公开(公告)号：US20080283968A1

公开(公告)日：2008-11-20

申请号：US11579645

申请日：2005-03-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： H01L29/20 ,  C03B9/00

CPC分类号： C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

摘要翻译： 一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质 提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。 因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

公开(公告)号：US20080022921A1

公开(公告)日：2008-01-31

申请号：US11628253

申请日：2005-04-15

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： C30B29/38 ,  C30B11/06 ,  C30B9/10 ,  H01L33/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

公开(公告)号：US07247203B2

公开(公告)日：2007-07-24

申请号：US10525809

申请日：2003-08-25

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

IPC分类号： C30B29/54

CPC分类号： C30B7/00 ,  C30B29/58 ,  Y10S117/904

摘要： The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10. A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.

摘要翻译： 本发明涉及容易高效地生产蛋白质或有机物质的优质晶体的方法。 制备蛋白质或有机物质的溶液，然后缓慢冷却至低饱和度。 用飞秒激光10照射该过饱和溶液。 在激光的焦点发生局部爆炸现象，从而产生晶核。 当晶体长时间在晶核上生长时，获得高质量的晶体。 本文使用的飞秒激光可以是波长为800nm，持续时间为120fs，频率为1kHz，输出为400mW的钛：蓝宝石激光。

公开(公告)号：US07006539B1

公开(公告)日：2006-02-28

申请号：US09762100

申请日：1999-08-04

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： H01S3/10

CPC分类号： G02F1/3551

摘要： There is provided a nonlinear optical crystal which is presented by the formula: K2Al2B2O7. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of high practical use. There are also provided a wavelength conversion method using this crystal, and an element and a wavelength conversion apparatus for use in the method.

摘要翻译： 提供了一种非线性光学晶体，其由下列公式表示：K 2 2 Al 2 B 2 N 2 O 7 。 这种非线性光学晶体是一种容易生长和高实用性的真空紫外线发生非线性光学晶体。 还提供了使用该晶体的波长转换方法以及用于该方法的元件和波长转换装置。

公开(公告)号：US06843849B1

公开(公告)日：2005-01-18

申请号：US09979505

申请日：2000-05-22

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B17/00 ,  C30B29/22 ,  C30B29/30

CPC分类号： C30B15/00 ,  C30B15/305 ,  C30B17/00 ,  C30B29/10 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068

摘要： In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.

摘要翻译： 在通过使晶种（4）与在坩埚（1）中加热熔融的原料熔体（2）接触的方法中，在设置在坩埚（1）中的叶片构件（5）或挡板构件 坩埚（1）中的原料熔融物（2）和通过使坩埚（1）旋转而拉起来生长单晶，从而以高品质从高粘度原料熔体（2）生长包括CLBO的各种单晶 和高性能晶体。

公开(公告)号：US07288151B2

公开(公告)日：2007-10-30

申请号：US10999338

申请日：2004-11-29

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

IPC分类号： C30B11/14

CPC分类号： C30B29/403 ,  C30B11/00 ,  C30B11/04 ,  C30B29/406

摘要： There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

摘要翻译： 提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。 此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中 熔体的表面和基板的表面设定为至多50mm。

公开(公告)号：US07948673B2

公开(公告)日：2011-05-24

申请号：US12233174

申请日：2008-09-18

申请人： Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

发明人： Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

IPC分类号： G02F1/35 ,  H01S3/10

CPC分类号： G02F1/37 ,  G02F1/3551 ,  G02F2001/3505 ,  G02F2001/354

摘要： An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm−1 in an infrared transmission spectrum of the optical element is used as an index that indicates a content of water impurities in the crystal and is independent of a polarization direction. An actual measurement of the transmittance Ta is at least 1%, without taking into account loss at an optically polished surface of the crystal. A wavelength conversion device, a ultraviolet laser irradiation apparatus, a laser processing system, and a method of manufacturing an optical wavelength conversion element are also described.

摘要翻译： 光波长转换元件包括加工成允许产生Nd：YAG激光器的四次谐波的取向切割的10mm长的光学元件的铯 - 硼酸锂晶体。 光学元件的红外透射光谱中的3589cm -1处的透射率（Ta）被用作指示晶体中的水杂质含量并且与偏振方向无关的指标。 透射率Ta的实际测量值至少为1％，而不考虑在晶体的光学抛光表面处的损耗。 还描述了波长转换装置，紫外激光照射装置，激光加工系统和制造光波长转换元件的方法。

公开(公告)号：US07744696B2

公开(公告)日：2010-06-29

申请号：US10545314

申请日：2004-02-13

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Muneyuki Nishioka ,  Satoru Fukumoto ,  Tomoyo Matsui ,  Takashi Saji

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Muneyuki Nishioka ,  Satoru Fukumoto ,  Tomoyo Matsui ,  Takashi Saji

IPC分类号： C30B11/00

CPC分类号： C30B35/007 ,  C01B35/12 ,  C30B11/02 ,  C30B29/22

摘要： A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.

摘要翻译： 具有优异的均匀性和可靠性的硼酸盐基结晶，其可用作光波长转换装置等，并且可以在短时间内以低成本容易地制备，通过将水溶性原料溶解在 水以制备水溶液，在水溶液中蒸发水，然后烧结或蒸发水而不烧结，从而形成晶体生长材料，并熔化所得材料以生长晶体。 此外，通过使用该晶体作为光学波长转换装置，可以实现高可靠性的激光振荡装置。

公开(公告)号：US20100059717A1

公开(公告)日：2010-03-11

申请号：US12514836

申请日：2007-11-14

申请人： Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

发明人： Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

IPC分类号： C30B9/00 ,  C01B21/06 ,  H01B1/24

CPC分类号： C30B29/406 ,  C30B19/02 ,  Y10T117/1024

摘要： A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.

摘要翻译： 提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。 本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序 互相反应。 根据本发明的制造方法，能够防止成核，如图1所示， 如图4所示，可以生长非极性表面。

公开(公告)号：US07507292B2

公开(公告)日：2009-03-24

申请号：US10522488

申请日：2003-06-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

IPC分类号： C30B11/06

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B9/12 ,  C30B29/403

摘要： A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

摘要翻译： 一种III族元素氮化物单晶的制造方法，其特征在于，在混合助熔剂中使至少一种选自镓（Ga），铝（Al）和铟（In）的III族元素与氮（N） 的钠（Na）和至少一种碱金属（除了Na）和碱土金属之外。 该方法允许以良好的产率生产透明的III族元素氮化物的单晶，其位错密度降低，具有散装形式，并且大。 特别地，通过该方法制造的氮化镓单晶具有高质量并且具有大而透明的散装形式，因此具有很高的实用价值。