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    Magnetoresistive sensor having biasing AFM layer in contact with free layer and a track width defined by a lead contact area
    2.
    发明授权
    Magnetoresistive sensor having biasing AFM layer in contact with free layer and a track width defined by a lead contact area 有权
    具有偏置AFM层与自由层接触的磁阻传感器和由引线接触区域限定的轨道宽度

    公开(公告)号：US07697246B2

    公开(公告)日：2010-04-13

    申请号：US11502955

    申请日：2006-08-10

    Applicant: James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    Inventor： James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    IPC: G11B5/39

    CPC classification number: H01L43/10 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398

    Abstract: A current perpendicular to plane (CPP) magnetoresistive sensor having a current path defined by first and second overlying insulation layers between which an electrically conductive lead makes content with a surface of the sensor stack. The current path being narrower than the width of the sensor stack allows the outer edges of the sensor stack to be moved outside of the active area of the sensor. This results in a sensor that is unaffected by damage at outer edges of the sensor layers. The sensor stack includes a free layer that is biased by direct exchange coupling with a layer of antiferromagnetic material (AFM layer). The strength of the exchange field can be controlled by adding Cr to the AFM material to ensure that the exchange field is sufficiently weak to avoid pinning the free layer.

    Abstract translation: 一种垂直于平面（CPP）磁阻传感器的电流，其具有由第一和第二上覆绝缘层限定的电流路径，导电引线与传感器堆叠的表面成为内容。 当前路径比传感器堆叠的宽度窄，允许传感器堆叠的外边缘移动到传感器的有效区域之外。 这导致传感器不受传感器层外边缘损坏的影响。 传感器堆叠包括通过与反铁磁材料层（AFM层）的直接交换耦合而偏置的自由层。 可以通过向AFM材料添加Cr来控制交换场的强度，以确保交换场足够弱以避免固定自由层。

    Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges
    3.
    发明授权
    Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges 有权
    具有形状增强钉扎，磁通导向结构和无损虚拟边缘的磁阻传感器

    公开(公告)号：US07580230B2

    公开(公告)日：2009-08-25

    申请号：US11588013

    申请日：2006-10-24

    Applicant: James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    Inventor： James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    IPC: G11B5/39 ,  G11B5/33

    CPC classification number: G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996

    Abstract: A magnetoresistive sensor having a shape enhanced pinning and a flux guide structure. First and second hard bias layers and lead layers extend from the sides of a sensor stack. The hard bias layers and leads have a stripe height that is smaller than the stripe height of a free layer, resulting in a free layer that extends beyond the back edge of the lead and hard bias layer. This portion of the free layer that extends beyond the back edge of the leads and hard bias layers provides a back flux guide. Similarly, the sensor may have a free layer that extends beyond the front edge of the lead and hard bias layers to provide a front flux guide. The pinned layer extends significantly beyond the back edge of the free layer, providing the pinned layer with a strong shape enhanced magnetic anisotropy.

    Abstract translation: 具有形状增强的钉扎和磁通引导结构的磁阻传感器。 第一和第二硬偏压层和引线层从传感器堆叠的侧面延伸。 硬偏压层和引线具有小于自由层的条带高度的条纹高度，导致延伸超过引线和硬偏置层的后边缘的自由层。 自由层的延伸超过引线和硬偏置层的后边缘的部分提供了反向通量引导件。 类似地，传感器可以具有延伸超过引线和硬偏置层的前边缘的自由层，以提供前通量引导件。 被钉扎层明显地延伸超过自由层的后边缘，为钉扎层提供强的形状增强的磁各向异性。

    MAGNETORESISTIVE SENSOR WITH NITROGENATED HARD BIAS LAYER FOR IMPROVED COERCIVITY
    4.
    发明申请
    MAGNETORESISTIVE SENSOR WITH NITROGENATED HARD BIAS LAYER FOR IMPROVED COERCIVITY 有权
    具有氮化偏碳酸盐的磁阻传感器，用于改进合格

    公开(公告)号：US20090154032A1

    公开(公告)日：2009-06-18

    申请号：US11959327

    申请日：2007-12-18

    Applicant: James Mac Freitag

    Inventor： James Mac Freitag

    IPC: G11B5/33

    CPC classification number: G11B5/3932 ,  G01R33/1284

    Abstract: A magnetoresistive sensor having a hard bias structure that provides improved bias field robustness. The sensor includes a nitrogenated hard bias layer and a seed layer that include a nitrogenated NiTa layer and a layer of Ru. The seed layer can also include a layer of CrMn disposed between the layer of NiTa and the layer of Ru. The novel seed structure allows a nitrogenated hard bias layer to be used, while maintaining a high magnetic coercivity of the hard bias layer.

