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1.发明授权公开(公告)号：US06656271B2
公开(公告)日：2003-12-02
申请号：US09453539
申请日：1999-12-03
IPC分类号： C30B2518
CPC分类号： H01L21/76251 , H01L21/76259 , Y10S117/913
摘要： A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members.
摘要翻译： 一种半导体晶片的制造方法，其具有优异的批量生产和再现性的适用性。 该方法包括以下步骤：在半导体衬底上制备具有单晶半导体层的第一构件，其间分隔层以半导体晶片为原料，将单晶半导体层转移到第二构件上，该第二构件包括半导体晶片 通过分离层分离单晶半导体层，并且在转印步骤之后使半导体衬底的表面平滑，以便用作除了形成第一和第二构件之外的目的的半导体晶片。
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公开(公告)号：US06468923B1
公开(公告)日：2002-10-22
申请号：US09534340
申请日：2000-03-24
IPC分类号： H01L2131
CPC分类号： H01L21/0203 , C25D11/32 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H01L21/76254 , H01L21/76259
摘要： A method of producing a semiconductor member comprises a first step of preparing a first member having a non-porous layer on a semiconductor substrate, and a second step of transferring the non-porous layer from the first member onto a second member, wherein use of the semiconductor substrate from which the non-porous layer is separated in the second step as a constituent material of the first member in the first step is conducted (n−1) times (“n” is a natural number not less than 2), the first and second steps are repeated n times, the semiconductor substrate is separated in n-th use in the second step and the separated semiconductor substrate is used for an use other than that of the first and second steps.
摘要翻译： 制造半导体构件的方法包括：在半导体衬底上制备具有无孔层的第一构件的第一步骤和将第一构件的无孔层转移到第二构件上的第二步骤，其中使用 进行第一步骤中作为第一部件的构成材料的第二步骤中的无孔层从其分离的半导体衬底（n-1）次（“n”是不小于2的自然数）， 第一步骤和第二步骤重复n次，在第二步骤中第n次使用半导体衬底被分离，并且分离的半导体衬底用于除了第一和第二步骤之外的用途。
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3.发明授权公开(公告)号：US07399693B2
公开(公告)日：2008-07-15
申请号：US10566170
申请日：2005-06-15
IPC分类号： H01L21/44
CPC分类号： H01L21/76251 , H01L21/0237 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/0262 , H01L33/0079 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (Ia) formed in the semiconductor film forming step.
摘要翻译： 本发明提供一种使用新的分离技术及其应用的半导体膜制造方法。 本发明的半导体膜制造方法包括形成在种子基板（1）上异质生长分离层（2）的步骤的分离层，在分离时形成半导体膜（3）的半导体膜形成步骤 层（2）和通过使用分离层（2）将半导体膜（3）从形成在半导体膜形成步骤中的复合构件（Ia）分离的分离步骤。
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4.发明申请公开(公告)号：US20060246688A1
公开(公告)日：2006-11-02
申请号：US10566170
申请日：2005-06-15
CPC分类号： H01L21/76251 , H01L21/0237 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/0262 , H01L33/0079 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (Ia) formed in the semiconductor film forming step.
摘要翻译： 本发明提供一种使用新的分离技术及其应用的半导体膜制造方法。 本发明的半导体膜制造方法包括形成在种子基板（1）上异质生长分离层（2）的步骤的分离层，在分离时形成半导体膜（3）的半导体膜形成步骤 层（2）和通过使用分离层（2）将半导体膜（3）从形成在半导体膜形成步骤中的复合构件（Ia）分离的分离步骤。
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公开(公告)号：US07015507B2
公开(公告)日：2006-03-21
申请号：US10855370
申请日：2004-05-28
申请人： Takao Yonehara , Tetsuya Shimada
发明人： Takao Yonehara , Tetsuya Shimada
IPC分类号： H01L29/04
CPC分类号： H01L29/66742 , H01L29/4908 , H01L29/78684
摘要： Provided is a non-single-crystal germanium thin film transistor having a gate insulating film capable of reducing the interface state density between an active layer and the gate insulating film. This thin film transistor has an active layer made of a non-single-crystal germanium film, and a gate oxide film substantially made of zirconium oxide or hafnium oxide.
