公开(公告)号：US07355729B2

公开(公告)日：2008-04-08

申请号：US10912559

申请日：2004-08-06

申请人： Hwan-Shik Park ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kye-Weon Kim

发明人： Hwan-Shik Park ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kye-Weon Kim

IPC分类号： G01B11/28

CPC分类号： G01B11/06

摘要： An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.

摘要翻译： 一种测量衬底厚度的装置和方法。 第一光从具有已知厚度的标准样品反射。 光通过光聚焦透镜集中。 通过响应于集中的第一光的光强度的检测器将第一光转换成第一电信号。 第二个光从衬底反射，然后通过光聚焦透镜进行浓缩。 通过检测器响应于集中的第二光的光强度将第二光转换成第二电信号。 操作单元分别从第一和第二电信号确定第一和第二峰值。 操作单元通过使用与第一峰值相对应的标准距离，对应于第二峰值的基板的移动距离和标准样品的已知厚度来计算基板的厚度。

公开(公告)号：US20070190438A1

公开(公告)日：2007-08-16

申请号：US11675016

申请日：2007-02-14

申请人： Kye-Weon KIM ,  Yu-Sin YANG ,  Chung-Sam JUN ,  Yong-Wan KIM

发明人： Kye-Weon KIM ,  Yu-Sin YANG ,  Chung-Sam JUN ,  Yong-Wan KIM

IPC分类号： G03F1/00 ,  G03C5/00 ,  G03B27/42

CPC分类号： G03F7/70191 ,  G03B27/72 ,  G03F7/70558 ,  G03F7/70625

摘要： In an embodiment, a method of controlling a light intensity includes measuring a critical dimension distribution of a pattern on a substrate. The critical dimension distribution is formed using a first illumination having a first intensity distribution, which is irradiated onto the substrate through a photo mask. A second intensity distribution of the first illumination by regions of the photo mask, which is used for forming a pattern having uniform dimensions on the substrate, is then obtained based on a relation between the first intensity distribution and the critical dimension distribution. The first illumination having the first intensity distribution is converted into a second illumination having the second intensity distribution as by interposing an array of light controlling elements (e.g., LCD pixels, or motorized polarizing elements) within the light path.

摘要翻译： 在一个实施例中，控制光强度的方法包括测量衬底上图案的临界尺寸分布。 临界尺寸分布使用具有第一强度分布的第一照明形成，其通过光掩模照射到基底上。 基于第一强度分布和临界尺寸分布之间的关系，获得第一照明的第二强度分布，该区域用于形成具有均匀尺寸的图案的光掩模的区域。 具有第一强度分布的第一照明通过在光路内插入光控制元件（例如，LCD像素或电动偏振元件）的阵列而被转换成具有第二强度分布的第二照明。

公开(公告)号：US20070028771A1

公开(公告)日：2007-02-08

申请号：US11498017

申请日：2006-08-03

申请人： Ji-Young Shin ,  Chung-Sam Jun ,  Kye-Weon Kim

发明人： Ji-Young Shin ,  Chung-Sam Jun ,  Kye-Weon Kim

IPC分类号： B01D53/02

CPC分类号： B01D53/70 ,  B01D53/04 ,  B01D53/0454 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2256/26 ,  B01D2257/2066 ,  B01D2258/0216 ,  B01D2259/40083 ,  B01D2259/402 ,  Y02C20/30

摘要： PFC is recycled from a gas mixture using adsorption technology and techniques. Two adsorption units each include an adsorbent having a selectivity by which the PFC is selectively adsorbed with respect to the other gas(es) that make up the mixture. The gas mixture is selectively supplied to one of the first and second adsorption units and a condition is created in the first adsorption unit so that the PFC is adsorbed in the first adsorption unit. Once the adsorbent is saturated in the first adsorption unit, a condition is created in the first adsorption unit that causes the PFC to be desorbed. At this time, the gas mixture is selectively supplied to the second adsorption unit, and a condition is created in the second adsorption unit so that the PFC is adsorbed. Once the adsorbent is saturated in the second adsorption unit, a condition is created in the second adsorption unit that causes the PFC to be desorbed. High-purity PFC gas can be obtained from the exhaust gas even if the gas mixture is exhaust gas of a semiconductor device manufacturing process having a low concentration of PFC.

