公开(公告)号：US06841274B2

公开(公告)日：2005-01-11

申请号：US10431431

申请日：2003-05-08

申请人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

发明人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  B32B9/04

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L21/3247

摘要： The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.

摘要翻译： 根据本发明的GaN单晶衬底11在至少含有NH 3气体的混合气体气氛中，在至少1020℃的衬底温度下进行至少10分钟的抛光表面。 结果，在通过研磨形成大量微小缺陷的基板11的表面中进行原子重排，从而使基板11的表面变平。因此，形成外延层12的表面 可以使基板11平坦化。

公开(公告)号：US20100173483A1

公开(公告)日：2010-07-08

申请号：US12725233

申请日：2010-03-16

申请人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

发明人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L21/3247

摘要： The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.

摘要翻译： 根据本发明的GaN单晶衬底11在至少含有NH 3气体的混合气体气氛中，在至少1020℃的衬底温度下进行至少10分钟的抛光表面。 结果，在通过研磨形成大量微小缺陷的基板11的表面中进行原子重排，从而使基板11的表面变平。因此，形成外延层12的表面 可以使基板11平坦化。

公开(公告)号：US20050095861A1

公开(公告)日：2005-05-05

申请号：US10997887

申请日：2004-11-29

申请人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

发明人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L21/3247

摘要： The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.

摘要翻译： 根据本发明的GaN单晶衬底11，在至少含有NH 3的混合气体气氛中，在至少1020℃的衬底温度下，经过热处理至少10分钟的抛光表面， 3气体。 结果，在通过研磨形成大量微小缺陷的基板11的表面中进行原子重排，从而使基板11的表面变平。因此，形成外延层12的表面 可以使基板11平坦化。

公开(公告)号：US20090302308A1

公开(公告)日：2009-12-10

申请号：US12442180

申请日：2006-09-22

申请人： Soo-Jin Chua ,  Peng Chen ,  Zhen Chen ,  Eiryo Takasuka

发明人： Soo-Jin Chua ,  Peng Chen ,  Zhen Chen ,  Eiryo Takasuka

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L33/305 ,  H01L33/32 ,  H01S5/3412 ,  H01S5/34333

摘要： A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x

摘要翻译： 白色发光二极管包括n型半导体层，在n型半导体层上形成的一个或多个量子阱结构，形成在量子阱结构上的p型半导体层，形成在p型半导体层上的第一电极， 和形成在n型半导体层的至少一部分上的第二电极。 每个量子阱结构包括In x Ga 1-x N量子阱层，In y Ga 1-y N势垒层（x> 0.3或x = 0.3）和In x Ga 1-z N量子点，其中x

公开(公告)号：US20090206320A1

公开(公告)日：2009-08-20

申请号：US11909613

申请日：2005-03-24

申请人： Soo Jin Chua ,  Peng Chen ,  Eiryo Takasuka

发明人： Soo Jin Chua ,  Peng Chen ,  Eiryo Takasuka

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

摘要： A white light-emitting diode is fabricated by metal organic chemical vapor deposition (MOCVD), which can produce a broad band emission covering all the visible range in the spectrum by capping the Indium nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots (QDs) in single or multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) by introducing bursts of at least one of Timethylindium (TMIn), Triethylindium (TEIn) and Ethyldimethylindium (EDMIn), which serve as nuclei for the growth of QDs in QWs. The diode can thus radiate white light ranging from 400 nm to 750 nm by adjusting the In burst parameters.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）制造白色发光二极管，其可以通过封装氮化铟（InN）和富铟铟铟氮化物（InGaN）来产生覆盖光谱中所有可见光范围的宽带发射 ）量子点（QD），通过引入作为核的核苷酸的至少一种Timethylindium（TMIn），Triethylindium（TEIn）和EthylDimethylindium（EDMIn））的突发，在单个或多个In x Ga 1-x N / In y Ga 1-y N量子阱（QW） 质量保证体系的数量增长。 因此，二极管可以通过调整In突发参数来辐射范围从400nm到750nm的白光。

公开(公告)号：US08120012B2

公开(公告)日：2012-02-21

申请号：US12442180

申请日：2006-09-22

申请人： Soo-Jin Chua ,  Peng Chen ,  Zhen Chen ,  Eiryo Takasuka

发明人： Soo-Jin Chua ,  Peng Chen ,  Zhen Chen ,  Eiryo Takasuka

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L33/305 ,  H01L33/32 ,  H01S5/3412 ,  H01S5/34333

