摘要:
A method and structure relating to multisegmented plated through holes. A substrate includes a dielectric layer sandwiched between a first laminate layer and a second laminate layer. A through hole is formed through the substrate. The through hole passes through nonplatable dielectric material within the dielectric layer. As a result, subsequent seeding and electroplating of the through hole results in a conductive metal plating forming at a wall of the through hole on a segment of the first laminate layer and on a segment of the second laminate layer, but not on the nonplatable dielectric material of the dielectric layer. Thus, the conductive metal plating is not continuous from the first laminate layer to the second laminate layer.
摘要:
A method and structure relating to multisegmented plated through holes. A substrate includes a dielectric layer sandwiched between a first laminate layer and a second laminate layer. A through hole is formed through the substrate. The through hole passes through nonplatable dielectric material within the dielectric layer. As a result, subsequent seeding and electroplating of the through hole results in a conductive metal plating forming at a wall of the through hole on a segment of the first laminate layer and on a segment of the second laminate layer, but not on the nonplatable dielectric material of the dielectric layer. Thus, the conductive metal plating is not continuous from the first laminate layer to the second laminate layer.
摘要:
A method and structure relating to multisegmented plated through holes. A substrate includes a dielectric layer sandwiched between a first laminate layer and a second laminate layer. A through hole is formed through the substrate. The through hole passes through nonplatable dielectric material within the dielectric layer. As a result, subsequent seeding and electroplating of the through hole results in a conductive metal plating forming at a wall of the through hole on a segment of the first laminate layer and on a segment of the second laminate layer, but not on the nonplatable dielectric material of the dielectric layer. Thus, the conductive metal plating is not continuous from the first laminate layer to the second laminate layer.
摘要:
A method of forming a capacitive core structure and of forming a circuitized printed wiring board from the core structure and the resulting structures are provided. The capacitive core structure is formed by providing a central conducting plane of a sheet of conductive material and forming at least one clearance hole in the central conducting plane. First and second external conducting planes are laminated to opposite sides of the ground plane with a film of dielectric material between each of the first and second external planes and the central conducting plane. At least one clearance hole is formed in each of the first and second external planes. A circuitized wiring board structure can be formed by laminating a capacitive core structure between two circuitized structures. The invention also relates to the structures formed by these methods.
摘要:
A method of forming a capacitive core structure and of forming a circuitized printed wiring board from the core structure and the resulting structures are provided. The capacitive core structure is formed by providing a central conducting plane of a sheet of conductive material and forming at least one clearance hole in the central conducting plane. First and second external conducting planes are laminated to opposite sides of the ground plane with a film of dielectric material between each of the first and second external planes and the central conducting plane. At least one clearance hole is formed in each of the first and second external planes. A circuitized wiring board structure can be formed by laminating a capacitive core structure between two circuitized structures. The invention also relates to the structures formed by these methods.
摘要:
The present invention relates to a method for providing an interconnect between layers of a multilayer circuit board. A first via extending through a total thickness of a first layer is formed. The first via is totally filled with a first solid conductive plug and an end of the first solid conductive plug includes a first contact pad that is in contact with a surface of the first layer. A second via extending through a total thickness of a second layer is formed. The second via totally filling with a second solid conductive plug and an end of the second solid conductive plug includes a second contact pad that is in contact with a surface of the second layer. The second layer is electrically and mechanically coupled to the first layer by an electrically conductive adhesive that is in electrical and mechanical contact with both the end of the first plug and the end of the second plug.
摘要:
A semiconductor device having a thermoset-containing, dielectric material and methods for fabricating the same is provided. The device may take the form of a printed circuit board, an integrated circuit chip carrier, or the like. The dielectric material is a non-fibrillated, fluoropolymer matrix that has inorganic particles distributed therein and is impregnated with a thermoset material.
摘要:
A structure and method for forming a tamper respondent electronic circuit enclosure that includes an integrated circuit structure, a mesh structure surrounding the integrated circuit structure, and a sealed enclosure surrounding the mesh structure. The mesh structure includes a layer of flexible dielectric having a first side and a second side, a screen-printed pattern of flexible electrically conductive first circuit lines forming a first resistor network on the first side, and a photo lithographically-formed pattern of flexible electrically conductive second circuit lines forming a second resistor network on the second side.
摘要:
A method of forming a core for and forming a composite wiring board. The core has an electrically conductive coating on at least one face of a dielectric substrate. At least one opening is formed through the substrate extending from one face to the other and through each conductive coating. An electrically conductive material is dispensed in each of the openings extending through the conducting coating. At least a portion of the surface of the conductive coating on one face is removed to allow a nub of the conductive material to extend above the substrate face and any remaining conductive material to thereby form a core that can be electrically joined face-to-face with a second core member or other circuitized structure.
摘要:
The present invention provides a method of filling an at least one aperture in a semiconductor substrate by placing a sacrificial carrier structure on a surface of the substrate, wherein the structure comprises, a first layer, a fill material over the first layer, and a mask over fill material having at least one opening therein, such that the opening at least partially aligns with the aperture in the substrate. Thereafter, the fill material is forced into the aperture by the application of heat and pressure, and the sacrificial carrier structure is removed.