    Abstract translation: 具有硬偏置结构的磁阻传感器，其提供改进的偏置场稳健性。 传感器包括氮化的硬偏压层和包含氮化的NiTa层和Ru层的种子层。 种子层还可以包括设置在NiTa层和Ru层之间的CrMn层。 新颖的种子结构允许使用氮化的硬偏压层，同时保持硬偏压层的高磁矫顽力。

    Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges
    6.
    发明申请
    Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges 有权
    具有形状增强钉扎，磁通导向结构和无损虚拟边缘的磁阻传感器

    公开(公告)号：US20080094761A1

    公开(公告)日：2008-04-24

    申请号：US11588013

    申请日：2006-10-24

    Applicant: James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    Inventor： James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    IPC: G11B5/127 ,  G11B5/33

    CPC classification number: G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996

    Abstract: A magnetoresistive sensor having a shape enhanced pinning and a flux guide structure. The sensor includes a sensor stack with a pinned layer, spacer layer and pinned layer. First and second hard bias layers and lead layers extend from the sides of the sensor stack. The hard bias layers and leads have a stripe height that is smaller than the stripe height of the free layer, resulting in a free layer that extends beyond the back edge of the lead and hard bias layer. This portion of the free layer that extends beyond the back edge of the leads and hard bias layers provides a back flux guide. Similarly, the sensor may have a free layer that extends beyond the front edge of the lead and hard bias layers to provide a front flux guide. The pinned layer extends significantly beyond the back edge of the free layer, providing the pinned layer with a strong shape enhanced magnetic anisotropy. The sensor may have a lead over layer structure, with the sensor layers extending significantly beyond the inner ends of the leads, thereby moving the outer edges of the sensor layers outside of the track width of the sensor. This eliminates the effect of magnetic damage at the outer edges of the free layer.

    Abstract translation: 具有形状增强的钉扎和磁通引导结构的磁阻传感器。 传感器包括具有被钉扎层，间隔层和钉扎层的传感器堆叠。 第一和第二硬偏压层和引线层从传感器堆叠的侧面延伸。 硬偏置层和引线具有小于自由层的条纹高度的条纹高度，导致延伸超过引线和硬偏置层的后边缘的自由层。 自由层的延伸超过引线和硬偏置层的后边缘的部分提供了反向通量引导件。 类似地，传感器可以具有延伸超过引线和硬偏置层的前边缘的自由层，以提供前通量引导件。 被钉扎层明显地延伸超过自由层的后边缘，为钉扎层提供强的形状增强的磁各向异性。 传感器可以具有超导层结构，其中传感器层明显地超过引线的内端，从而将传感器层的外边缘移动到传感器的轨道宽度之外。 这消除了在自由层的外边缘处的磁损伤的影响。

    Magnetoresistive sensor having shape enhanced pinning and low lead resistance
    7.
    发明申请
    Magnetoresistive sensor having shape enhanced pinning and low lead resistance 失效
    具有形状增强钉扎和低引线电阻的磁阻传感器

    公开(公告)号：US20080055794A1

    公开(公告)日：2008-03-06

    申请号：US11513479

    申请日：2006-08-30

    Applicant: James Mac Freitag ,  Mustafa Michael Pinarbasi

    Inventor： James Mac Freitag ,  Mustafa Michael Pinarbasi

    IPC: G11B5/127 ,  G11B5/33

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3932 ,  G11B5/398 ,  G11B2005/3996

    Abstract: A magnetoresistive sensor having a pinned layer that extends beyond the free layer in the stripe height direction for improved shape enhanced pinning. The sensor includes hard bias layers and leads that extend in the stripe height direction beyond the stripe height of the free layer, providing increased conductive material for improved conduction of sense current to the sensor. The hard bias layers contact the sensor stack in the region between the ABS and the stripe height of the free layer, but are electrically insulated from the pinned layer in regions beyond the stripe height of the free layer by a layer of conformally deposited non-magnetic, electrically insulating material such as alumina.

