发明授权
- 专利标题： Metal film semiconductor device and a method for forming the same
- 专利标题（中）： 金属膜半导体器件及其形成方法
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申请号： US10367916申请日： 2003-02-19
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公开(公告)号： US06844627B2公开(公告)日： 2005-01-18
- 发明人: Jong-Myeong Lee , In-Sun Park , Jong-Sik Chun
- 申请人： Jong-Myeong Lee , In-Sun Park , Jong-Sik Chun
- 申请人地址： KR Suwon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon
- 代理机构： Harness Dickey
- 优先权： KR10-2002-0055970 20020914
- 主分类号： C23C16/20
- IPC分类号： C23C16/20 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L23/532 ; H01L23/48
摘要：
A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insulation film including nitrogen, forming a second metal film on a portion of the metal barrier layer in the recess, and forming a third metal film on the substrate, the recess and the insulation film.
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