发明授权
- 专利标题: Staged aluminum deposition process for filling vias
- 专利标题(中): 分阶段铝沉积工艺用于填充过孔
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申请号: US10038199申请日: 2001-12-21
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公开(公告)号: US06660135B2公开(公告)日: 2003-12-09
- 发明人: Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
- 申请人: Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
- 主分类号: C25C1434
- IPC分类号: C25C1434
摘要:
A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.
公开/授权文献
- US20020064952A1 Staged aluminum deposition process for filling vias 公开/授权日:2002-05-30