公开(公告)号：US06660135B2

公开(公告)日：2003-12-09

申请号：US10038199

申请日：2001-12-21

申请人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

发明人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

IPC分类号： C25C1434

CPC分类号： H01L21/76882

摘要： A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.

摘要翻译： 一种半导体金属化工艺，用于在没有空隙的基板上提供完整的通孔填充，以及没有凹槽的平面金属表面。 在一个方面，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后将保形PVD金属层（例如Al或Cu）以低于约1毫托的压力沉积到耐火层上。 然后，通孔和/或触点用金属填充，例如通过将通过物理气相沉积沉积的附加金属回流到共形PVD金属层上。 该方法优选在包括长抛PVD室的集成处理系统中进行，其中靶和基板被分开至少100mm，以及也用作回流室的热金属PVD室。

公开(公告)号：US06352620B2

公开(公告)日：2002-03-05

申请号：US09340977

申请日：1999-06-28

申请人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

发明人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

IPC分类号： C23L1434

CPC分类号： H01L21/76882

摘要： The present invention is a semiconductor metallization process for providing complete via fill on a substrate and a planar metal surface, wherein the vias are free of voids and the metal surface is free of grooves. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A PVD metal layer, such as PVD Al or PVD Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr to provide a conformal PVD metal layer. Then the vias or contacts are filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably carried out in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by a long throw distance of at least 100 mm, and a hot metal PVD chamber that also serves as a reflow chamber.

摘要翻译： 本发明是用于在基板和平面金属表面上提供完整的通孔填充的半导体金属化工艺，其中通孔没有空隙，并且金属表面没有凹槽。 在本发明的一个方面中，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后将PVD金属层（例如PVD Al或PVD Cu）以低于约1毫乇的压力沉积在耐火层上，以提供保形PVD金属层。 然后，通孔或触点填充金属，例如通过在保形PVD金属层上物理气相沉积沉积的附加金属回流。 该方法优选在包括长投影PVD室的集成处理系统中进行，其中靶和衬底以至少100mm的长距离距离分开，以及也用作回流的热金属PVD室 房间。

公开(公告)号：US20080268636A1

公开(公告)日：2008-10-30

申请号：US12171132

申请日：2008-07-10

申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  C23C14/566 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76876

摘要： Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

摘要翻译： 本文所述的实施例提供了一种在衬底上沉积阻挡层和钨材料的方法。 在一个实施例中，提供了一种用于沉积材料的方法，其包括在衬底上形成阻挡层，其中所述阻挡层包含钴硅化物层和金属钴层，将阻挡层暴露于含有还原气体的浸渍气体 浸泡工艺，并在阻挡层上形成钨材料。 在一个示例中，阻挡层可以通过在基底的电介质表面上沉积含钴材料并使基底退火以从含钴材料的下部和金属钴层形成钴硅化物层而形成， 含钴材料的上部。

公开(公告)号：US07416979B2

公开(公告)日：2008-08-26

申请号：US11456073

申请日：2006-07-06

申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

IPC分类号： H01L21/00

CPC分类号： H01L21/76846 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864

摘要： Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.

摘要翻译： 提供了一种在衬底上沉积阻挡层和钨材料的方法的实施例。 在一个实施例中，一种方法提供在衬底上形成阻挡层并将衬底暴露于硅烷气体，以在浸泡过程期间在阻挡层上形成薄的含硅层。 该方法还进一步在原子层沉积工艺期间在阻挡层和薄的含硅层上沉积钨成核层，并在化学气相沉积工艺期间在钨成核层上沉积钨体层。 在一些示例中，阻挡层包含金属钴和钴硅化物，或金属镍和镍硅化物。 在其它实例中，阻挡层包含金属钛和氮化钛，或金属钽和氮化钽。

公开(公告)号：US06740585B2

公开(公告)日：2004-05-25

申请号：US10044412

申请日：2002-01-09

申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

IPC分类号： H01L2141

CPC分类号： H01L21/76843 ,  C23C14/566 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76876

摘要： Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.

