发明授权
- 专利标题: Method of selective plating on a substrate
- 专利标题(中): 在基板上选择性镀覆的方法
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申请号: US10249305申请日: 2003-03-28
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公开(公告)号: US06823585B2公开(公告)日: 2004-11-30
- 发明人: Mark J. LaPlante , Jon A. Casey , Thomas A. Wassick , David C. Long , Krystyna W. Semkow , Patrick E. Spencer , Robert A. Rita , Richard F. Indyk , Kathleen M. Wiley , Brian R. Sundlof , James Balz , Lori A. Maiorino , Donald R. Wall , Glenn A. Pomerantz
- 申请人: Mark J. LaPlante , Jon A. Casey , Thomas A. Wassick , David C. Long , Krystyna W. Semkow , Patrick E. Spencer , Robert A. Rita , Richard F. Indyk , Kathleen M. Wiley , Brian R. Sundlof , James Balz , Lori A. Maiorino , Donald R. Wall , Glenn A. Pomerantz
- 主分类号: H01R4300
- IPC分类号: H01R4300
摘要:
A method and structure to form surface plating metallization on a substrate. Two layers of tape are applied to the surface of the substrate. A first path is cut through both layers of tape exposing the substrate surface. The first path connects at least one conductive via on the top surface of the substrate. A second path is cut through the second layer of tape exposing the first layer of tape. The second path is routed from the first path to an edge of the substrate A seed layer is deposited over the surface of the second layer of tape thereby creating a seeded plating path in the first path and a sacrificial seeded conduction path in the second path. Connecting the sacrificial seeded conduction path to a plating potential at the edge of the substrate creates a plated path on the surface of the substrate. The sacrificial path is removed when the tape is removed.
公开/授权文献
- US20040187303A1 Selective plating using dual lift-off mask 公开/授权日:2004-09-30
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