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1.发明授权公开(公告)号：US06746963B2
公开(公告)日：2004-06-08
申请号：US10136744
申请日：2002-04-30
申请人： Yasushi Fujii , Hiroyuki Iida , Isao Sato , Kazumasa Wakiya , Shigeru Yokoi
发明人： Yasushi Fujii , Hiroyuki Iida , Isao Sato , Kazumasa Wakiya , Shigeru Yokoi
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/316 , H01L21/76802
摘要： A method for processing a coating film includes the steps of forming a silica group coating film having a low dielectric constant on a substrate, conducting an etching process to the silica group coating film through a photoresist pattern, and processing the silica group coating film with plasma induced from helium gas. With this, it is possible to prevent the silica group coating film from being damaged when a wet stripping process is conducted to remove the photoresist pattern as a subsequent process, and to maintain the low dielectric constant of the coating film.
摘要翻译： 一种涂膜的处理方法，其特征在于，在基板上形成介电常数低的二氧化硅系涂膜，通过光致抗蚀剂图案对二氧化硅基涂膜进行蚀刻处理，并对该二氧化硅基涂膜进行等离子体处理 由氦气引起。 由此，当进行湿剥离处理以除去作为后续工艺的光致抗蚀剂图案时，可以防止二氧化硅基涂膜损坏，并且保持涂膜的低介电常数。
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2.发明申请Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith 有权用于形成双镶嵌结构的工艺中使用的清洗液和用于处理基材的方法公开(公告)号：US20100248477A1
公开(公告)日：2010-09-30
申请号：US12801452
申请日：2010-06-09
申请人： Shigeru Yokoi , Kazumasa Wakiya
发明人： Shigeru Yokoi , Kazumasa Wakiya
IPC分类号： H01L21/306 , C11D3/26
CPC分类号： H01L21/31144 , C11D7/32 , C11D11/0047 , H01L21/31138 , H01L21/76807
摘要： It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water. The cleaning liquid attains in a well balanced manner such effects that a sacrifice layer used for forming a dual damascene structure is excellently removed, and a low dielectric layer is not damaged upon formation of a metallic wiring on a substrate having a metallic layer (such as a Cu layer) and the low dielectric layer formed thereon.
摘要翻译： 公开了一种用于形成双镶嵌结构的方法中使用的清洗液，包括以下步骤：蚀刻积聚在其上具有金属层的基底上的低介电层（低k层），以形成第一蚀刻空间; 在第一蚀刻空间中填充牺牲层; 部分地蚀刻低介电层和牺牲层以形成连接到第一蚀刻空间的第二蚀刻空间; 并用清洗液除去残留在第一蚀刻空间中的牺牲层，其中清洗液包含（a）1-25质量％的季铵氢氧化物，如TMAH和胆碱（b），30-70质量％ 水溶性有机溶剂，（c）20〜60质量％的水。 清洗液以良好平衡的方式达到这样的效果，即用于形成双镶嵌结构的牺牲层被极好地去除，并且在具有金属层的基底上形成金属布线时，低介电层不被损坏（例如 Cu层）和形成在其上的低电介质层。
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3.发明申请公开(公告)号：US20100056411A1
公开(公告)日：2010-03-04
申请号：US12591048
申请日：2009-11-05
IPC分类号： G03F7/42
CPC分类号： H01L21/31133 , G03F7/423
摘要： Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.
摘要翻译： 公开了一种用于光致抗蚀剂去除的处理液，其包含（a）氧化剂（例如过氧化氢水溶液），（b）选自碳酸亚烷基酯及其衍生物（例如碳酸亚丙酯）中的至少一种，和（c）水; 以及在干法蚀刻处理之后，处理液处理具有光刻胶膜劣化的基板或在干法蚀刻处理后任选进行等离子体灰化处理的基板的处理液的方法，然后用光致抗蚀剂剥离液 剥离光致抗蚀剂。
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4.发明申请Treating liquid for photoresist removal, and method for treating substrate 审中-公开处理用于光刻胶去除的液体，以及处理底物的方法公开(公告)号：US20080242575A1
公开(公告)日：2008-10-02
申请号：US12155386
申请日：2008-06-03
IPC分类号： G03F7/42
CPC分类号： H01L21/31133 , G03F7/423
摘要： Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.
