发明授权
US06838114B2 Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
失效
用于在将材料沉积到微器件工件上的过程中控制气体脉动的方法
- 专利标题: Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
- 专利标题(中): 用于在将材料沉积到微器件工件上的过程中控制气体脉动的方法
-
申请号: US10155547申请日: 2002-05-24
-
公开(公告)号: US06838114B2公开(公告)日: 2005-01-04
- 发明人: Craig M. Carpenter , Ross S. Dando , Allen P. Mardian
- 申请人: Craig M. Carpenter , Ross S. Dando , Allen P. Mardian
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: C23C16/44
- IPC分类号: C23C16/44 ; C23C16/455 ; C23C16/52 ; C23C16/00
摘要:
Methods for depositing materials onto micro-device workpieces in a reaction chamber. One embodiment of such a method comprises providing a flow of a first precursor through the reaction chamber to deposit the first precursor onto the micro-device workpiece in the reaction chamber, and providing a flow of a purge gas through the reaction chamber to purge excess amounts of the first precursor. The method continues by monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas in the reaction chamber as the first precursor and/or the purge gas flows through the reaction chamber. An additional aspect of this method is terminating the flow of the first precursor and/or the flow of the purge gas based on the monitored parameter of the quantity of the first precursor and/or the purge gas. The procedure of monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas can comprise determining a concentration of the first precursor and/or the purge gas in the reaction chamber using a selected radiation.