A spin valve sensor includes a free layer structure which is located between first and second spacer layers and the first and second spacer layers are located between first and second AP pinned layer structures. Each of the AP pinned layer structures has first and second AP pinned layers with the first AP pinned layer of the first AP pinned layer structure interfacing the first spacer layer and the first AP pinned layer of the second AP pinned layer structure interfacing the second spacer layer. The magnetic thickness of each of the first AP pinned layers is either greater or less than the magnetic thickness of either of the second AP pinned layers of the first and second AP pinned layer structures so that a magnetic field oriented perpendicular to an air bearing surface (ABS) of the sensor sets the magnetic moments of the first and second AP pinned layer structures in-phase so that changes in resistances of the sensor upon rotation of a magnetic moment of the free layer structure is additive.