公开(公告)号：US06720271B2

公开(公告)日：2004-04-13

申请号：US10189152

申请日：2002-07-02

申请人： Enrico Bellandi ,  Francesco Pipia ,  Mauro Alessandri

发明人： Enrico Bellandi ,  Francesco Pipia ,  Mauro Alessandri

IPC分类号： H01L21302

CPC分类号： H01L21/02071 ,  H01L21/02052 ,  H01L21/31116 ,  H01L21/76814

摘要： The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW).

摘要翻译： 本发明涉及用于从半导体器件表面去除蚀刻后残留物或聚合物的方法，该方法包括用氨水或氢氧化铵水溶液处理半导体器件，任选地含有臭氧足以有效去除所述后蚀刻 来自半导体器件表面的残留物或聚合物，并用臭氧化水（即，富含臭氧的水）漂洗半导体器件，其中水优选为去离子水（臭氧-DIW）。

公开(公告)号：US20130214417A1

公开(公告)日：2013-08-22

申请号：US13400920

申请日：2012-02-21

申请人： Carla M. Lazzari ,  Enrico Bellandi

发明人： Carla M. Lazzari ,  Enrico Bellandi

IPC分类号： H01L29/43 ,  H01L21/285

CPC分类号： H01L29/0657 ,  H01L21/28518 ,  H01L27/2445

摘要： A method of forming a metal silicide region. The method comprises forming a metal material over and in contact with exposed surfaces of a dielectric material and silicon structures protruding from the dielectric material. A capping material is formed over and in contact with the metal material. The silicon structures are exposed to heat to effectuate a multidirectional diffusion of the metal material into the silicon structures to form a first metal silicide material. The capping material and unreacted portions of the metal material are removed. The silicon structures are exposed to heat to substantially convert the first metal silicide material into a second metal silicide material. A method of semiconductor device fabrication, an array of silicon structures, and a semiconductor device structure are also described.

摘要翻译： 一种形成金属硅化物区域的方法。 该方法包括在介电材料的暴露表面和从电介质材料突出的硅结构上形成金属材料。 覆盖材料形成在金属材料上并与金属材料接触。 硅结构暴露于热量以实现金属材料进入硅结构的多向扩散以形成第一金属硅化物材料。 除去金属材料的封盖材料和未反应部分。 硅结构暴露于热量以将第一金属硅化物材料基本上转化为第二金属硅化物材料。 还描述了半导体器件制造的方法，硅结构的阵列和半导体器件结构。

公开(公告)号：US06233046B1

公开(公告)日：2001-05-15

申请号：US09343207

申请日：1999-06-29

申请人： Simone Alba ,  Claudio Savoia ,  Enrico Bellandi ,  Francesca Canali

发明人： Simone Alba ,  Claudio Savoia ,  Enrico Bellandi ,  Francesca Canali

IPC分类号： G01B1106

CPC分类号： G01B11/0641 ,  G01N21/211

摘要： The method described comprises the following steps: measuring, with a spectroscopic ellipsometer, the values of two quantities which are dependent on the thickness of the altered silicon layer and of a thin layer of silicon dioxide grown thereon with variations in the wavelength of the light of the measurement beam of the ellipsometer, obtaining from these measured values respective experimental curves representing the two quantities as functions of the wavelength, calculating the theoretical curves of the two quantities as functions of the wavelength considering the refractive indices and absorption coefficients of silicon dioxide and of the altered silicon as known parameters and the thickness of the altered silicon layer and the thickness of the thin silicon dioxide layer as unknowns, comparing the theoretical curves with the respective experimental curves in order to determine for which values of the unknowns the curves under comparison approximate to one another best, and extracting from the values determined the value which relates to the thickness of the altered silicon layer. The time required for the measurements and calculations is a few minutes.

摘要翻译： 所描述的方法包括以下步骤：用分光椭偏仪测量取决于改变的硅层的厚度和生长在其上的二氧化硅薄层的两个量的值，其中光的波长有变化 椭圆计的测量光束，从这些测量值获得表示两个量作为波长函数的各实验曲线，考虑二氧化硅的折射率和吸收系数计算两个量的函数的理论曲线，以及 改变的硅作为已知参数，并且改变的硅层的厚度和薄二氧化硅层的厚度为未知数，将理论曲线与各实验曲线进行比较，以确定未知量的哪些值比较曲线近似 彼此最好，并且提取 g的值取决于与改变的硅层的厚度有关的值。测量和计算所需的时间是几分钟。

公开(公告)号：US08692373B2

公开(公告)日：2014-04-08

申请号：US13400920

申请日：2012-02-21

申请人： Carla Maria Lazzari ,  Enrico Bellandi

发明人： Carla Maria Lazzari ,  Enrico Bellandi

IPC分类号： H01L29/43

CPC分类号： H01L29/0657 ,  H01L21/28518 ,  H01L27/2445

摘要： A method of forming a metal silicide region. The method comprises forming a metal material over and in contact with exposed surfaces of a dielectric material and silicon structures protruding from the dielectric material. A capping material is formed over and in contact with the metal material. The silicon structures are exposed to heat to effectuate a multidirectional diffusion of the metal material into the silicon structures to form a first metal silicide material. The capping material and unreacted portions of the metal material are removed. The silicon structures are exposed to heat to substantially convert the first metal silicide material into a second metal silicide material. A method of semiconductor device fabrication, an array of silicon structures, and a semiconductor device structure are also described.

摘要翻译： 一种形成金属硅化物区域的方法。 该方法包括在介电材料的暴露表面和从电介质材料突出的硅结构上形成金属材料。 覆盖材料形成在金属材料上并与金属材料接触。 硅结构暴露于热量以实现金属材料进入硅结构的多向扩散以形成第一金属硅化物材料。 除去金属材料的封盖材料和未反应部分。 硅结构暴露于热量以将第一金属硅化物材料基本上转化为第二金属硅化物材料。 还描述了半导体器件制造的方法，硅结构的阵列和半导体器件结构。