公开(公告)号：US06841274B2

公开(公告)日：2005-01-11

申请号：US10431431

申请日：2003-05-08

申请人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

发明人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  B32B9/04

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L21/3247

摘要： The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.

摘要翻译： 根据本发明的GaN单晶衬底11在至少含有NH 3气体的混合气体气氛中，在至少1020℃的衬底温度下进行至少10分钟的抛光表面。 结果，在通过研磨形成大量微小缺陷的基板11的表面中进行原子重排，从而使基板11的表面变平。因此，形成外延层12的表面 可以使基板11平坦化。

公开(公告)号：US20100173483A1

公开(公告)日：2010-07-08

申请号：US12725233

申请日：2010-03-16

申请人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

发明人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L21/3247

摘要： The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.

摘要翻译： 根据本发明的GaN单晶衬底11在至少含有NH 3气体的混合气体气氛中，在至少1020℃的衬底温度下进行至少10分钟的抛光表面。 结果，在通过研磨形成大量微小缺陷的基板11的表面中进行原子重排，从而使基板11的表面变平。因此，形成外延层12的表面 可以使基板11平坦化。

公开(公告)号：US20050095861A1

公开(公告)日：2005-05-05

申请号：US10997887

申请日：2004-11-29

申请人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

发明人： Masaki Ueno ,  Eiryo Takasuka ,  Soo-Jin Chua ,  Peng Chen

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L21/3247

摘要： The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.

摘要翻译： 根据本发明的GaN单晶衬底11，在至少含有NH 3的混合气体气氛中，在至少1020℃的衬底温度下，经过热处理至少10分钟的抛光表面， 3气体。 结果，在通过研磨形成大量微小缺陷的基板11的表面中进行原子重排，从而使基板11的表面变平。因此，形成外延层12的表面 可以使基板11平坦化。

公开(公告)号：US20090126635A1

公开(公告)日：2009-05-21

申请号：US12270867

申请日：2008-11-14

申请人： Masaki Ueno ,  Eiryo Takasuka

发明人： Masaki Ueno ,  Eiryo Takasuka

IPC分类号： B05C9/14

CPC分类号： C23C16/45585 ,  C23C16/303 ,  C23C16/45504 ,  C30B25/08

摘要： Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor (1) is furnished with a susceptor (5) and a duct (11). The susceptor (5) has a carrying surface for heating and carrying substrates (20). The duct (11) is for conducting reaction gas (G) to the substrates (20). The susceptor (5) is rotatable with the carrying surface fronting on the duct (11) interior. The duct (11) has channels (11b) and (11c), which merge on the duct end upstream of Point A4. The height of the duct (11) running along the reaction gas (G) flow direction monotonically diminishes heading toward the duct downstream end from Point P1 to Point P2, stays constant from Point P2 to Point P3, and monotonically diminishes heading downstream from Point P3. Point P1 lies upstream of Point A4, while Point P3 lies on the susceptor (5).

摘要翻译： 提供MOCVD反应器，尽管沉积膜的厚度均匀化，但是可以提高膜沉积效率。 MOCVD反应器（1）配备有基座（5）和导管（11）。 基座（5）具有用于加热和承载基板（20）的承载表面。 管道（11）用于将反应气体（G）传导到基板（20）。 基座（5）能够随着在导管（11）内部的承载表面旋转。 管道（11）具有通道（11b）和（11c），其在点A4上游的管道端部合并。 沿着反应气体（G）流动方向运行的管道（11）的高度单调地减小从点P1到点P2的管道下游端的朝向，从点P2到点P3保持恒定，并且单调地减小从点P3的下游 。 点P1位于点A4的上游，而点P3位于基座（5）上。

公开(公告)号：US08628616B2

公开(公告)日：2014-01-14

申请号：US12330904

申请日：2008-12-09

申请人： Eiryo Takasuka ,  Toshio Ueda ,  Toshiyuki Kuramoto ,  Masaki Ueno

发明人： Eiryo Takasuka ,  Toshio Ueda ,  Toshiyuki Kuramoto ,  Masaki Ueno

IPC分类号： C23C16/455 ,  C23C16/00 ,  H01L21/306

CPC分类号： C23C16/455 ,  C23C16/4401 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/45565 ,  C30B25/165 ,  C30B29/403 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  Y10T428/31504