摘要翻译： 公开了一种用于光致抗蚀剂去除的处理液，其包含（a）氧化剂（例如过氧化氢水溶液），（b）选自碳酸亚烷基酯及其衍生物（例如碳酸亚丙酯）中的至少一种，和（c）水; 以及在干法蚀刻处理之后，处理液处理具有光刻胶膜劣化的基板或在干法蚀刻处理后任选进行等离子体灰化处理的基板的处理液的方法，然后用光致抗蚀剂剥离液 剥离光致抗蚀剂。
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5.发明申请Photoresist stripping solution and a method of stripping photoresists using the same 审中-公开光阻剥离溶液和使用其剥离光致抗蚀剂的方法公开(公告)号：US20070004933A1
公开(公告)日：2007-01-04
申请号：US11516562
申请日：2006-09-07
申请人： Kazumasa Wakiya , Shigeru Yokoi
发明人： Kazumasa Wakiya , Shigeru Yokoi
IPC分类号： C07C305/00
CPC分类号： H01L21/02068 , C11D1/62 , C11D7/32 , C11D11/0047 , G03F7/425 , G03F7/426
摘要： A photoresist stripping solution comprising (a) a specified quaternary ammonium hydroxide, such as tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, methyltributylammonium hydroxide or methyltripropylammonium hydroxide, (b) a water-soluble amine, (c) water, (d) a corrosion inhibitor and (e) a water-soluble organic solvent, the compounding ratio of component (a) to component (b) being in the range of from 1:3 to 1:10 by mass, as well as a method of stripping photoresists using the solution. The stripping solution of the invention assures effective protection of Al, Cu and other wiring metal conductors against corroding as well as efficient stripping of the photoresist film, post-ashing residues such as modified photoresist film and metal depositions. It also assures efficient stripping of Si-based residues and effective protection of the substrate (particularly the reverse side of a Si substrate) from corroding.
摘要翻译： 一种光致抗蚀剂剥离溶液，其包含（a）特定的季铵氢氧化物，例如氢氧化四丁基铵，氢氧化四丙铵，氢氧化甲基三丁基铵或甲基三氢丙基氢氧化铵，（b）水溶性胺，（c）水，（d）腐蚀抑制剂和（ e）水溶性有机溶剂，组分（a）与组分（b）的混合比例在1:3至1:10的范围内，以及使用溶液剥离光致抗蚀剂的方法。 本发明的剥离溶液确保有效保护Al，Cu和其它布线金属导体免受腐蚀以及光致抗蚀剂膜的有效剥离，后灰化残留物如修饰的光致抗蚀剂膜和金属沉积。 它还确保有效剥离Si基残留物并有效保护基材（特别是Si基板的反面）免受腐蚀。
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6.发明授权Photoresist stripping solution and a method of stripping photoresists using the same 有权光阻剥离溶液和使用其剥离光致抗蚀剂的方法公开(公告)号：US08697345B2
公开(公告)日：2014-04-15
申请号：US12662151
申请日：2010-04-01
申请人： Kazumasa Wakiya , Shigeru Yokoi
发明人： Kazumasa Wakiya , Shigeru Yokoi
CPC分类号： H01L21/02068 , C11D1/62 , C11D7/32 , C11D11/0047 , G03F7/425 , G03F7/426
摘要： A photoresist stripping solution comprising (a) a specified quaternary ammonium hydroxide, such as tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, methyltributylammonium hydroxide or methyltripropylammonium hydroxide, (b) a water-soluble amine, (c) water, (d) a corrosion inhibitor and (e) a water-soluble organic solvent, the compounding ratio of component (a) to component (b) being in the range of from 1:3 to 1:10 by mass, as well as a method of stripping photoresists using the solution. The stripping solution of the invention assures effective protection of Al, Cu and other wiring metal conductors against corroding as well as efficient stripping of the photoresist film, post-ashing residues such as modified photoresist film and metal depositions. It also assures efficient stripping of Si-based residues and effective protection of the substrate (particularly the reverse side of a Si substrate) from corroding.
