发明授权
- 专利标题： Epitaxial base substrate and epitaxial substrate
- 专利标题（中）： 外延基底和外延基底
-
申请号： US10042949申请日： 2002-01-09
-
公开(公告)号： US06759715B2公开(公告)日： 2004-07-06
- 发明人: Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda , Yukinori Nakamura
- 申请人： Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda , Yukinori Nakamura
- 优先权： JP2001-005944 20010115; JP2001-387772 20011220
- 主分类号： H01L2972
- IPC分类号： H01L2972
摘要：
A III nitride buffer film including at least Al element and having a screw-type dislocation density of 1×108/cm2 or less is formed on a base made from a sapphire single crystal, etc., to fabricate an epitaxial base substrate. Then, a III nitride underfilm is formed on the III nitride buffer film, to fabricate an epitaxial substrate.
公开/授权文献
- US20020093055A1 Epitaxial base substrate and epitaxial substrate 公开/授权日：2002-07-18
信息查询
