公开(公告)号：US06621145B2

公开(公告)日：2003-09-16

申请号：US09866695

申请日：2001-05-30

申请人： Junichi Murota ,  Yosuke Shimamune ,  Masao Sakuraba ,  Takashi Matsuura

发明人： Junichi Murota ,  Yosuke Shimamune ,  Masao Sakuraba ,  Takashi Matsuura

IPC分类号： H01L29167

CPC分类号： H01L21/02576 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28562 ,  H01L29/456

摘要： A metal-semiconductor junction comprises a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

摘要翻译： 金属 - 半导体结包括布线金属层和半导体层。 为了降低结的接触电阻，在半导体层的近表面部分设置掺杂有n型或p型杂质且具有1021cm-3以上的高载流子浓度的区域 与金属层相比为10nm以下，高载流子浓度区域由n型或p型杂质层和IV族半导体层构成，这些层通过例如气相 成长。

公开(公告)号：US5705224A

公开(公告)日：1998-01-06

申请号：US393821

申请日：1995-01-31

申请人： Junichi Murota ,  Shoichi Ono ,  Masao Sakuraba ,  Nobuo Mikoshiba ,  Harushige Kurokawa ,  Fumihide Ikeda

发明人： Junichi Murota ,  Shoichi Ono ,  Masao Sakuraba ,  Nobuo Mikoshiba ,  Harushige Kurokawa ,  Fumihide Ikeda

IPC分类号： C23C16/48 ,  C30B25/10 ,  C30B23/00 ,  C23C16/00

CPC分类号： C30B25/105 ,  C23C16/482 ,  C30B29/08

摘要： A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.

摘要翻译： 一种气相沉积设备和方法，其中脉冲波形光被施加到密封在反应室中的样品。 样品暴露于气体材料，同时施加脉冲波形光产生一个或多个原子层。 可以通过施加脉冲波形光交替引入气态材料来形成多个物质的交替层或多个物质的交替多层。

公开(公告)号：US06800544B2

公开(公告)日：2004-10-05

申请号：US10222777

申请日：2002-08-19

申请人： Junichi Murota ,  Yosuke Shimamune ,  Masao Sakuraba ,  Takashi Matsuura

发明人： Junichi Murota ,  Yosuke Shimamune ,  Masao Sakuraba ,  Takashi Matsuura

IPC分类号： H01L2128

CPC分类号： H01L21/02576 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28562 ,  H01L29/456

摘要： A metal-semiconductor junction comprising a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

摘要翻译： 一种包括布线金属层和半导体层的金属 - 半导体结。 为了降低结的接触电阻，在半导体的近表面部分提供掺杂有n型或p型杂质并且具有10,23或更大载流子浓度的区域 层（距离金属层10nm以下的距离），高载流子浓度区域由n或p型杂质层和IV族半导体层构成，这些层被交替地沉积在另一层上， 例如，气相生长。