公开(公告)号：US06692617B1

公开(公告)日：2004-02-17

申请号：US08854008

申请日：1997-05-08

申请人： Jianming Fu ,  Peijun Ding ,  Zheng Xu

发明人： Jianming Fu ,  Peijun Ding ,  Zheng Xu

IPC分类号： C25C1434

CPC分类号： H01J37/3447 ,  C23C14/3457 ,  C23C14/35 ,  H01J37/3408

摘要： A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target. The density of the plasma next to the target is also intensified by positioning an anode grid between the target and the substrate, which provides a more planar geometry. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.

摘要翻译： 用于物理气相沉积（PVD）的等离子体反应器，也称为溅射，其适于使得从目标溅射的原子物质能够自动维持等离子体而不需要诸如氩的工作气体。 特别适用于铜溅射的自持溅射（SSS）可以通过几种方式实现。 通过减小磁体的尺寸，磁控管的磁体组件的区域中的等离子体的密度增强了固定的目标功率。 为了提供更均匀的溅射，小型磁控管在目标背面以一维或二维扫描。 靠近目标的等离子体的密度也通过在靶和衬底之间设置阳极栅格来加强，这提供了更平面的几何形状。 此外，然后可以将衬底偏置以更有效地控制入射在晶片上的溅射粒子的能量和方向性。

公开(公告)号：US06660135B2

公开(公告)日：2003-12-09

申请号：US10038199

申请日：2001-12-21

申请人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

发明人： Sang-Ho Yu ,  Yonghwa Chris Cha ,  Murali Abburi ,  Shri Singhvi ,  Fufa Chen

IPC分类号： C25C1434

CPC分类号： H01L21/76882

摘要： A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.

摘要翻译： 一种半导体金属化工艺，用于在没有空隙的基板上提供完整的通孔填充，以及没有凹槽的平面金属表面。 在一个方面，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后将保形PVD金属层（例如Al或Cu）以低于约1毫托的压力沉积到耐火层上。 然后，通孔和/或触点用金属填充，例如通过将通过物理气相沉积沉积的附加金属回流到共形PVD金属层上。 该方法优选在包括长抛PVD室的集成处理系统中进行，其中靶和基板被分开至少100mm，以及也用作回流室的热金属PVD室。

公开(公告)号：US06346183B1

公开(公告)日：2002-02-12

申请号：US09632501

申请日：2000-08-03

申请人： Amanda Baer ,  Richard Hsiao ,  Cherngye Hwang ,  Clinton David Snyder ,  Hong Xu

发明人： Amanda Baer ,  Richard Hsiao ,  Cherngye Hwang ,  Clinton David Snyder ,  Hong Xu

IPC分类号： C25C1434

CPC分类号： G11B5/3163 ,  G03F7/091 ,  G11B5/3133 ,  G11B5/3166

摘要： A fabrication method using a bottom anti-reflective coating (BARC) eliminating deleterious effects of unwanted reflected light during the photo exposure step of a photolithographic process. The BARC coating comprises a carbon coating having a thickness of 300 angstroms, deposited by a carbon ion beam deposition tool, and an initial silicon BARC coating layer having thickness of 20 angstroms deposited before the carbon coating. Where the BARC layer is utilized in a photolithographic NiFe pole tip fabrication process, a NiFe seed layer is first deposited upon a substrate. The BARC layer is then formed on the NiFe seed layer and the pole tip trench is then photolithographically created. Thereafter, the BARC layer is removed from the bottom of the trench, utilizing a reactive ion etch process, exposing the NiFe seed layer. The NiFe pole tip is then fabricated into the trench, and any remaining photoresist and BARC layer are removed.

摘要翻译： 使用底部抗反射涂层（BARC）的制造方法，其消除光刻工艺的光曝光步骤期间不期望的反射光的有害影响。 BARC涂层包括通过碳离子束沉积工具沉积的具有300埃厚度的碳涂层，以及在碳涂覆之前淀积厚度为20埃的初始硅BARC涂层。 在光刻NiFe极尖制造工艺中使用BARC层的情况下，首先将NiFe种子层沉积在衬底上。 然后在NiFe种子层上形成BARC层，然后光刻形成极尖沟槽。 此后，利用反应离子蚀刻工艺将BARC层从沟槽的底部移除，暴露出NiFe种子层。 然后将NiFe极尖制成沟槽，并且去除任何剩余的光致抗蚀剂和BARC层。