摘要翻译： 提供了具有能够降低有源层和栅极绝缘膜之间的界面态密度的栅极绝缘膜的非单晶锗薄膜晶体管。 该薄膜晶体管具有由非单晶锗膜构成的有源层和基本上由氧化锆或氧化铪构成的栅极氧化膜。
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公开(公告)号：US07498830B2
公开(公告)日：2009-03-03
申请号：US11195004
申请日：2005-08-01
CPC分类号： G05D23/1919 , H01L2924/0002 , H01L2924/00
摘要： The burn-in apparatus includes a water supply system and a sprayer and has a structure such that water is converted into mist and sprayed onto the upper surface of a device attached to a socket of a burn-in board. The amount of heat generated by the device that generates high heat is removed by the amount of heat that includes a large latent heat from when the mist falls on the upper surface and is evaporated. Burn-in of the device is conducted while it is being cooled to the target temperature.
摘要翻译： 该老化装置包括供水系统和喷雾器，并且具有将水转化成雾并喷洒在附着于老化板插座的装置的上表面上的结构。 产生高热量的装置产生的热量通过从雾落在上表面上而蒸发的包括大的潜热的热量除去。 在冷却到目标温度的同时进行设备的老化。
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公开(公告)号：US07220213B2
公开(公告)日：2007-05-22
申请号：US11055990
申请日：2005-02-14
IPC分类号： F16H59/74
CPC分类号： F02D41/022 , B60W10/02 , B60W10/06 , B60W10/11 , B60W30/19 , B60W2710/0616 , F02D31/002 , F02D41/023 , F02D41/123 , Y10T477/639 , Y10T477/669 , Y10T477/79
摘要： A vehicle control apparatus is configured to avoid a forward lunging of a vehicle during a downshift while decelerating. The vehicle control apparatus has a clutch element that operatively coupled to an output of an engine to perform a gear shift operation and a controller that controls engine speed during shifts. If deceleration fuel cutoff conditions are met immediately after engine speed control accompanying a gear shift, delaying the start of fuel cutoff is prohibited and fuel cutoff is started right away whenever the deceleration operating conditions immediately prior to the start of engine speed control have been sustained for at least a specific length of time. On the other hand, if the deceleration duration is less than the specified time, the start of fuel cutoff is delayed so as to avoid catalyst overheating.
摘要翻译： 车辆控制装置被配置为在减速期间避免在降档期间车辆的正向着车。 车辆控制装置具有可操作地联接到发动机的输出以执行换挡操作的离合器元件和在换档期间控制发动机转速的控制器。 如果伴随变速的发动机转速控制后立即满足减速燃料切断条件，则在紧接着发动机转速控制开始之前的减速运行条件已被维持的情况下，禁止延迟燃料切断的开始并立即开始燃油切断 至少要具体一段时间。 另一方面，如果减速持续时间小于指定时间，燃料切断开始被延迟，以避免催化剂过热。
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公开(公告)号：US6132800A
公开(公告)日：2000-10-17
申请号：US804406
申请日：1997-02-21
IPC分类号： G02B5/20 , G02B6/44 , G02F1/1335 , G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786 , B05D5/06
CPC分类号： G02B6/4494 , G02F1/133516
摘要： Disclosed herein is a process for producing a color liquid crystal display device, which comprises the steps of forming a plurality of switching elements on a first transparent substrate; providing a coating layer on the plural switching elements; separately applying curable inks to predetermined opening areas between the switching elements by an ink-jet system to form a color filter; forming a transparent electrode on the color filter; forming a transparent electrode on a second transparent substrate; and charging a liquid crystal into a space between the first and second transparent substrates.