摘要： A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

摘要翻译： 获得即使进行不同类型的处理也能够令人满意地保持处理质量的气相处理装置和气相处理方法。 气相处理装置包括处理室，用作多个气体导入部的气体供给口，以及气体供给部（气体供给部件，管道，流量控制装置，管道，缓冲室 ）。 处理室允许反应气体在其中流动。 多个气体供给口沿着反应气体的流动方向形成在处理室的壁面（上壁）中。 气体供给部能够以与多个气体供给口中的一个气体供给口不同的一个气体供给口和另一个气体供给口中的每一个以不同的流量向处理室供给气体。

公开(公告)号：US20090197399A1

公开(公告)日：2009-08-06

申请号：US12363020

申请日：2009-01-30

申请人： Takao Nakamura ,  Masaki Ueno ,  Toshio Ueda ,  Eiryo Takasuka ,  Yasuhiko Senda

发明人： Takao Nakamura ,  Masaki Ueno ,  Toshio Ueda ,  Eiryo Takasuka ,  Yasuhiko Senda

IPC分类号： H01L21/36

CPC分类号： H01L21/0254 ,  H01L21/0262

摘要： Provided are a method of growing a group III-V compound semiconductor, and method of manufacturing a light-emitting device and an electron device, in which risks are reduced and nitrogen can be efficiently supplied at low temperatures.The method of growing a group III-V compound semiconductor includes the following processes. First, gas containing at least one selected from the group consisting of monomethylamine and monoethylamine is prepared as a nitrogen raw material. Then, the group III-V compound semiconductor is grown using the gas by vapor phase growth.

摘要翻译： 提供了生长III-V族化合物半导体的方法，以及制造发光器件和电子器件的方法，其中风险降低，并且可以在低温下有效地提供氮。 生长III-V族化合物半导体的方法包括以下步骤。 首先，制备含有选自由一甲胺和一乙胺组成的组中的至少一种的气体作为氮原料。 然后，通过气相生长，使用气体生长III-V族化合物半导体。

公开(公告)号：US20080006208A1

公开(公告)日：2008-01-10

申请号：US11822188

申请日：2007-07-03

申请人： Masaki Ueno ,  Toshio Ueda ,  Eiryo Takasuka

发明人： Masaki Ueno ,  Toshio Ueda ,  Eiryo Takasuka

IPC分类号： C23C16/458

CPC分类号： C23C16/45585 ,  C23C16/303 ,  C23C16/45504 ,  C30B25/165 ,  C30B35/00

摘要： Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

摘要翻译： 金属有机化学气相沉积设备是通过使用反应气体在衬底上形成膜的金属有机化学气相沉积设备，并且包括加热衬底并具有用于保持衬底的保持表面的基座，以及用于引入 反应气体到基底。 基座可旋转，保持面保持面向流动通道的内部，流动通道沿着反应气体的流动方向的高度从位置保持恒定，并且从位置单调减小 到下游。 从而可以提高成膜效率，同时允许成形膜具有均匀的厚度。

公开(公告)号：US08920565B2

公开(公告)日：2014-12-30

申请号：US12270867

申请日：2008-11-14

申请人： Masaki Ueno ,  Eiryo Takasuka

发明人： Masaki Ueno ,  Eiryo Takasuka

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C30B25/08 ,  C23C16/30

CPC分类号： C23C16/45585 ,  C23C16/303 ,  C23C16/45504 ,  C30B25/08

摘要： Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor (1) is furnished with a susceptor (5) and a duct (11). The susceptor (5) has a carrying surface for heating and carrying substrates (20). The duct (11) is for conducting reaction gas (G) to the substrates (20). The susceptor (5) is rotatable with the carrying surface fronting on the duct (11) interior. The duct (11) has channels (11b) and (11c), which merge on the duct end upstream of Point A4. The height of the duct (11) running along the reaction gas (G) flow direction monotonically diminishes heading toward the duct downstream end from Point P1 to Point P2, stays constant from Point P2 to Point P3, and monotonically diminishes heading downstream from Point P3. Point P1 lies upstream of Point A4, while Point P3 lies on the susceptor (5).

