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    Phase change memory cell with self-aligned vertical heater and low resistivity interface
    1.
    发明授权
    Phase change memory cell with self-aligned vertical heater and low resistivity interface 有权

    公开(公告)号：US08981336B2

    公开(公告)日：2015-03-17

    申请号：US12496503

    申请日：2009-07-01

    申请人： Barbara Zanderighi ,  Francesco Pipia

    发明人： Barbara Zanderighi ,  Francesco Pipia

    IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L27/24

    摘要： A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.

    PHASE CHANGE MEMORY CELL WITH SELF-ALIGNED VERTICAL HEATER AND LOW RESISTIVITY INTERFACE
    3.
    发明申请
    PHASE CHANGE MEMORY CELL WITH SELF-ALIGNED VERTICAL HEATER AND LOW RESISTIVITY INTERFACE 有权
    具有自对准垂直加热器和低电阻接口的相变存储器单元

    公开(公告)号：US20110001114A1

    公开(公告)日：2011-01-06

    申请号：US12496503

    申请日：2009-07-01

    申请人： Barbara Zanderighi ,  Francesco Pipia

    发明人： Barbara Zanderighi ,  Francesco Pipia

    IPC分类号： H01L45/00 ,  H01L21/28

    CPC分类号： H01L45/126 ,  G11C13/0004 ,  G11C2013/008 ,  H01L27/2445 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

    摘要： A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.

    摘要翻译： 在自对准垂直加热器元件和选择装置的接触区域之间提供低电阻率界面材料。 相变硫族化物材料直接沉积在垂直加热元件上。 在一个实施例中，垂直加热器元件为L形，具有沿着字线方向的弯曲垂直壁和水平底座。 在一个实施例中，使用PVD技术将低电阻率界面材料沉积到具有负轮廓的沟槽中。 低电阻率界面材料的上表面可以具有锥形的鸟嘴延伸部。

    Process for removing polymers during the fabrication of semiconductor devices
    4.
    发明授权
    Process for removing polymers during the fabrication of semiconductor devices 有权
    在制造半导体器件期间去除聚合物的方法

    公开(公告)号：US06720271B2

    公开(公告)日：2004-04-13

    申请号：US10189152

    申请日：2002-07-02

    申请人： Enrico Bellandi ,  Francesco Pipia ,  Mauro Alessandri

    发明人： Enrico Bellandi ,  Francesco Pipia ,  Mauro Alessandri

    IPC分类号： H01L21302

    CPC分类号： H01L21/02071 ,  H01L21/02052 ,  H01L21/31116 ,  H01L21/76814

    摘要： The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW).

    摘要翻译： 本发明涉及用于从半导体器件表面去除蚀刻后残留物或聚合物的方法，该方法包括用氨水或氢氧化铵水溶液处理半导体器件，任选地含有臭氧足以有效去除所述后蚀刻 来自半导体器件表面的残留物或聚合物，并用臭氧化水（即，富含臭氧的水）漂洗半导体器件，其中水优选为去离子水（臭氧-DIW）。