发明授权
- 专利标题： Method and apparatus for growing high quality single crystal
- 专利标题（中）： 生长高品质单晶的方法和装置
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申请号： US09979505申请日： 2000-05-22
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公开(公告)号： US06843849B1公开(公告)日： 2005-01-18
- 发明人: Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura
- 申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura
- 申请人地址： JP Saitama
- 专利权人： Japan Science and Technology Corporation
- 当前专利权人： Japan Science and Technology Corporation
- 当前专利权人地址： JP Saitama
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP11-178815 19990522
- 国际申请： PCTJP00/03264 WO 20000522
- 国际公布： WO0071786 WO 20001130
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B15/30 ; C30B17/00 ; C30B29/22 ; C30B29/30
摘要：
In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.
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