Invention Grant
- Patent Title: Method for measuring step difference in a semiconductor device and apparatus for performing the same
- Patent Title (中): 用于测量半导体器件中的台阶差的方法及其执行方法
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Application No.: US10012562Application Date: 2001-12-12
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Publication No.: US06850332B2Publication Date: 2005-02-01
- Inventor: Chung-Sam Jun , Kye-Weon Kim , Yu-Sin Yang , Hyo-Hoo Kim
- Applicant: Chung-Sam Jun , Kye-Weon Kim , Yu-Sin Yang , Hyo-Hoo Kim
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine Francos & Whitt, PLLC
- Priority: KR2000-77374 20001216
- Main IPC: G01B11/02
- IPC: G01B11/02 ; G01B11/06 ; G03F7/20 ; H01L21/027 ; H01L21/66 ; G01B11/24
Abstract:
A method and an apparatus for measuring a step difference in a semiconductor device without making contact with the semiconductor device. A first beam is radiated onto a wafer so as to form a first focus on a first portion of the wafer, and a second beam is radiated onto the wafer so as to form a second focus on a second portion of the wafer. The step difference between the first portion and the second portion of the wafer is measured by calculating a vertical displacement distance of the wafer and a beam focusing device used to attain the first focus and the second focus.
Public/Granted literature
- US20020074518A1 Method for measuring step difference in a semiconductor device and apparatus for performing the same Public/Granted day:2002-06-20
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