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US06781191B2 Stacked gate flash memory device and method of fabricating the same 有权

  • Patent Title: Stacked gate flash memory device and method of fabricating the same
  • Application No.: US10621431
    Application Date: 2003-07-16
  • Publication No.: US06781191B2
    Publication Date: 2004-08-24
  • Inventor: Chi-Hui Lin
  • Applicant: Chi-Hui Lin
  • Priority: TW91124264A 20021021
  • Main IPC: H01L29788
  • IPC: H01L29788
Stacked gate flash memory device and method of fabricating the same
Abstract:
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device in accordance with the invention is disposed in a cell trench within a substrate to achieve higher integration of memory cells.
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