发明授权
- 专利标题: Formation of multisegmented plated through holes
- 专利标题(中): 多段电镀通孔的形成
-
申请号: US10176254申请日: 2002-06-19
-
公开(公告)号: US06700078B2公开(公告)日: 2004-03-02
- 发明人: Donald S. Farquhar , Robert M. Japp , John M. Lauffer , Konstantinos I. Papathomas
- 申请人: Donald S. Farquhar , Robert M. Japp , John M. Lauffer , Konstantinos I. Papathomas
- 主分类号: H05K116
- IPC分类号: H05K116
摘要:
A method and structure relating to multisegmented plated through holes. A substrate includes a dielectric layer sandwiched between a first laminate layer and a second laminate layer. A through hole is formed through the substrate. The through hole passes through nonplatable dielectric material within the dielectric layer. As a result, subsequent seeding and electroplating of the through hole results in a conductive metal plating forming at a wall of the through hole on a segment of the first laminate layer and on a segment of the second laminate layer, but not on the nonplatable dielectric material of the dielectric layer. Thus, the conductive metal plating is not continuous from the first laminate layer to the second laminate layer.
公开/授权文献
- US20020164468A1 Formation of multisegmented plated through holes 公开/授权日:2002-11-07
信息查询