surface, onto which a testing sample W can be placed, and that is capable to cool the mounting surface, and ducts that link the adjustment unit and the testing tank. The testing tank is provided with an air guide member that, when air flowing into the testing tank through the duct flows onto the sample base from a side of the sample base, guides the air in the direction tilted downward at a predetermined angle, the guidance being performed at a position right above the sample base at an end thereof which is on the upstream side of the air flow.

    摘要翻译: 露水测试装置具有能够将空气的温度和湿度调节到预定温度和湿度的调节罐,与调节罐分开安装并具有安装表面的样品基底的测试罐,测试样品W 可以放置,并且能够冷却安装表面,以及连接调节单元和测试槽的管道。 试验箱设置有空气引导构件,当通过导管流入试验箱的空气从试样基体的一侧流入样品基底时,以向预定角度向下倾斜的方向引导空气,引导 在位于空气流的上游侧的端部的样品基底的正上方的位置进行。

    Film Forming Apparatus
    2.
    发明申请
    Film Forming Apparatus 有权
    成膜装置

    公开(公告)号:US20080164147A1

    公开(公告)日:2008-07-10

    申请号:US11661084

    申请日:2005-08-29

    IPC分类号: C23C14/34

    摘要: There is provided a film forming apparatus which is capable of forming a film on both surfaces of a substrate by sputtering continuously with high efficiency by restraining a rise in temperature of the substrate to a predetermined value or higher.In a film forming chamber 2 the pressure of which is controlled, while a rotating drum 7 is rotated by the driving of a drive motor 8, a film is formed on the top surface of a substrate 12 on a substrate tray 13 held on a substrate holder 10 by cathodes 17a and 17b for outer surface to which a d.c. voltage or an a.c. voltage or a high-frequency voltage is applied, and also a film is formed on the back surface of the substrate 12 on the substrate tray 13 held on the substrate holder 10 by cathodes 14a and 14b for inner surface to which a d.c. voltage or an a.c. voltage or a high-frequency voltage is applied, by which a high-quality film is formed on both surfaces of the substrate 12 by sputtering continuously with high efficiency by restraining a rise in temperature of the substrate to a predetermined value or higher.

    摘要翻译: 提供一种成膜装置,其能够通过将衬底的温度上升抑制到预定值以上而以高效率连续溅射在衬底的两个表面上形成膜。 在通过驱动电动机8的驱动使旋转鼓7旋转的同时控制压力的成膜室2中,在保持在基板上的基板托盘13上的基板12的顶面上形成有膜 通过用于外部表面的阴极17a和17b固定在支架10上 电压或电流 施加电压或高频电压,并且还通过用于内部表面的阴极14a和14b在保持在衬底保持器10上的衬底托盘13上的衬底12的背面上形成膜。 电压或电流 施加电压或高频电压,通过将基板的温度上升抑制到规定值以上,通过高效率地连续溅射,在基板12的两面形成高质量的膜。

    Thin film transistor and method of fabricating the same
    7.
    发明授权
    Thin film transistor and method of fabricating the same 失效
    薄膜晶体管及其制造方法

    公开(公告)号:US07015507B2

    公开(公告)日:2006-03-21

    申请号:US10855370

    申请日:2004-05-28

    IPC分类号: H01L29/04

    摘要: Provided is a non-single-crystal germanium thin film transistor having a gate insulating film capable of reducing the interface state density between an active layer and the gate insulating film. This thin film transistor has an active layer made of a non-single-crystal germanium film, and a gate oxide film substantially made of zirconium oxide or hafnium oxide.

    摘要翻译: 提供了具有能够降低有源层和栅极绝缘膜之间的界面态密度的栅极绝缘膜的非单晶锗薄膜晶体管。 该薄膜晶体管具有由非单晶锗膜构成的有源层和基本上由氧化锆或氧化铪构成的栅极氧化膜。

    Photoelectric conversion device
    9.
    发明授权
    Photoelectric conversion device 失效
    光电转换装置

    公开(公告)号:US5138467A

    公开(公告)日:1992-08-11

    申请号:US486211

    申请日:1990-02-28

    IPC分类号: H04N1/028 H01L27/146

    CPC分类号: H01L27/14665 H04N3/1581

    摘要: A photoelectric conversion device comprises a plurality of blocks each having a plurality of sensor elements each consisting of a combination of a photoelectric conversion section, a charge storage section connected to the photoelectric conversion section, and a switch section arranged in a path for reading a charge from said charge storage section. Gate lines for operating a plurality of switch sections in a given block are commonly connected. Read lines from said switch sections are commonly connected in units of sensor elements corresponding to each block to constitute a wiring matrix. The gate lines are arranged between the adjacent common read lines of the wiring matrix.

    摘要翻译: 光电转换装置包括多个块,每个块具有多个传感器元件,每个传感器元件由光电转换部分,连接到光电转换部分的电荷存储部分和布置在用于读取电荷的路径中的开关部分组成 从所述电荷存储部分。 用于操作给定块中的多个开关部分的栅极线通常连接。 来自所述开关部分的读取线通常以对应于每个块的传感器元件为单位连接以构成布线矩阵。 栅极线布置在布线矩阵的相邻公共读取线之间。

    Semiconductor photoelectric device having a matrix wiring section
    10.
    发明授权
    Semiconductor photoelectric device having a matrix wiring section 失效
    具有矩阵接线部分的半导体光电器件

    公开(公告)号:US5061979A

    公开(公告)日:1991-10-29

    申请号:US482834

    申请日:1990-02-21

    IPC分类号: H01L27/146 H04N1/193

    CPC分类号: H04N1/1931 H01L27/14665

    摘要: A semiconductor device wherein m.times.n switch means connected to m.times.n functional elements for transferring signals by switching, and a matrix wiring section having wiring connected respectively to said m.times.n switching means are formed on a common substrate, and wherein said matrix wiring section comprises a lamination structure formed by stacking, at least, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a semiconductor layer, and a third conductive layer in this order.

    摘要翻译: 一种半导体器件,其中mxn开关装置连接到用于通过切换传送信号的功能元件,以及具有分别连接到所述mxn开关装置的布线的矩阵布线部分形成在公共基板上,并且其中所述矩阵布线部分包括形成的层叠结构 通过至少堆叠第一导电层,第一绝缘层,第二导电层,第二绝缘层,半导体层和第三导电层。