    Abstract translation: 磁阻传感器具有在条带高度方向上延伸超过自由层的钉扎层，以改善形状增强的钉扎。 传感器包括硬偏压层和引线，其在条带高度方向上延伸超过自由层的条带高度，提供增加的导电材料，以改善感测电流对传感器的传导。 硬偏置层在ABS和自由层的条纹高度之间的区域中接触传感器堆叠，但是在超过自由层的条纹高度的区域中的被钉扎层与被固定层之间通过共形沉积的非磁性层 ，电绝缘材料如氧化铝。

    Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layer
    8.
    发明授权
    Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layer 有权
    具有高矫顽力反平行（AP）钉扎层的自固定自旋阀传感器

    公开(公告)号：US07177120B2

    公开(公告)日：2007-02-13

    申请号：US10727882

    申请日：2003-12-03

    Applicant: James Mac Freitag ,  Mustafa Michael Pinarbasi

    Inventor： James Mac Freitag ,  Mustafa Michael Pinarbasi

    IPC: G11B5/39

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3912 ,  G11B2005/3996

    Abstract: A magnetic head assembly has a read head that includes a sensor wherein the sensor includes a self-pinned antiparallel (AP) pinned layer structure, a ferromagnetic free layer structure that has a magnetic moment that is free to rotate in response to signal fields and a spacer layer which is located between the free layer and AP pinned layer structures. The self-pinned AP pinned layer structure includes first and second antiparallel (AP) pinned layers, an antiparallel coupling (APC) layer located between and interfacing the first and second AP pinned layers wherein the second AP pinned layer is located between the first AP pinned layer and the spacer layer. The first AP pinned layer is composed of cobalt platinum chromium (CoPtCr).

    Abstract translation: 磁头组件具有读头，该读头包括传感器，其中传感器包括自固定反平行（AP）钉扎层结构，铁磁自由层结构具有响应于信号场自由旋转的磁矩和 间隔层位于自由层和AP钉扎层结构之间。 自固定AP钉扎层结构包括第一和第二反平行（AP）钉扎层，位于第一和第二AP钉扎层之间并且连接第一和第二AP钉扎层的反平行耦合（APC）层，其中第二AP钉扎层位于第一AP钉扎 层和间隔层。 第一个AP钉扎层由钴铂铬（CoPtCr）组成。

    Spin valve sensor having an antiparallel (AP) self-pinned layer structure comprising cobalt for high magnetostriction
    9.
    发明授权
    Spin valve sensor having an antiparallel (AP) self-pinned layer structure comprising cobalt for high magnetostriction 有权
    旋转阀传感器具有包括用于高磁致伸缩的钴的反平行（AP）自固定层结构

    公开(公告)号：US07119997B2

    公开(公告)日：2006-10-10

    申请号：US10675832

    申请日：2003-09-30

    Applicant: James Mac Freitag ,  Mustafa Michael Pinarbasi

    Inventor： James Mac Freitag ,  Mustafa Michael Pinarbasi

    IPC: G11B5/127

    CPC classification number: G11B5/332

    Abstract: In one illustrative embodiment of the invention, a spin valve sensor of a magnetic head has a free layer structure; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer structure and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer; a second AP pinned layer; an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. At least one of the first and the second AP pinned layers is made of cobalt having no iron content. The other AP pinned layer may be formed of cobalt, cobalt-iron, or other suitable material. The use of cobalt in the AP self-pinned layer structure increases its magnetostriction to increase the self-pinning effect. Preferably, the first AP pinned layer is cobalt-iron and the second AP pinned layer is cobalt which provides for both an increase in magnetostriction and magnetoresistive coefficient Δr/R of the sensor.

    Abstract translation: 在本发明的一个说明性实施例中，磁头的自旋阀传感器具有自由层结构; 反平行（AP）自固定层结构; 以及在自由层结构和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括第一AP固定层; 第二个AP钉扎层; 形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一和第二AP钉扎层中的至少一个由不含铁含量的钴制成。 另一个AP钉扎层可以由钴，钴 - 铁或其它合适的材料形成。 在AP自固化层结构中使用钴增加其磁致伸缩以增加自固定效应。 优选地，第一AP钉扎层是钴铁，并且第二AP钉扎层是钴，其提供传感器的磁致伸缩系数和磁阻系数Deltar / R的增加。

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