公开(公告)号：US06352620B2

公开(公告)日：2002-03-05

申请号：US09340977

申请日：1999-06-28

申请人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

发明人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

IPC分类号： C23L1434

CPC分类号： H01L21/76882

摘要： The present invention is a semiconductor metallization process for providing complete via fill on a substrate and a planar metal surface, wherein the vias are free of voids and the metal surface is free of grooves. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A PVD metal layer, such as PVD Al or PVD Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr to provide a conformal PVD metal layer. Then the vias or contacts are filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably carried out in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by a long throw distance of at least 100 mm, and a hot metal PVD chamber that also serves as a reflow chamber.

摘要翻译： 本发明是用于在基板和平面金属表面上提供完整的通孔填充的半导体金属化工艺，其中通孔没有空隙，并且金属表面没有凹槽。 在本发明的一个方面中，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后将PVD金属层（例如PVD Al或PVD Cu）以低于约1毫乇的压力沉积在耐火层上，以提供保形PVD金属层。 然后，通孔或触点填充金属，例如通过在保形PVD金属层上物理气相沉积沉积的附加金属回流。 该方法优选在包括长投影PVD室的集成处理系统中进行，其中靶和衬底以至少100mm的长距离距离分开，以及也用作回流的热金属PVD室 房间。

公开(公告)号：US06660135B2

公开(公告)日：2003-12-09

申请号：US10038199

申请日：2001-12-21

申请人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

发明人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

IPC分类号： C25C1434

CPC分类号： H01L21/76882

摘要： A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.

摘要翻译： 一种半导体金属化工艺，用于在没有空隙的基板上提供完整的通孔填充，以及没有凹槽的平面金属表面。 在一个方面，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后将保形PVD金属层（例如Al或Cu）以低于约1毫托的压力沉积到耐火层上。 然后，通孔和/或触点用金属填充，例如通过将通过物理气相沉积沉积的附加金属回流到共形PVD金属层上。 该方法优选在包括长抛PVD室的集成处理系统中进行，其中靶和基板被分开至少100mm，以及也用作回流室的热金属PVD室。

公开(公告)号：US06368880B2

公开(公告)日：2002-04-09

申请号：US09784709

申请日：2001-02-14

申请人： Shri Singhvi ,  Suraj Rengarajan ,  Peijun Ding ,  Gongda Yao

发明人： Shri Singhvi ,  Suraj Rengarajan ,  Peijun Ding ,  Gongda Yao

IPC分类号： H01L2100

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76877

摘要： The present invention provides an effective barrier layer for improved via fill in high aspect ratio sub-micron apertures at low temperature, particularly at the contact level on a substrate. In one aspect of the invention, a feature is filled by first depositing a barrier layer onto a substrate having high aspect ratio contacts or vias formed thereon. The barrier layer is preferably comprised of Ta, TaNx, W, WNx, or combinations thereof. A CVD conformal metal layer is then deposited over the barrier layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal layer is deposited onto the previously formed CVD conformal metal layer at a temperature below that of the melting point temperature of the metal to allow flow of the CVD conformal layer and the PVD metal layer into the vias.

摘要翻译： 本发明提供了一种有效的阻挡层，用于在低温下，特别是在衬底上的接触电平下，改进通孔填充高纵横比亚微米孔径。 在本发明的一个方面中，通过首先将阻挡层沉积到具有形成在其上的高纵横比触点或通孔的衬底上来填充特征。 阻挡层优选由Ta，TaNx，W，WNx或其组合构成。 然后在低温下将CVD保形金属层沉积在阻挡层上，以提供用于PVD金属的保形润湿层。 接下来，将PVD金属层沉积在预先形成的CVD保形金属层上，温度低于金属熔点温度的温度，以允许CVD保形层和PVD金属层流入通孔。

公开(公告)号：US06207558B1

公开(公告)日：2001-03-27

申请号：US09425082

申请日：1999-10-21

申请人： Shri Singhvi ,  Suraj Rengarajan ,  Peijun Ding ,  Gongda Yao

发明人： Shri Singhvi ,  Suraj Rengarajan ,  Peijun Ding ,  Gongda Yao

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76877

摘要： The present invention provides an effective barrier layer for improved via fill in high aspect ratio sub-micron apertures at low temperature, particularly at the contact level on a substrate. In one aspect of the invention, a feature is filled by first depositing a barrier layer onto a substrate having high aspect ratio contacts or vias formed thereon. The barrier layer is preferably comprised of Ta, TaNx, W, WNx, or combinations thereof. A CVD conformal metal layer is then deposited over the barrier layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal layer is deposited onto the previously formed CVD conformal metal layer at a temperature below that of the melting point temperature of the metal to allow flow of the CVD conformal layer and the PVD metal layer into the vias.

摘要翻译： 本发明提供了一种有效的阻挡层，用于在低温下，特别是在衬底上的接触电平下，改进通孔填充高纵横比亚微米孔径。 在本发明的一个方面中，通过首先将阻挡层沉积到具有形成在其上的高纵横比触点或通孔的衬底上来填充特征。 阻挡层优选由Ta，TaNx，W，WNx或其组合构成。 然后在低温下将CVD保形金属层沉积在阻挡层上，以提供用于PVD金属的保形润湿层。 接下来，将PVD金属层沉积在预先形成的CVD保形金属层上，温度低于金属熔点温度的温度，以允许CVD保形层和PVD金属层流入通孔。