发明授权
US06800544B2 Semiconductor device having a metal-semiconductor junction with a reduced contact resistance
失效
具有具有降低的接触电阻的金属 - 半导体结的半导体器件
- 专利标题： Semiconductor device having a metal-semiconductor junction with a reduced contact resistance
- 专利标题（中）： 具有具有降低的接触电阻的金属 - 半导体结的半导体器件
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申请号： US10222777申请日： 2002-08-19
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公开(公告)号： US06800544B2公开(公告)日： 2004-10-05
- 发明人: Junichi Murota , Yosuke Shimamune , Masao Sakuraba , Takashi Matsuura
- 申请人： Junichi Murota , Yosuke Shimamune , Masao Sakuraba , Takashi Matsuura
- 优先权： JP2000-270377 20000906
- 主分类号： H01L2128
- IPC分类号： H01L2128
摘要：
A metal-semiconductor junction comprising a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.