- 专利标题： Minimizing degradation of SiC bipolar semiconductor devices
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申请号： US10046346申请日： 2001-10-26
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公开(公告)号： US06849874B2公开(公告)日： 2005-02-01
- 发明人: Joseph J. Sumakeris , Ranbir Singh , Michael James Paisley , Stephan Georg Mueller , Hudson M. Hobgood , Calvin H. Carter, Jr. , Albert Augustus Burk, Jr.
- 申请人： Joseph J. Sumakeris , Ranbir Singh , Michael James Paisley , Stephan Georg Mueller , Hudson M. Hobgood , Calvin H. Carter, Jr. , Albert Augustus Burk, Jr.
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Summa & Allan, P.A.
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L29/732 ; H01L29/744 ; H01L29/861 ; H01L29/161
摘要：
A bipolar device has at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.
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