发明授权
- 专利标题： Process for removing polymers during the fabrication of semiconductor devices
- 专利标题（中）： 在制造半导体器件期间去除聚合物的方法
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申请号： US10189152申请日： 2002-07-02
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公开(公告)号： US06720271B2公开(公告)日： 2004-04-13
- 发明人: Enrico Bellandi , Francesco Pipia , Mauro Alessandri
- 申请人： Enrico Bellandi , Francesco Pipia , Mauro Alessandri
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW).