公开(公告)号：US07481887B2

公开(公告)日：2009-01-27

申请号：US11027809

申请日：2004-12-29

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： C23C16/45525 ,  C23C16/52

摘要： An apparatus for depositing materials onto a micro-device workpiece includes a gas source system configured to provide a first precursor, a second precursor, and a purge gas. The apparatus can also include a valve assembly coupled to the gas source system. The valve assembly is configured to control a flow of the first precursor, a flow the second precursor, and a flow of the purge gas. Another component of the apparatus is a reaction chamber including an inlet coupled to the valve assembly, a workpiece holder in the reaction chamber, and an outlet downstream from the workpiece holder. The apparatus also includes a monitoring system and a controller. The monitoring system comprises a radiation source that directs a selected radiation through the reaction chamber and a detector that senses a parameter of the radiation directed through the reaction chamber. The controller is operatively coupled to the monitoring system and the valve assembly. The controller contains computer operable instructions to terminate the flow of the first precursor, the flow of the second precursor and/or the flow of the purge gas based on the parameter sensed by the monitoring system in real-time during a deposition cycle of a workpiece.

摘要翻译： 用于将材料沉积到微器件工件上的装置包括构造成提供第一前体，第二前体和吹扫气体的气体源系统。 该装置还可以包括联接到气源系统的阀组件。 阀组件被配置为控制第一前体的流动，第二前体的流动和净化气体的流动。 该装置的另一部件是反应室，其包括联接到阀组件的入口，反应室中的工件保持器和工件保持器下游的出口。 该装置还包括监视系统和控制器。 监测系统包括将选定的辐射引导通过反应室的辐射源和感测通过反应室引导的辐射的参数的检测器。 控制器可操作地耦合到监视系统和阀组件。 控制器包含计算机可操作的指令，以在工件的沉积循环期间实时地基于由监测系统感测的参数终止第一前体的流动，第二前体的流动和/或吹扫气体的流动 。

公开(公告)号：US06858264B2

公开(公告)日：2005-02-22

申请号：US10132003

申请日：2002-04-24

申请人： Ross S. Dando ,  Philip H. Campbell ,  Craig M. Carpenter ,  Allen P. Mardian

发明人： Ross S. Dando ,  Philip H. Campbell ,  Craig M. Carpenter ,  Allen P. Mardian

IPC分类号： C23C16/44 ,  C23C16/56

CPC分类号： C23C16/4405 ,  C23C16/4412

摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.

摘要翻译： 化学气相沉积室具有从其延伸的真空排气管。 在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。 真空排气管线的至少一部分与沉积室隔离。 在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。 在所述流动之后，真空排气管线和沉积室的部分设置成彼此流体连通，并且在有效地将流出物产物沉积在真空内壁上的条件下，在沉积室内的第二多个基板上沉积材料 排气管路。

公开(公告)号：US06800172B2

公开(公告)日：2004-10-05

申请号：US10082599

申请日：2002-02-22

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

IPC分类号： C23F100

CPC分类号： H01L21/67126 ,  C23C16/4409 ,  C23C16/54 ,  Y10S414/139

摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。

公开(公告)号：US06787373B2

公开(公告)日：2004-09-07

申请号：US10396268

申请日：2003-03-24

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

IPC分类号： H01L2100

CPC分类号： C23C16/4401 ,  C23C16/54 ,  Y10S414/137

摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.

摘要翻译： 本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。 本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。 至少该夹具安装到身体的远端部分。 接合器的尺寸适合于通过身体的所述通道移动。 接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。 本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。 本发明包括在多个半导体衬底上沉积材料的方法。 考虑其他实现。

公开(公告)号：US06838114B2

公开(公告)日：2005-01-04

申请号：US10155547

申请日：2002-05-24

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/52

摘要： Methods for depositing materials onto micro-device workpieces in a reaction chamber. One embodiment of such a method comprises providing a flow of a first precursor through the reaction chamber to deposit the first precursor onto the micro-device workpiece in the reaction chamber, and providing a flow of a purge gas through the reaction chamber to purge excess amounts of the first precursor. The method continues by monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas in the reaction chamber as the first precursor and/or the purge gas flows through the reaction chamber. An additional aspect of this method is terminating the flow of the first precursor and/or the flow of the purge gas based on the monitored parameter of the quantity of the first precursor and/or the purge gas. The procedure of monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas can comprise determining a concentration of the first precursor and/or the purge gas in the reaction chamber using a selected radiation.

摘要翻译： 在反应室中将材料沉积到微器件工件上的方法。 这种方法的一个实施方案包括提供通过反应室的第一前体的流动，以将第一前体沉积在反应室中的微器件工件上，并且提供净化气体流过反应室以净化过量 的第一个前体。 当第一前体和/或吹扫气体流过反应室时，通过监测与反应室中的第一前体和/或吹扫气体的量相关的参数来继续该方法。 该方法的另一方面是基于所监测的第一前体和/或吹扫气体的量的参数来终止第一前体和/或吹扫气体的流动。 监测与第一前体和/或吹扫气体的量相关的参数的程序可以包括使用所选择的辐射确定反应室中的第一前体和/或吹扫气体的浓度。

公开(公告)号：US06821347B2

公开(公告)日：2004-11-23

申请号：US10191889

申请日：2002-07-08

申请人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

发明人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

IPC分类号： B05C318

CPC分类号： C23C16/45544 ,  C23C16/45565

摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

公开(公告)号：US06797337B2

公开(公告)日：2004-09-28

申请号：US10223175

申请日：2002-08-19

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

IPC分类号： B05D300

CPC分类号： C23C16/4481

摘要： A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its surface such that substantially no thermal decomposition of the remaining precursor occurs. The energy source may include a carrier gas, a radio frequency coupling device, or an infrared irradiation source. After the precursor is exposed to the energy source, the vaporized portion of the precursor is transported via a temperature-controlled conduit to a chemical vapor deposition or atomic deposition chamber for further processing.

