-
1.发明授权Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 失效用于在将材料沉积到微器件工件上的过程中控制气体脉动的装置公开(公告)号：US07481887B2
公开(公告)日：2009-01-27
申请号：US11027809
申请日：2004-12-29
CPC分类号： C23C16/45525 , C23C16/52
摘要： An apparatus for depositing materials onto a micro-device workpiece includes a gas source system configured to provide a first precursor, a second precursor, and a purge gas. The apparatus can also include a valve assembly coupled to the gas source system. The valve assembly is configured to control a flow of the first precursor, a flow the second precursor, and a flow of the purge gas. Another component of the apparatus is a reaction chamber including an inlet coupled to the valve assembly, a workpiece holder in the reaction chamber, and an outlet downstream from the workpiece holder. The apparatus also includes a monitoring system and a controller. The monitoring system comprises a radiation source that directs a selected radiation through the reaction chamber and a detector that senses a parameter of the radiation directed through the reaction chamber. The controller is operatively coupled to the monitoring system and the valve assembly. The controller contains computer operable instructions to terminate the flow of the first precursor, the flow of the second precursor and/or the flow of the purge gas based on the parameter sensed by the monitoring system in real-time during a deposition cycle of a workpiece.
摘要翻译： 用于将材料沉积到微器件工件上的装置包括构造成提供第一前体，第二前体和吹扫气体的气体源系统。 该装置还可以包括联接到气源系统的阀组件。 阀组件被配置为控制第一前体的流动，第二前体的流动和净化气体的流动。 该装置的另一部件是反应室，其包括联接到阀组件的入口，反应室中的工件保持器和工件保持器下游的出口。 该装置还包括监视系统和控制器。 监测系统包括将选定的辐射引导通过反应室的辐射源和感测通过反应室引导的辐射的参数的检测器。 控制器可操作地耦合到监视系统和阀组件。 控制器包含计算机可操作的指令，以在工件的沉积循环期间实时地基于由监测系统感测的参数终止第一前体的流动，第二前体的流动和/或吹扫气体的流动 。
-
公开(公告)号：US07044997B2
公开(公告)日：2006-05-16
申请号：US10669755
申请日：2003-09-24
CPC分类号： C23C16/4412 , B01D5/0006 , B01D53/002 , B01D53/68 , B01D2251/2062 , B01D2258/0216 , Y10S55/15
摘要： A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed within the trap device, may influence the formation of deposits within the trap device, or may cause a precipitate to form. Deposit interaction elements may be employed to influence the distribution or redistribution of deposits within the trap device. Deposit interaction elements may effect thermal conditions, introduce substances, or physically interact with deposits within the trap device. Further, a storage region within the trap device may be used to accumulate deposits. In one embodiment, a substantially continuous path through the trap device may be maintained or preserved so that deposits form within the trap device except substantially along the path. The present invention also encompasses a method of operation of a trap device as well as a system incorporating same.
-
公开(公告)号：US06858264B2
公开(公告)日：2005-02-22
申请号：US10132003
申请日：2002-04-24
CPC分类号： C23C16/4405 , C23C16/4412
摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.
摘要翻译： 化学气相沉积室具有从其延伸的真空排气管。 在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。 真空排气管线的至少一部分与沉积室隔离。 在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。 在所述流动之后，真空排气管线和沉积室的部分设置成彼此流体连通，并且在有效地将流出物产物沉积在真空内壁上的条件下，在沉积室内的第二多个基板上沉积材料 排气管路。
-
4.发明授权公开(公告)号：US06800172B2
公开(公告)日：2004-10-05
申请号：US10082599
申请日：2002-02-22
申请人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
发明人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
IPC分类号： C23F100
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。
-
5.发明授权Method of replacing at least a portion of semiconductor substrate deposition process kit hardware, and method of depositing materials over a plurality of semiconductor substrates 失效替代半导体衬底沉积工艺组件硬件的至少一部分的方法以及在多个半导体衬底上沉积材料的方法公开(公告)号：US06787373B2
公开(公告)日：2004-09-07
申请号：US10396268
申请日：2003-03-24
IPC分类号： H01L2100
CPC分类号： C23C16/4401 , C23C16/54 , Y10S414/137
摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.
摘要翻译： 本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。 本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。 至少该夹具安装到身体的远端部分。 接合器的尺寸适合于通过身体的所述通道移动。 接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。 本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。 本发明包括在多个半导体衬底上沉积材料的方法。 考虑其他实现。
-
公开(公告)号：US07229666B2
公开(公告)日：2007-06-12
申请号：US10912878
申请日：2004-08-06
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/45519
摘要： Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.