摘要翻译： 提供了用于形成金属或金属硅化物阻挡层的方法和装置。 一方面，提供了一种处理衬底的方法，包括将其上设置有硅材料的衬底定位在衬底处理系统中，在第一处理室中在衬底表面上沉积第一金属层，通过使 硅材料和第一金属层，并且在第二处理室中在基底上原位沉积第二金属层。 另一方面，该方法在包括负载锁定室的设备中进行，中间衬底传送区域包括第一衬底传送室和第二衬底传送室，耦合到第一衬底传送室的物理气相沉积处理室，以及 耦合到第二衬底传送室的化学气相沉积室。

公开(公告)号：US07611990B2

公开(公告)日：2009-11-03

申请号：US12171132

申请日：2008-07-10

申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

IPC分类号： H01L21/00

CPC分类号： H01L21/76843 ,  C23C14/566 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76876

摘要： Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

摘要翻译： 本文所述的实施例提供了一种在衬底上沉积阻挡层和钨材料的方法。 在一个实施例中，提供了一种用于沉积材料的方法，其包括在衬底上形成阻挡层，其中所述阻挡层包含钴硅化物层和金属钴层，将阻挡层暴露于含有还原气体的浸渍气体 浸泡工艺，并在阻挡层上形成钨材料。 在一个示例中，阻挡层可以通过在基底的电介质表面上沉积含钴材料并使基底退火以从含钴材料的下部和金属钴层形成钴硅化物层而形成， 含钴材料的上部。

公开(公告)号：US08207005B2

公开(公告)日：2012-06-26

申请号：US13042313

申请日：2011-03-07

申请人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Yonghwa Chris Cha ,  Tristan Holtam ,  Vinay Shah

发明人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Yonghwa Chris Cha ,  Tristan Holtam ,  Vinay Shah

IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L21/331 ,  H01L21/20 ,  H01L33/00

CPC分类号： H01L21/67034 ,  G01T1/2018 ,  H01L21/225 ,  H01L21/306 ,  H01L21/308 ,  H01L21/67727 ,  H01L21/67736 ,  H01L21/67745 ,  H01L21/6776 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.

摘要翻译： 本发明的实施例考虑使用新的方法形成高效太阳能电池，以形成太阳能电池器件的有源掺杂区域和金属接触结构。 在一个实施例中，所述方法包括沉积用于限定太阳能电池器件的有源区域和/或接触结构的边界的介电材料的步骤。 可以使用各种技术来形成太阳能电池的有源区域和金属接触结构。

公开(公告)号：US20110183458A1

公开(公告)日：2011-07-28

申请号：US13042313

申请日：2011-03-07

申请人： Timothy W. WEIDMAN ,  Rohit Mishra ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Yonghwa Chris Cha ,  Tristan Holtam ,  Vinay Shah

发明人： Timothy W. WEIDMAN ,  Rohit Mishra ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Yonghwa Chris Cha ,  Tristan Holtam ,  Vinay Shah

IPC分类号： H01L31/0236

CPC分类号： H01L21/67034 ,  G01T1/2018 ,  H01L21/225 ,  H01L21/306 ,  H01L21/308 ,  H01L21/67727 ,  H01L21/67736 ,  H01L21/67745 ,  H01L21/6776 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.

摘要翻译： 本发明的实施例考虑使用新的方法形成高效太阳能电池，以形成太阳能电池器件的有源掺杂区域和金属接触结构。 在一个实施例中，所述方法包括沉积用于限定太阳能电池器件的有源区域和/或接触结构的边界的介电材料的步骤。 可以使用各种技术来形成太阳能电池的有源区域和金属接触结构。

公开(公告)号：US08309446B2

公开(公告)日：2012-11-13

申请号：US12504216

申请日：2009-07-16

申请人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

发明人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

IPC分类号： H01L21/225 ,  H01L21/385

CPC分类号： H01L31/022425 ,  H01L21/67155 ,  H01L31/0236 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.

摘要翻译： 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 在一个实施例中，所述方法包括在衬底的背表面上形成掺杂层，加热掺杂层和衬底以使掺杂层扩散到衬底的背面，在加热掺杂之后纹理化衬底的前表面 在基板的背面上形成电介质层，从基板的多个露出区域的背面去除电介质层的一部分，在该基板的背面上沉积金属层 ，其中所述金属层与所述衬底上的所述多个暴露区域中的至少一个电连通，并且所述暴露区域中的至少一个具有从所述掺杂层提供的掺杂剂原子。

公开(公告)号：US20100015756A1

公开(公告)日：2010-01-21

申请号：US12504216

申请日：2009-07-16

申请人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

发明人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

IPC分类号： H01L21/20 ,  H01L21/28 ,  C23F1/00

CPC分类号： H01L31/022425 ,  H01L21/67155 ,  H01L31/0236 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.

摘要翻译： 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 在一个实施例中，所述方法包括在衬底的背表面上形成掺杂层，加热掺杂层和衬底以使掺杂层扩散到衬底的背面，在加热掺杂之后纹理化衬底的前表面 在基板的背面上形成电介质层，从基板的多个露出区域的背面去除电介质层的一部分，在该基板的背面上沉积金属层 ，其中所述金属层与所述衬底上的所述多个暴露区域中的至少一个电连通，并且所述暴露区域中的至少一个具有从所述掺杂层提供的掺杂剂原子。