摘要翻译： 提供了用于将前体输送到化学气相沉积或原子层沉积室的方法和装置。 该装置包括含有前体的温度控制容器。 使用能源在其表面蒸发前体，使得基本上不会发生剩余前体的热分解。 能量源可以包括载气，射频耦合装置或红外辐射源。 在前体暴露于能量源之后，前体的蒸发部分通过温度控制的导管输送到化学气相沉积或原子沉积室，用于进一步处理。

公开(公告)号：US07234412B2

公开(公告)日：2007-06-26

申请号：US10350554

申请日：2003-01-23

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

IPC分类号： C23C16/00

CPC分类号： C23C16/54 ,  C23C16/4401

摘要： A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A replacement for the removed deposition chamber liner piece is provided into the chamber by passing the replacement through said passageway. A liner apparatus includes a plurality of pieces which when assembled within a selected semiconductor substrate deposition processor chamber are configured to restrict at least a majority portion of all internal wall surfaces which define said semiconductor substrate deposition processor chamber from exposure to deposition material within the chamber. At least some of the pieces are sized for passing completely through a substrate passageway to the chamber through which semiconductor substrates pass into and out of the chamber for deposition processing.

摘要翻译： 一种方法包括通过将沉积室衬套通过通道传送到沉积室，通过半导体衬底通过其进入和离开室进行沉积处理，从沉积室去除至少一块沉积室衬里。 通过使替换通过所述通道，将移除的沉积室衬垫件的替代物提供到腔室中。 衬套装置包括多个片段，当组装在所选择的半导体衬底沉积处理器室中时，其被限定为限定所述半导体衬底沉积处理器室的所有内壁表面的至少大部分部分暴露于腔室内的沉积材料。 至少一些片的尺寸被设计成完全通过衬底通道到半导体衬底通过其进入和离开室以进行沉积处理的室。

公开(公告)号：US07185601B2

公开(公告)日：2007-03-06

申请号：US09798672

申请日：2001-03-01

申请人： Craig M. Carpenter ,  Allen P. Mardian ,  Philip H. Campbell ,  Ross S. Dando

发明人： Craig M. Carpenter ,  Allen P. Mardian ,  Philip H. Campbell ,  Ross S. Dando

IPC分类号： G01N31/22

CPC分类号： G01N21/78 ,  G01N21/293 ,  Y10S116/14

摘要： A chemically sensitive warning apparatus capable of changing colors upon contact with a chemical is disclosed. The apparatus preferably comprises an elongated tape having opposed, first and second major surfaces and warning indicia visible to an individual viewing the first surface to provide visual indication of possible danger or hazardous condition. Mounted to the tape is at least one chemical indicator that is responsive to the presence of at least one chemical by changing colors so as to provide a visual indication of the exposure of the indicator to the chemical. The tape may also include at least one color reference indicia to facilitate interpretation of the color of the chemical indicator when the chemical indicator changes color upon exposure to the chemical.

摘要翻译： 公开了能够在与化学品接触时改变颜色的化学敏感警报装置。 该装置优选地包括具有相对的第一和第二主表面的细长带，并且警告标记对于观看第一表面的个体可见以提供可能的危险或危险状况的视觉指示。 安装到胶带上的是至少一种化学指示剂，其通过改变颜色来响应至少一种化学品的存在，从而提供指示剂暴露于化学品的视觉指示。 当化学品指示剂在暴露于化学品时变色时，胶带还可以包括至少一个颜色参考标记，以便于解释化学指示剂的颜色。

公开(公告)号：US07118783B2

公开(公告)日：2006-10-10

申请号：US10183250

申请日：2002-06-26

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Dan Gealy ,  Garo J. Derderian ,  Allen P. Mardian

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Dan Gealy ,  Garo J. Derderian ,  Allen P. Mardian

IPC分类号： C23C16/02

CPC分类号： C23C16/4481

摘要： CVD, ALD, and other vapor processes used in processing semiconductor workpieces often require volatilizing a liquid or solid precursor. Certain embodiments of the invention provide improved and/or more consistent volatilization rates by moving a reaction vessel. In one exemplary embodiment, a reaction vessel is rotated about a rotation axis which is disposed at an angle with respect to vertical. This deposits a quantity of the reaction precursor on an interior surface of the vessel's sidewall which is exposed to the headspace as the vessel rotates. Other embodiments employ drivers adapted to move the reaction vessel in other manners, such as a pendulum arm to oscillate the vessel along an arcuate path or a mechanical linkage which moves the vessel along an elliptical path.

摘要翻译： 用于处理半导体工件中的CVD，ALD和其它蒸气方法通常需要挥发液体或固体前体。 本发明的某些实施方案通过移动反应容器提供改进的和/或更一致的挥发速率。 在一个示例性实施例中，反应容器围绕相对于垂直方向以一定角度设置的旋转轴线旋转。 这将一定数量的反应前体沉积在容器侧壁的内表面上，该容器的侧壁在容器旋转时暴露于顶部空间。 其他实施例使用适于以其他方式移动反应容器的驱动器，例如摆臂，以沿着沿着椭圆形路径移动容器的弓形路径或机械连杆摆动容器。