摘要翻译： 一种光致抗蚀剂剥离溶液，其包含（a）特定的季铵氢氧化物，例如氢氧化四丁基铵，氢氧化四丙铵，氢氧化甲基三丁基铵或甲基三氢丙基氢氧化铵，（b）水溶性胺，（c）水，（d）腐蚀抑制剂和（ e）水溶性有机溶剂，组分（a）与组分（b）的混合比例在1:3至1:10的范围内，以及使用溶液剥离光致抗蚀剂的方法。 本发明的剥离溶液确保有效保护Al，Cu和其它布线金属导体免受腐蚀以及光致抗蚀剂膜的有效剥离，后灰化残留物如修饰的光致抗蚀剂膜和金属沉积。 它还确保有效剥离Si基残留物并有效保护基材（特别是Si基板的反面）免受腐蚀。
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7.发明授权公开(公告)号：US08685910B2
公开(公告)日：2014-04-01
申请号：US12845085
申请日：2010-07-28
申请人： Shigeru Yokoi , Kazumasa Wakiya , Koji Saito
发明人： Shigeru Yokoi , Kazumasa Wakiya , Koji Saito
CPC分类号： C11D11/0047 , C11D1/62 , C11D7/3209 , C11D7/3281 , C11D7/34 , G03F7/425 , G03F7/426
摘要： It is disclosed a cleaning liquid for stripping and dissolving a photoresist pattern having a film thickness of 10-150 μm, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide, such as tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, (b) 65-97 mass % of a water-soluble organic solvent, such as dimethylsulfoxide or a mixed solvent thereof with N-methyl-2-pyrrolidone, sulforane, etc., and (c) 0.5-30 mass % of water, and a method for treating a substrate therewith.
摘要翻译： 公开了一种用于剥离和溶解膜厚度为10-150μm的光致抗蚀剂图案的清洗液，其含有（a）0.5-15质量％的季铵氢氧化物，例如四丙基氢氧化铵和四丁基氢氧化铵，（b） 65-97质量％的水溶性有机溶剂，例如二甲基亚砜或其与N-甲基-2-吡咯烷酮，sulforane等的混合溶剂，和（c）0.5-30质量％的水，以及 用于处理基材。
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公开(公告)号：US08354215B2
公开(公告)日：2013-01-15
申请号：US12883592
申请日：2010-09-16
CPC分类号： G03F7/425
摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.
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9.发明申请Photoresist stripping solution and a method of stripping photoresists using the same 审中-公开光阻剥离溶液和使用其剥离光致抗蚀剂的方法公开(公告)号：US20100112495A1
公开(公告)日：2010-05-06
申请号：US12654317
申请日：2009-12-17
申请人： Shigeru Yokoi , Kazumasa Wakiya
发明人： Shigeru Yokoi , Kazumasa Wakiya
CPC分类号： G03F7/422 , C11D7/265 , C11D7/3218 , C11D7/34 , C11D11/0047 , G03F7/425
摘要： A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues.
摘要翻译： 一种光致抗蚀剂剥离溶液，其包含（a）含羧基的酸性化合物，（b）至少一种选自烷醇胺和特定季铵氢氧化物的碱性化合物（例如单乙醇胺，四烷基铵），（c）含硫腐蚀 抑制剂和（d）水，并且pH值为3.5-5.5; 并公开了使用其剥离光致抗蚀剂的方法。 本发明提供一种光刻胶剥离溶液，其保护金属布线（特别是铜布线）不受腐蚀的影响，不会损害诸如低电介质层或有机SOG层的层间膜，并且显示出优异的光致抗蚀剂剥离性 和后灰化残留物。
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10.发明申请Treating liquid for photoresist removal, and method for treating substrate 审中-公开处理用于光刻胶去除的液体，以及处理底物的方法公开(公告)号：US20090176677A1
公开(公告)日：2009-07-09
申请号：US12382231
申请日：2009-03-11
IPC分类号： G03F7/42
CPC分类号： H01L21/31133 , G03F7/423
摘要： Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.
摘要翻译： 公开了一种用于光致抗蚀剂去除的处理液，其包含（a）氧化剂（例如过氧化氢水溶液），（b）选自碳酸亚烷基酯及其衍生物（例如碳酸亚丙酯）中的至少一种，和（c）水; 以及在干法蚀刻处理之后，处理液处理具有光刻胶膜劣化的基板或在干法蚀刻处理后任选进行等离子体灰化处理的基板的处理液的方法，然后用光致抗蚀剂剥离液 剥离光致抗蚀剂。
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