发明授权
- 专利标题： System and method to form a composite film stack utilizing sequential deposition techniques
- 专利标题（中）： 使用顺序沉积技术形成复合膜堆的系统和方法
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申请号： US09885609申请日： 2001-06-20
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公开(公告)号： US06849545B2公开(公告)日： 2005-02-01
- 发明人: Alfred W. Mak , Mei Chang , Jeong Soo Byun , Hua Chung , Ashok Sinha , Moris Kori
- 申请人： Alfred W. Mak , Mei Chang , Jeong Soo Byun , Hua Chung , Ashok Sinha , Moris Kori
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser, Patterson & Sheridan
- 主分类号： C23C16/30
- IPC分类号： C23C16/30 ; H01L21/28 ; H01L21/285 ; H01L21/3205 ; H01L21/768 ; H01L23/52 ; H01L21/44
摘要：
A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.
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