发明授权
- 专利标题: Magnetic random access memory
- 专利标题(中): 磁性随机存取存储器
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申请号: US10796061申请日: 2004-03-10
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公开(公告)号: US06844204B2公开(公告)日: 2005-01-18
- 发明人: Yoshiaki Asao
- 申请人: Yoshiaki Asao
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2002-301940 20021016
- 主分类号: G11C11/15
- IPC分类号: G11C11/15 ; G11C11/00 ; H01L21/00 ; H01L21/8246 ; H01L27/105 ; H01L27/22 ; H01L29/76 ; H01L29/78 ; H01L31/062 ; H01L31/119 ; H01L43/08
摘要:
A data selection line (write line) is disposed right on a MTJ element. Upper and side surfaces of the data selection line are coated with yoke materials which have a high permeability. The yoke materials are separated from each other by a barrier layer. Similarly, a write word line is disposed right under the MTJ element. The lower and side surfaces of the write word line are also coated with the yoke materials which have the high permeability. The yoke materials on the lower and side surfaces of the write word line are also separated from each other by the barrier layer.
公开/授权文献
- US20040217400A1 MAGNETIC RANDOM ACCESS MEMORY 公开/授权日:2004-11-04