发明授权
- 专利标题: Apparatus and method for forming deposited film
- 专利标题(中): 用于形成沉积膜的装置和方法
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申请号: US10650763申请日: 2003-08-29
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公开(公告)号: US06846521B2公开(公告)日: 2005-01-25
- 发明人: Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
- 申请人: Takeshi Shishido , Masahiro Kanai , Yuzo Koda , Takahiro Yajima
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2000-023022 20000131
- 主分类号: C23C16/503
- IPC分类号: C23C16/503 ; C23C16/509 ; C23C16/54 ; H01J37/32 ; H01L21/205 ; H01L31/04 ; C23C16/00
摘要:
A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.
公开/授权文献
- US20040035361A1 Apparatus and method for forming deposited film 公开/授权日:2004-02-26
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