摘要翻译： 化学气相沉积的方法包括提供至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 包括沉积室的至少一个工艺化学品入口。 衬底定位在腔室内，并且在衬底上方设置有效地将材料沉积到衬底上的工艺气体。 在提供工艺气体的同时，净化气体从由至少一个室壁表面包括的多个吹扫气体入口排出到室中。 吹扫气体入口与至少一个过程化学品入口分离，并且所述排放物在室壁表面上形成惰性气体窗帘。
-
7.发明授权Valve assemblies for use with a reactive precursor in semiconductor processing 失效用于半导体加工中的反应性前体的阀组件公开(公告)号：US07000636B2
公开(公告)日：2006-02-21
申请号：US10691769
申请日：2003-10-22
IPC分类号： F16K11/085
CPC分类号： C30B25/14 , C23C16/452 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45561 , C30B25/105 , Y10S118/90 , Y10T137/86839 , Y10T137/86863
摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括化学气相沉积方法，包括原子层沉积和用于半导体加工中的反应性前体的阀组件。 在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在化学气相沉积室内。 第一沉积前体被供给到位于沉积室上游的远程等离子体产生室，并且在远程室内产生等离子体，并有效地形成第一活性沉积前体物质。 第一种物质流入沉积室。 在流动期间，至少一些第一物质的流动被转移进入沉积室，同时在远程室内馈送和保持第一沉积前体的等离子体产生。 在某些时候，在远程室内进给和维持第一沉积前体的等离子体产生的同时停止转移。 考虑了其他方面和实现。
-
公开(公告)号：US06997403B2
公开(公告)日：2006-02-14
申请号：US10340976
申请日：2003-01-13
CPC分类号： H01L21/6708 , C23C16/4481
摘要： The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body and a plurality of peltier cells coupled to the body.
摘要翻译： 本发明一般涉及具有正液体截止的汽化器。 在一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口，位于主体内的喷嘴，喷嘴具有限定蒸发的液体出口的至少一个通过其形成的开口，以及 正截止阀，其一部分适于接合喷嘴的汽化液体出口。 在另一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口以及耦合到主体的多个珀耳帖细胞。
-
公开(公告)号：US06935372B2
公开(公告)日：2005-08-30
申请号：US11034015
申请日：2005-01-11
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455 , C30B25/10 , C30B25/14 , F16K11/085
CPC分类号： C30B25/14 , C23C16/452 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45561 , C30B25/105 , Y10S118/90 , Y10T137/86839 , Y10T137/86863
摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括化学气相沉积方法，包括原子层沉积，以及用于半导体加工中的反应性前体的阀组件。 在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在化学气相沉积室内。 第一沉积前体被供给到位于沉积室上游的远程等离子体产生室，并且在远程室内产生等离子体，并有效地形成第一活性沉积前体物质。 第一种物质流入沉积室。 在流动期间，至少一些第一物质的流动被转移进入沉积室，同时在远程室内馈送和保持第一沉积前体的等离子体产生。 在某些时候，在远程室内进给和维持第一沉积前体的等离子体产生的同时停止转移。 考虑了其他方面和实现。
-
公开(公告)号：US06787463B2
公开(公告)日：2004-09-07
申请号：US10340098
申请日：2003-01-10
申请人： Allen P. Mardian , Gurtej S. Sandhu
发明人： Allen P. Mardian , Gurtej S. Sandhu
IPC分类号： H01L2144
CPC分类号： H01L21/67017 , C23C16/455 , C23C16/45557
摘要： The invention includes reactive gaseous deposition precursor feed apparatus and chemical vapor deposition methods. In one implementation, a reactive gaseous deposition precursor feed apparatus includes a gas passageway having an inlet and an outlet. A variable volume accumulator reservoir is joined in fluid communication with the gas passageway. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a deposition chamber. A first deposition precursor is fed to an inlet of a variable volume accumulator reservoir. With the first deposition precursor therein, volume of the variable volume accumulator reservoir is decreased effective to expel first deposition precursor therefrom into the chamber under conditions effective to deposit a layer on the substrate.
摘要翻译： 本发明包括反应性气相沉积前体进料装置和化学气相沉积方法。 在一个实施方案中，反应性气相沉积前体进料装置包括具有入口和出口的气体通道。 可变体积蓄能器储存器与气体通道流体连通地连接。 在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在沉积室内。 第一沉积前体被供给到可变体积蓄能器储存器的入口。 利用其中的第一沉积前体，有效地在有效沉积基底上的层的条件下有效地将可变容积蓄积器储存器的体积排出到其中以将第一沉积前体排出到室中。
-
-
-
-
-
-
-
-
-
搜索结果
36 条记录 (耗时 0.017 秒)
