发明授权
- 专利标题: Non-volatile semiconductor memory
- 专利标题(中): 非易失性半导体存储器
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申请号: US10139716申请日: 2002-05-06
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公开(公告)号: US06788600B2公开(公告)日: 2004-09-07
- 发明人: Hiroshi Sugawara , Toshikatsu Jinbo , Atsunori Miki , Takayuki Kurokawa , Kenichi Ushikoshi
- 申请人: Hiroshi Sugawara , Toshikatsu Jinbo , Atsunori Miki , Takayuki Kurokawa , Kenichi Ushikoshi
- 优先权: JP2001-135774 20010507
- 主分类号: G11C702
- IPC分类号: G11C702
摘要:
A non-volatile flash memory (100) that may have an improved layout freedom is disclosed. Non-volatile flash memory (100) may include banks (B0 and B1). Each bank (B0 and B1) may include memory cell arrays (MCA00 to MCA03) including a plurality of memory cells (MC) connected to sub bit lines (LB). A plurality of sub bit lines (LB) may be selectively connected to a main bit line (MB) by a group switch (Y1S0 and Y1S1). A group of main bit lines (MB) may be disposed over a memory cell array. A group of main bit lines (MB) may be selectively connected to a sense amplifier block (SAB) by a group switch group (Y2S0 and Y2S1) and a bank switch group (Y3S0 and Y3S1). In this way, a sense amplifier block (SAB) may be shared by a plurality of groups of main bit lines (MB). In this way, layout freedom may be improved.
公开/授权文献
- US20020163033A1 Non-volatile semiconductor memory 公开/授权日:2002-11-07