摘要翻译： 本发明公开了一种制造彩色液晶显示装置的方法，包括在第一透明基板上形成多个开关元件的步骤; 在所述多个开关元件上设置涂层; 通过喷墨系统将可固化油墨分别施加到开关元件之间的预定开口区域以形成滤色器; 在滤色器上形成透明电极; 在第二透明基板上形成透明电极; 并将液晶装入第一和第二透明基板之间的空间。
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公开(公告)号：US5843370A
公开(公告)日：1998-12-01
申请号：US945616
申请日：1997-10-29
摘要： A ferritic stainless steel consisting essentially of, in terms of weight %, not greater than 0.005% of C, not greater than 0.008% of N with the proviso that the sum of C and N is not greater than 0.009%, not greater than 0.45% of Si, not greater than 1% of Mn, 10 to 12.5% of Cr, 0.05 to 0.3% of Nb, 8.times.(C+N) to 0.3% of Ti, and the balance consisting of Fe and unavoidable impurities is produced. A ferritic stainless steel for use in exhaust system equipment for cars, which can be produced at a low finish annealing temperature and is excellent in both formability at an ordinary temperature and in high temperature strength, can be provided.
摘要翻译： PCT No.PCT / JP97 / 00786 Sec。 371日期1997年10月29日第 102（e）1997年10月29日PCT PCT 1997年3月12日PCT公布。 公开号WO97 / 34020 日期1997年9月18日一种铁素体不锈钢基本上由以重量％计不大于0.005％C，不大于0.008％N，条件是C和N之和不大于0.009％ ，不大于0.45％的Si，不大于1％的Mn，10至12.5％的Cr，0.05至0.3％的Nb，8x（C + N）至0.3％的Ti，余量由Fe和 产生不可避免的杂质。 可以提供一种用于汽车排气系统设备的铁素体不锈钢，其可以在低成品退火温度下制造并且在常温和高温强度下的成型性均优异。
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10.发明授权Photoelectric converting device having matrix wiring and read-out of parallel signals as a serial signal 失效具有矩阵布线和并行信号读出作为串行信号的光电转换装置
公开(公告)号：US5335094A
公开(公告)日：1994-08-02
申请号：US26107
申请日：1993-03-01
申请人： Noriyuki Kaifu , Toshihiro Saika , Tadao Endo , Tetsuya Shimada
发明人： Noriyuki Kaifu , Toshihiro Saika , Tadao Endo , Tetsuya Shimada
CPC分类号： H04N1/1931 , H04N3/1581 , H04N5/335
摘要： To eliminate non-read time in a photoelectric converting device, a photoelectric converting section is provided in which a plurality of photoelectric conversion elements, switching elements, matrix signal wirings, and gate drive wirings are arranged on the same substrate such that the photoelectric converting section generates parallel signals. A drive switching section is provided for applying drive signals to the gate drive wirings. A read switching section is provided for converting the parallel signals which are transferred from the matrix signal wirings into a serial signal, and for outputting the serial signal. The read switching section comprises a plurality of transfer switches respectively connected to the matrix signal wirings. The transfer switches are preferably activated together, simultaneously. A plurality of read capacitors are also provided in the read switching section to store the charges transferred through the matrix signal wirings. The read switching section also includes a plurality of read switches for reading out carriers stored in the plurality of read capacitors. The read switching section also includes reading circuitry for reading the read switches by sequentially switching the read switches so that a period of driving the transfer switches and a period of driving a first one of the read switches are partially overlapped.
摘要翻译： 为了消除光电转换装置中的非读取时间，提供了一种光电转换部，其中多个光电转换元件，开关元件，矩阵信号布线和栅极驱动布线布置在同一基板上，使得光电转换部 产生并行信号。 提供驱动切换部分，用于将驱动信号施加到栅极驱动配线。 提供读取切换部分，用于将从矩阵信号布线传送的并行信号转换成串行信号，并输出串行信号。 读取切换部分包括分别连接到矩阵信号布线的多个传送开关。 转移开关优选同时一起激活。 在读取切换部分中还提供多个读取电容器，以存储通过矩阵信号布线传输的电荷。 读取切换部分还包括用于读出存储在多个读取电容器中的载波的多个读取开关。 读取切换部分还包括读取电路，用于通过顺序地切换读取开关来读取读取开关，使得驱动转换开关的周期和驱动第一个读取开关的周期部分重叠。
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