摘要： A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x

摘要翻译： 白色发光二极管包括n型半导体层，在n型半导体层上形成的一个或多个量子阱结构，形成在量子阱结构上的p型半导体层，形成在p型半导体层上的第一电极， 和形成在n型半导体层的至少一部分上的第二电极。 每个量子阱结构包括In x Ga 1-x N量子阱层，In y Ga 1-y N势垒层（x> 0.3或x = 0.3）和In x Ga 1-z N量子点，其中x

公开(公告)号：US20080318003A1

公开(公告)日：2008-12-25

申请号：US11574470

申请日：2004-08-31

申请人： Soo Jin Chua ,  Peng Chen ,  Yadong Wang

发明人： Soo Jin Chua ,  Peng Chen ,  Yadong Wang

IPC分类号： B32B5/00 ,  B05D5/12 ,  H01L21/20 ,  C23F1/00

CPC分类号： H01L29/127 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02603 ,  H01L21/02639 ,  H01L29/2003 ,  Y10T428/24355

摘要： A method for fabricating nano-structures comprising providing a substrate for the growth of the nano-structures; providing a template having predetermined nano-patterns; providing at least one layer of mask material between the template and the substrate; transferring the nano-patterns from the template to the layer of mask material; and growing the nano-structures on the substrate in areas exposed through the nano-patterns in the layer of mask material by a bottom-up growth process.

摘要翻译： 一种制造纳米结构的方法，包括提供用于纳米结构生长的衬底; 提供具有预定纳米图案的模板; 在模板和衬底之间提供至少一层掩模材料; 将纳米图案从模板转移到掩模材料层; 以及通过自底向上生长过程在掩模材料层中通过纳米图案暴露的区域在衬底上生长纳米结构。

公开(公告)号：US07910937B2

公开(公告)日：2011-03-22

申请号：US11344472

申请日：2006-02-01

申请人： Peng Chen ,  Soo Jin Chua ,  Zhonglin Miao ,  Sudhiranjan Tripathy

发明人： Peng Chen ,  Soo Jin Chua ,  Zhonglin Miao ,  Sudhiranjan Tripathy

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/04

摘要： A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.

摘要翻译： 用于在硅衬底上制造III-V族氮化物层的方法和结构包括衬底，具有AlGaN，AlN和GaN层的过渡结构，以及具有AlGaN和GaN层的超晶格结构。 在本发明中，通过使用AlN作为第一缓冲层，在AlN（0001）和Si（111）晶格之间具有5:4的一致性来解决GaN和硅之间的大晶格失配（17％），以将晶格失配减小到1.3 ％。

公开(公告)号：US10077189B2

公开(公告)日：2018-09-18

申请号：US13577223

申请日：2011-02-07

申请人： Jianwen Zhao ,  Lain-Jong Li ,  Peng Chen ,  Bee Eng Mary Chan

发明人： Jianwen Zhao ,  Lain-Jong Li ,  Peng Chen ,  Bee Eng Mary Chan

IPC分类号： H01L51/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/05 ,  C09D7/62 ,  C08K3/04 ,  C08K9/02

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08K3/04 ,  C08K9/02 ,  C09D7/62 ,  H01L51/0049 ,  H01L51/0558

摘要： Various embodiments relate to a method of modifying the electrical properties of carbon nanotubes. The method may include providing a substrate having carbon nanotubes deposited on a surface of the substrate, and depositing on the carbon nanotubes a coating layer comprising a mixture of nanoparticles, a matrix in which the nanoparticles are dissolved or stabilized, and an ionic liquid. A field-effect transistor including the modified carbon nanotubes is also provided.

公开(公告)号：US09998258B2

公开(公告)日：2018-06-12

申请号：US13257113

申请日：2009-03-18

申请人： Esa Tapani Tiirola ,  Kari Pekka Pajukoski ,  Kari Juhani Hooli ,  Peng Chen ,  Chun Yan Gao

发明人： Esa Tapani Tiirola ,  Kari Pekka Pajukoski ,  Kari Juhani Hooli ,  Peng Chen ,  Chun Yan Gao

IPC分类号： H04W4/00 ,  H04L1/16 ,  H04L1/18 ,  H04L5/00 ,  G08C17/00 ,  H04B7/208 ,  H04W72/00 ,  H04B1/38 ,  H04M1/00

CPC分类号： H04L1/16 ,  H04L1/18 ,  H04L1/1829 ,  H04L5/0053

摘要： A method of transmitting uplink control signals/status bits from a user equipment, said user equipment having multiple transmit antennae, and said control signals correspond to a plurality of previous downlink transmissions, wherein said control signals are transmitted over a plurality of PUCCH resources and over said multiple antennae, and transmitted during a single uplink sub-frame. Use of multiple PUCCH resources and multiple antennae allow greater spatial diversity.