摘要翻译： 使用吸附技术和技术，从气体混合物回收PFC。 两个吸附单元各自包括具有选择性的吸附剂，通过该吸附剂相对于构成混合物的其它气体选择性地吸附PFC。 气体混合物被选择性地供应到第一和第二吸附单元之一，并且在第一吸附单元中产生条件，使得PFC吸附在第一吸附单元中。 一旦吸附剂在第一吸附单元中饱和，则在第一吸附单元中产生使PFC解吸的条件。 此时，将气体混合物选择性地供给到第二吸附单元，并且在第二吸附单元中产生条件以使PFC被吸附。 一旦吸附剂在第二吸附单元中饱和，则在引起PFC解吸的第二吸附单元中产生一个条件。 即使气体混合物是具有低浓度PFC的半导体器件制造方法的废气，也可以从废气中获得高纯度PFC气体。

公开(公告)号：US20070184565A1

公开(公告)日：2007-08-09

申请号：US11566637

申请日：2006-12-04

申请人： Hwan-Shik PARK ,  Sung-Gon KIM ,  Chung-Sam JUN ,  Kye-Weon KIM ,  Jang-Ik PARK ,  Won-Kwan SONG

发明人： Hwan-Shik PARK ,  Sung-Gon KIM ,  Chung-Sam JUN ,  Kye-Weon KIM ,  Jang-Ik PARK ,  Won-Kwan SONG

IPC分类号： H01L21/66

CPC分类号： H01L22/12

摘要： Embodiments of a test pattern and a method for measuring silicon etching depth are provided. After a contact-hole forming process, an optical critical dimension (OCD) is measured with respect to a test pattern formed on a semiconductor chip, so that the silicon etching depth may be analyzed in real time. Critical dimensions of contact holes in the actual working cells of the semiconductor circuit would then coincide with the OCD measurement of the contact holes of the test pattern. Consequently, etching conditions for forming a contact hole may be controlled in real time, and thus a yield of a semiconductor can be effectively improved.

摘要翻译： 提供测试图案的实施例和测量硅蚀刻深度的方法。 在接触孔形成处理之后，相对于形成在半导体芯片上的测试图案测量光临界尺寸（OCD），使得可以实时分析硅蚀刻深度。 半导体电路的实际工作单元中的接触孔的临界尺寸将与测试图案的接触孔的OCD测量重合。 因此，可以实时地控制用于形成接触孔的蚀刻条件，从而可以有效地提高半导体的产量。

公开(公告)号：US20060039598A1

公开(公告)日：2006-02-23

申请号：US11207772

申请日：2005-08-22

申请人： Kye-Weon Kim ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Sang-Mun Chon ,  Seong-Jin Kim ,  Byung-Sug Lee ,  Yu-Sin Yang

发明人： Kye-Weon Kim ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Sang-Mun Chon ,  Seong-Jin Kim ,  Byung-Sug Lee ,  Yu-Sin Yang

IPC分类号： G06K9/00

CPC分类号： G01N21/21 ,  G01N21/33 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/95615

摘要： A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.

摘要翻译： 公开了使用统计推断功能检查检查图案的方法。 关于由参考基板上的感兴趣单元处理形成的多个参考图案的光参考信号数据和参考图案特征数据，产生推理函数。

公开(公告)号：US20050083539A1

公开(公告)日：2005-04-21

申请号：US10912559

申请日：2004-08-06

申请人： Hwan-Shik Park ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kye-Weon Kim

发明人： Hwan-Shik Park ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kye-Weon Kim

IPC分类号： G01B11/06 ,  G01B11/28

CPC分类号： G01B11/06

摘要： An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.

摘要翻译： 一种测量衬底厚度的装置和方法。 第一光从具有已知厚度的标准样品反射。 光通过光聚焦透镜集中。 通过响应于集中的第一光的光强度的检测器将第一光转换成第一电信号。 第二个光从衬底反射，然后通过光聚焦透镜进行浓缩。 通过检测器响应于集中的第二光的光强度将第二光转换成第二电信号。 操作单元分别从第一和第二电信号确定第一和第二峰值。 操作单元通过使用与第一峰值相对应的标准距离，对应于第二峰值的基板的移动距离和标准样品的已知厚度来计算基板的厚度。

公开(公告)号：US07081952B2

公开(公告)日：2006-07-25

申请号：US10718817

申请日：2003-11-24

申请人： Kye-Weon Kim ,  Chung-Sam Jun ,  Hyun-Tae Kang

发明人： Kye-Weon Kim ,  Chung-Sam Jun ,  Hyun-Tae Kang

IPC分类号： G01N21/00

CPC分类号： G01N21/95607

摘要： A method for obtaining an image using a selective combination of wavelengths of light includes dispersing a light in accordance with wavelength bands of the light using a dispersing member, irradiating the dispersed light onto an object to measure reflectivities of the light reflected from the object in accordance with the wavelength bands of the light, comparing reflectivity differences between an objective region and a peripheral region of the object, selecting wavelength bands having the reflectivity differences indicated as either positive values or negative values, adjusting the dispersing member to transmit only the light having the selected wavelength bands, passing light only having the selected wavelength bands through the dispersing member to irradiate the light that has passed through the dispersing member onto the object, taking photographs of the object using the irradiated light, and superposing the photographs of the object to obtain the image of the object.