摘要翻译： 提供MOCVD反应器，尽管沉积膜的厚度均匀化，但是可以提高膜沉积效率。 MOCVD反应器（1）配备有基座（5）和导管（11）。 基座（5）具有用于加热和承载基板（20）的承载表面。 管道（11）用于将反应气体（G）传导到基板（20）。 基座（5）能够随着在导管（11）内部的承载表面旋转。 管道（11）具有通道（11b）和（11c），其在点A4上游的管道端部合并。 沿着反应气体（G）流动方向运行的管道（11）的高度单调地减小从点P1到点P2的管道下游端的朝向，从点P2到点P3保持恒定，并且单调地减小从点P3的下游 。 点P1位于点A4的上游，而点P3位于基座（5）上。

公开(公告)号：US20110198566A1

公开(公告)日：2011-08-18

申请号：US13124612

申请日：2010-01-27

申请人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura ,  Toshio Ueda ,  Eiryo Takasuka ,  Yasuhiko Senda

发明人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura ,  Toshio Ueda ,  Eiryo Takasuka ,  Yasuhiko Senda

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L21/0254 ,  B82Y20/00 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01S5/34333 ,  H01S2304/04

摘要： A method for manufacturing a light emitting element is directed to a method for manufacturing a light emitting element of a III-V group compound semiconductor having a quantum well structure including In and N, including the steps of: forming a well layer including In and N; forming a barrier layer having a bandgap wider than a bandgap of the well layer; and supplying a gas including N and interrupting epitaxial growth after the step of forming the well layer and before the step of forming the barrier layer. In the step of interrupting epitaxial growth, the gas having decomposition efficiency higher than decomposition efficiency of decomposition from N2 and NH3 into active nitrogen at 900° C. is supplied. In addition, in the step of interrupting epitaxial growth, the gas different from a gas used as an N source of the well layer is supplied.

摘要翻译： 制造发光元件的方法涉及具有包括In和N的量子阱结构的III-V族化合物半导体的发光元件的制造方法，包括以下步骤：形成包括In和N的阱层 ; 形成具有比所述阱层的带隙宽的带隙的阻挡层; 以及在形成阱层的步骤之后和在形成阻挡层的步骤之前，提供包括N的气体并中断外延生长。 在中断外延生长的步骤中，提供分解效率高于在900℃从N2和NH3分解成活性氮的分解效率的气体。 此外，在中断外延生长的步骤中，供给与用作阱层的N源的气体不同的气体。

公开(公告)号：US20090148704A1

公开(公告)日：2009-06-11

申请号：US12330904

申请日：2008-12-09

申请人： Eiryo TAKASUKA ,  Toshio Ueda ,  Toshiyuki Kuramoto ,  Masaki Ueno

发明人： Eiryo TAKASUKA ,  Toshio Ueda ,  Toshiyuki Kuramoto ,  Masaki Ueno

IPC分类号： B32B9/04 ,  C23C16/455 ,  C23C16/06 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/4401 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/45565 ,  C30B25/165 ,  C30B29/403 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  Y10T428/31504

摘要： A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

摘要翻译： 获得即使进行不同类型的处理也能够令人满意地保持处理质量的气相处理装置和气相处理方法。 气相处理装置包括处理室，用作多个气体导入部的气体供给口，以及气体供给部（气体供给部件，管道，流量控制装置，管道，缓冲室 ）。 处理室允许反应气体在其中流动。 多个气体供给口沿着反应气体的流动方向形成在处理室的壁面（上壁）中。 气体供给部能够以与多个气体供给口中的一个气体供给口不同的一个气体供给口和另一个气体供给口中的每一个以不同的流量向处理室供给气体。