发明授权
US06773515B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
失效
FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻
- 专利标题： FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
- 专利标题（中）： FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻
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申请号： US10050644申请日： 2002-01-16
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公开(公告)号： US06773515B2公开(公告)日： 2004-08-10
- 发明人: Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
- 申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
- 主分类号： C23C800
- IPC分类号： C23C800
摘要：
A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
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