发明授权
US06849957B2 Photomask including auxiliary mark area, semiconductor device and manufacturing method thereof
有权
包括辅助标记区域的光掩模，半导体器件及其制造方法
- 专利标题： Photomask including auxiliary mark area, semiconductor device and manufacturing method thereof
- 专利标题（中）： 包括辅助标记区域的光掩模，半导体器件及其制造方法
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申请号： US09725853申请日： 2000-11-30
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公开(公告)号： US06849957B2公开(公告)日： 2005-02-01
- 发明人: Masahiko Takeuchi , Koichiro Narimatsu , Atsushi Ueno
- 申请人： Masahiko Takeuchi , Koichiro Narimatsu , Atsushi Ueno
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2000-160017 20000530
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; G03F9/00 ; H01L21/027 ; H01L21/822 ; H01L23/544 ; H01L27/04
摘要：
A semiconductor device enabling precise and accurate measurement of an inspection mark in a simple manner is obtained. The semiconductor device includes a device forming area and a dicing line area arranged to surround the device forming area on a semiconductor substrate. In the dicing line area, first and second registration marks formed in different shots are provided, and the first and second registration marks include auxiliary marks for identifying the first and second registration marks.
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