公开(公告)号：US06759715B2

公开(公告)日：2004-07-06

申请号：US10042949

申请日：2002-01-09

申请人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda ,  Yukinori Nakamura

发明人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda ,  Yukinori Nakamura

IPC分类号： H01L2972

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A III nitride buffer film including at least Al element and having a screw-type dislocation density of 1×108/cm2 or less is formed on a base made from a sapphire single crystal, etc., to fabricate an epitaxial base substrate. Then, a III nitride underfilm is formed on the III nitride buffer film, to fabricate an epitaxial substrate.

摘要翻译： 在由蓝宝石单晶等制成的基底上形成至少包含Al元素并且具有1×10 8 / cm 2以下的螺旋型位错密度的III族氮化物缓冲膜，以制造外延基底 基质。 然后，在III族氮化物缓冲膜上形成III族氮化物底膜，制造外延衬底。

公开(公告)号：US07067847B2

公开(公告)日：2006-06-27

申请号：US10017325

申请日：2001-12-14

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1−p−qN (0≦p≦1, 0≦y≦q). A GaN-based semiconductor layer group is formed on the buffer layer.

摘要翻译： 在由例如蓝宝石单晶制成的基板上形成FWHM X射线摇摆曲线值为90秒以下的Al底层。 在AlN底层上形成缓冲层，并且具有下列组成：在1-pq N（0 <= p < = 1，0 <= y <= q）。 在缓冲层上形成GaN基半导体层组。

公开(公告)号：US06649288B2

公开(公告)日：2003-11-18

申请号：US09981295

申请日：2001-10-16

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： B32B904

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16 ,  Y10T428/265

摘要： A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant “c” of the c-axis of the Group III nitride film and the lattice constant “a” of the crystal face perpendicular to the main surface of the substrate satisfies the relation of “C>2.636a-3.232”.

摘要翻译： III族氮化物膜沿着衬底的C轴直接生长在晶体衬底上，并且至少包括Al。 III族氮化物膜具有六方晶系，III族氮化物膜的c轴的晶格常数“c”和垂直于衬底的主表面的晶面的晶格常数“a”满足 “C> 2.636a-3.232”的关系。

公开(公告)号：US06815867B2

公开(公告)日：2004-11-09

申请号：US09997997

申请日：2001-11-30

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L4108

CPC分类号： H03H9/02543 ,  Y10T29/42

摘要： A base material made of C-faced sapphire single crystal is set on a susceptor installed in a reactor arranged horizontally. Then, a trimethyl-aluminum and an ammonia are introduced as raw material gases into the reactor and supplied onto the substrate, to form an AlN film. In this case, the temperature of the base material is set to 1100° C. or over, and the ratio (V raw material gas/III raw material gas) is set to 800 or below, and the forming pressure is set within a range of 7-17 Torr. As a result, the crystallinity of the AlN film is developed to 90 arcsec or below in FWHM of X-ray rocking curve, and the surface flatness of the AlN film is developed to 20 Å or below. Therefore, a substrate composed of the base material and the AlN film is preferably usable for an acoustic surface wave device, and if the substrate is employed, the deviation from the theoretical propagation velocity is set to 1.5 m/sec or below.

摘要翻译： 将由C面蓝宝石单晶构成的基材设置在安装在水平排列的反应器中的基座上。 然后，将三甲基铝和氨作为原料气体引入反应器中并供给到基板上，形成AlN膜。 在这种情况下，将基材的温度设定为1100℃以上，将原料气体/ III原料气体的比率设定为800以下，将成形压力设定在 7-17 Torr。 结果，在X射线摇摆曲线的FWHM中，AlN膜的结晶度显现为90弧秒以下，AlN膜的表面平坦度显现为20以下。 因此，由基材和AlN膜构成的基板优选用于声表面波器件，如果使用基板，则与理论传播速度的偏差设定为1.5m / sec以下。

公开(公告)号：US06727164B2

公开(公告)日：2004-04-27

申请号：US10060802

申请日：2002-01-30

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka ,  Keiichiro Asai

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka ,  Keiichiro Asai

IPC分类号： H01L2120

CPC分类号： C23C16/4401 ,  C23C16/4583

摘要： In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable from the base plate. A substrate for the film to be formed upon is set in a recessed portion formed by disposing the outer member on the base plate.

