发明授权
- 专利标题： Method for processing coating film and method for manufacturing semiconductor element with use of the same method
- 专利标题（中）： 使用相同方法处理涂膜的方法和半导体元件的制造方法
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申请号： US10136744申请日： 2002-04-30
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公开(公告)号： US06746963B2公开(公告)日： 2004-06-08
- 发明人: Yasushi Fujii , Hiroyuki Iida , Isao Sato , Kazumasa Wakiya , Shigeru Yokoi
- 申请人： Yasushi Fujii , Hiroyuki Iida , Isao Sato , Kazumasa Wakiya , Shigeru Yokoi
- 优先权： JP2001-133785 20010501
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
A method for processing a coating film includes the steps of forming a silica group coating film having a low dielectric constant on a substrate, conducting an etching process to the silica group coating film through a photoresist pattern, and processing the silica group coating film with plasma induced from helium gas. With this, it is possible to prevent the silica group coating film from being damaged when a wet stripping process is conducted to remove the photoresist pattern as a subsequent process, and to maintain the low dielectric constant of the coating film.