发明授权
US06780776B1 Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer
有权
氮化物偏移间隔物，通过使用多重再氧化层作为蚀刻停止层来最小化硅凹槽
- 专利标题： Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer
- 专利标题（中）： 氮化物偏移间隔物，通过使用多重再氧化层作为蚀刻停止层来最小化硅凹槽
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申请号： US10023328申请日： 2001-12-20
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公开(公告)号： US06780776B1公开(公告)日： 2004-08-24
- 发明人: Wen-Jie Qi , John G. Pellerin , William G. En , Mark W. Michael , Darin A. Chan
- 申请人： Wen-Jie Qi , John G. Pellerin , William G. En , Mark W. Michael , Darin A. Chan
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
A method of forming a semiconductor device provides a gate electrode on a substrate and forms a polysilicon reoxidation layer over the substrate and the gate electrode. A nitride layer is deposited over the polysilicon reoxidation layer and anisotropically etched The etching stops on the polysilicon reoxidation layer, with nitride offset spacers being formed on the gate electrode. The use of the polysilicon reoxidation layer as an etch stop layer prevents the gouging of the silicon substrate underneath the nitride layer, while allowing the offset spacers to be formed.
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