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发明授权
US06841274B2 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same 有权
GaN单晶衬底，氮化物型半导体外延衬底，氮化物型半导体器件及其制造方法

GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
摘要：
The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.
摘要（中）：

根据本发明的GaN单晶衬底11在至少含有NH 3气体的混合气体气氛中，在至少1020℃的衬底温度下进行至少10分钟的抛光表面。 结果，在通过研磨形成大量微小缺陷的基板11的表面中进行原子重排，从而使基板11的表面变平。因此，形成外延层12的表面 可以使基板11平坦化。

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