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1.发明授权FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻公开(公告)号：US07262941B2
公开(公告)日：2007-08-28
申请号：US10856180
申请日：2004-05-28
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G11B5/39
CPC分类号： C22C38/10 , B32B15/01 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C22C38/12 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
摘要翻译： 一种具有合成反铁磁性钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件和包括单个镜面反射纳米氧化物层（NOL）或包含非金属层的双层和镜面反射纳米氧化物层 反射纳米氧化层。 由于它们的结构及其制造方法的结果，这些元件具有比现有技术的元件更高的GMR比和更低的电阻。
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2.发明授权FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效FeTa纳米氧化物层，用于增强底部自旋阀结构中的巨磁阻公开(公告)号：US06909583B2
公开(公告)日：2005-06-21
申请号：US10437090
申请日：2003-05-13
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要翻译： 一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。 根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。
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3.发明授权FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻公开(公告)号：US06773515B2
公开(公告)日：2004-08-10
申请号：US10050644
申请日：2002-01-16
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： C23C800
CPC分类号： C22C38/10 , B32B15/01 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C22C38/12 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
摘要翻译： 一种用于形成具有合成反铁磁钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件的方法和包括单个镜面反射纳米氧化物层（NOL）或包含非金属的双层的双层的覆盖层 层和镜面反射纳米氧化物层和如此形成的传感器元件。 制造这些传感器元件的方法提供了具有比现有技术的元件更高的GMR比和较低电阻的元件。
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公开(公告)号：US06581272B1
公开(公告)日：2003-06-24
申请号：US10037812
申请日：2002-01-04
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要翻译： 一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。 根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。
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公开(公告)号：US20080253024A1
公开(公告)日：2008-10-16
申请号：US11691907
申请日：2007-03-27
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163
摘要： A recording element supported by a slider includes a non-magnetic film and a magnetic pole film. The non-magnetic film has a depression whose inner surface is provided with an amorphous electrode film used as a plating seed film. Above the electrode film, the magnetic pole film is grown by plating. The magnetic pole film may be either an electroplated film grown on the electrode film to have a maximum crystal grain size of 20 nm or less or an electroless plated film. This decreases coercive force of the magnetic pole film.
摘要翻译： 由滑块支撑的记录元件包括非磁性膜和磁极膜。 非磁性膜具有凹部，其内表面设置有用作电镀种子膜的非晶电极膜。 在电极膜的上方，通过电镀生长磁极膜。 磁极膜可以是在电极膜上生长的电镀膜，其最大晶粒尺寸为20nm以下，也可以为非电解镀膜。 这降低了磁极膜的矫顽力。
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6.发明授权公开(公告)号：US08243387B2
公开(公告)日：2012-08-14
申请号：US11733469
申请日：2007-04-10
IPC分类号： G11B5/31
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3133 , G11B5/3163
摘要： The present invention relates to a perpendicular recording magnetic head. A perpendicular recording element includes a main magnetic pole film for emitting a perpendicular magnetic field and is supported by a slider. The main magnetic pole film includes an electrode film and a plated film, the electrode film is an alloy film of at least one element selected from the platinum group and Ni, and the plated film is a magnetic film grown on the electrode film.
摘要翻译： 本发明涉及一种垂直记录磁头。 垂直记录元件包括用于发射垂直磁场并由滑块支撑的主磁极膜。 主磁极膜包括电极膜和电镀膜，电极膜是选自铂族和Ni中的至少一种元素的合金膜，电镀膜是在电极膜上生长的磁性膜。
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7.发明授权公开(公告)号：US07859792B2
公开(公告)日：2010-12-28
申请号：US11691907
申请日：2007-03-27
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163
摘要： A recording element supported by a slider includes a non-magnetic film and a magnetic pole film. The non-magnetic film has a depression whose inner surface is provided with an amorphous electrode film used as a plating seed film. Above the electrode film, the magnetic pole film is grown by plating. The magnetic pole film may be either an electroplated film grown on the electrode film to have a maximum crystal grain size of 20 nm or less or an electroless plated film. This decreases coercive force of the magnetic pole film.
摘要翻译： 由滑块支撑的记录元件包括非磁性膜和磁极膜。 非磁性膜具有凹部，其内表面设置有用作电镀种子膜的非晶电极膜。 在电极膜的上方，通过电镀生长磁极膜。 磁极膜可以是在电极膜上生长的电镀膜，其最大晶粒尺寸为20nm以下，也可以为非电解镀膜。 这降低了磁极膜的矫顽力。
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公开(公告)号：US07848055B2
公开(公告)日：2010-12-07
申请号：US11763057
申请日：2007-06-14
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278
摘要： The present invention relates to a perpendicular recording magnetic head. A main magnetic pole film of a perpendicular recording element is a plated film formed on an electrode film and having a small width portion and a large width portion. The small width portion is a portion for emitting a perpendicular magnetic field from a front end thereof, while the large width portion is portion being continuous with a rear end of the small width portion and having an increased width. The electrode film is different in film thickness between beneath a portion of the plated film forming at least the front end of the small width portion and beneath a portion of the plated film forming the large width portion.
摘要翻译： 本发明涉及一种垂直记录磁头。 垂直记录元件的主磁极膜是形成在电极膜上并具有小宽度部分和宽宽度部分的电镀膜。 小宽度部分是用于从其前端发射垂直磁场的部分，而大宽度部分是与小宽度部分的后端连续并且具有增加的宽度的部分。 所述电极膜的厚度不同，所述电镀膜的至少形成在所述小宽度部的前端部的部分之下，并且形成所述大宽度部的所述镀膜的部分之下。
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9.发明申请公开(公告)号：US20080253027A1
公开(公告)日：2008-10-16
申请号：US11733469
申请日：2007-04-10
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3133 , G11B5/3163
摘要： The present invention relates to a perpendicular recording magnetic head. A perpendicular recording element includes a main magnetic pole film for emitting a perpendicular magnetic field and is supported by a slider. The main magnetic pole film includes an electrode film and a plated film, the electrode film is an alloy film of at least one element selected from the platinum group and Ni, and the plated film is a magnetic film grown on the electrode film.
摘要翻译： 本发明涉及一种垂直记录磁头。 垂直记录元件包括用于发射垂直磁场并由滑块支撑的主磁极膜。 主磁极膜包括电极膜和电镀膜，电极膜是选自铂族和Ni中的至少一种元素的合金膜，电镀膜是在电极膜上生长的磁性膜。
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公开(公告)号：US5862022A
公开(公告)日：1999-01-19
申请号：US933347
申请日：1997-09-19
申请人： Kiyoshi Noguchi , Taro Oike , Satoru Araki , Manabu Ohta , Masashi Sano
发明人： Kiyoshi Noguchi , Taro Oike , Satoru Araki , Manabu Ohta , Masashi Sano
CPC分类号： G11B5/3967 , H01L43/08
摘要： This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided.
摘要翻译： 本发明涉及铁磁隧道结，MR元件和磁头。 铁磁隧道结由顺序层叠第一铁磁膜，绝缘膜和第二铁磁膜构成。 这些层压在适当的绝缘基板上。 本发明的特征在于，绝缘膜的阻挡电位设定在0.5〜3eV的范围内。 提供了具有良好再生特性可实现高MR比的铁磁隧道结。
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