摘要翻译： 在通过MOCVD方法制造半导体氮化物膜时，使用基座托盘。 基座托盘由基板和可脱离基板的外部构件构成。 将要形成的膜的基底设置在通过将外部构件设置在基板上而形成的凹部中。

公开(公告)号：US06649493B2

公开(公告)日：2003-11-18

申请号：US10044778

申请日：2001-11-07

申请人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L2130

CPC分类号： C30B25/18 ,  C23C16/0218 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride comprising at least one Group III element and includes at least 50 atomic percent of elemental Al with respect to all of the Group III elements of the Group III nitride of the underfilm. The surface of the underfilm is contoured (concave-convex) and includes flat regions, and less than 50% of the underfilm surface is occupied by the flat regions.

摘要翻译： 提供了一种制造III族氮化物膜的方法，包括以下步骤：制备衬底，形成底膜，然后在底膜上形成III族氮化物膜。 底膜是包含至少一种III族元素的III族氮化物，并且相对于下膜的III族氮化物的所有III族元素包括至少50原子％的元素Al。 底膜的表面是轮廓（凹凸）并且包括平坦区域，并且小于50％的底膜表面被平坦区域占据。

公开(公告)号：US07955437B2

公开(公告)日：2011-06-07

申请号：US10737602

申请日：2003-12-16

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/301 ,  C23C16/4401 ,  C23C16/4411 ,  C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

摘要： An apparatus for fabricating a III-V nitride film by a MOCVD method, including a reactor prepared horizontally, a susceptor to hold a substrate thereon installed in the reactor, a heater to heat the substrate to a predetermined temperature via the susceptor, and a cooling mechanism to directly cool down at least the portion of the inner wall of the reactor opposite to the substrate.

摘要翻译： 一种用于通过MOCVD方法制造III-V族氮化物膜的装置，包括水平准备的反应器，用于将其上安装在反应器中的基板保持在其上的加热器，通过基座将基板加热至预定温度，以及冷却 直接冷却至少与反应器的反应器内壁的部分相反的机构。

公开(公告)号：US06989202B2

公开(公告)日：2006-01-24

申请号：US10891340

申请日：2004-07-14

申请人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： B32B9/00

CPC分类号： C30B25/18 ,  C23C16/0218 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride including at least 50 atomic percent of elemental Al for each of the Group III elements of the underfilm Group III nitride. The surface of the underfilm includes a contoured portion and a flat region, and less than 50% of the surface is occupied by the flat region.

公开(公告)号：US06709703B2

公开(公告)日：2004-03-23

申请号：US10010945

申请日：2001-12-06

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： C23C1634

CPC分类号： C23C16/301 ,  C23C16/4401 ,  C23C16/4411 ,  C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

摘要： A substrate is set on a susceptor installed in a reactor and arranged horizontally. A cooling jacket is provided at a portion of the inner wall of the reactor that is opposite to the substrate. By flowing a given cooling medium through the cooling jacket with a pump connected to the jacket, at least the opposite portion of the inner wall is cooled down, which inhibits the reaction between raw material gases introduced into the reactor. As a result, in fabricating a III-V nitride film, the film growth rate is developed and the crystal quality is developed.

摘要翻译： 将基板设置在安装在反应器中并且水平布置的基座上。 在反应器内壁的与衬底相对的部分设置有冷却套。 通过使给定的冷却介质通过连接到护套的泵流过冷却套，至少内壁的相对部分被冷却，这抑制了引入到反应器中的原料气体之间的反应。 结果，在制造III-V族氮化物膜时，显影膜生长速度并且开发出晶体质量。

公开(公告)号：US06623877B2

公开(公告)日：2003-09-23

申请号：US09962932

申请日：2001-09-25

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： B32B900

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T428/12681 ,  Y10T428/31848

摘要： An epitaxial wafer includes a base material made of sapphire-SiC single crystal or the like, a III nitride underfilm including at least Al epitaxially grown on the base material and a GaN film, preferably having a thickness of 50 Å or more, formed on the underfilm. In fabricating III nitride films on the epitaxial wafer, the oxidized surface layer of the GaN film is removed through an etching process, and subsequently, another III nitride film is formed thereon.

摘要翻译： 外延晶片包括由蓝宝石-SiC单晶等制成的基材，在基材上至少包含外延生长的Al的III族氮化物底膜和优选形成有厚度为50以上的GaN膜 底膜 在外延晶片上制造III族氮化物膜时，通过蚀刻工艺去除GaN膜的氧化表面层，随后在其上形成另外的III族氮化物膜。