摘要翻译： 使用光的波长的选择性组合获得图像的方法包括使用分散构件分散根据光的波长带的光，将分散的光照射到物体上，以测量根据物体反射的光的反射率 利用光的波长带，比较物体的目标区域和外围区域之间的反射率差异，选择反射率差异的波长带表示为正值或负值，调节分散构件以仅透射具有 选择的波长带，使仅通过分散构件具有所选波长带的光将通过分散构件的光照射到物体上，使用照射光拍摄物体，并叠加物体的照片，以获得 对象的图像。

公开(公告)号：US06650408B2

公开(公告)日：2003-11-18

申请号：US09988683

申请日：2001-11-20

申请人： Chung-Sam Jun ,  Kye-Weon Kim ,  Yu-Sin Yang ,  Hyo-Hoo Kim

发明人： Chung-Sam Jun ,  Kye-Weon Kim ,  Yu-Sin Yang ,  Hyo-Hoo Kim

IPC分类号： G01N2100

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01N21/9501

摘要： A method for inspecting a polishing pad, an apparatus for performing the method, and a polishing device adopting the apparatus for preventing wafer defects. Polishing pad defects are detected by comparing optical data from a normal polishing pad, which does not cause wafer defects, with optical data from a polishing pad to be inspected. The respective optical data are obtained by radiating a beam into the polishing pad and then collecting and analyzing a beam reflected from the polishing pad.

公开(公告)号：US07385689B2

公开(公告)日：2008-06-10

申请号：US11207772

申请日：2005-08-22

申请人： Kye-Weon Kim ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Sang-Mun Chon ,  Seong-Jin Kim ,  Byung-Sug Lee ,  Yu-Sin Yang

发明人： Kye-Weon Kim ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Sang-Mun Chon ,  Seong-Jin Kim ,  Byung-Sug Lee ,  Yu-Sin Yang

IPC分类号： G01N21/00

CPC分类号： G01N21/21 ,  G01N21/33 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/95615

摘要： A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.

摘要翻译： 公开了使用统计推断功能检查检查图案的方法。 关于由参考基板上的感兴趣单元处理形成的多个参考图案的光参考信号数据和参考图案特征数据，产生推理函数。

公开(公告)号：US06870948B2

公开(公告)日：2005-03-22

申请号：US09977238

申请日：2001-10-16

申请人： Chung-sam Jun ,  Sang-Mun Chon ,  Sang-Bong Choi ,  Kye-Weon Kim ,  Sang-Hoon Lee ,  Yu-Sin Yang ,  Sang-Min Kim ,  Sang-Kil Lee

发明人： Chung-sam Jun ,  Sang-Mun Chon ,  Sang-Bong Choi ,  Kye-Weon Kim ,  Sang-Hoon Lee ,  Yu-Sin Yang ,  Sang-Min Kim ,  Sang-Kil Lee

IPC分类号： G01B15/00 ,  G01B15/08 ,  G01N15/00 ,  G01N15/14 ,  G01N23/20 ,  G01N23/225 ,  G06T1/00 ,  G06T7/00 ,  H01L21/66 ,  G06K9/00 ,  H01L21/8242

CPC分类号： G06T7/0004 ,  G01N15/1475 ,  G01N2015/0092 ,  G06T2207/30148 ,  H01J2237/2815

摘要： A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images. After comparing standardized image data values of the respective pixels with a predetermined threshold value, the number of pixels whose standardized image data value is greater than the threshold value is counted. The growth degree of grains on the surface of the wafer is calculated by numerating a ratio of the counted number with respect to a total number of the pixels contained within the analysis target image.

摘要翻译： 一种用于数值分析生长在半导体晶片的表面上的晶粒的生长度的方法和装置，其中通过使用由半导体晶片的表面扫描的半导体晶片的表面的图像文件自动计算和计算晶粒的生长度 SEM。 使用SEM扫描晶片的表面的预定部分，并将扫描的SEM图像同时存储到数据库中。 自动数值程序将网格应用于分析屏幕框架，并在测量图像上选择分析区域。 此后，使用相邻像素的图像数据的平均值对由网格指定的各个像素执行用于减少噪声的影响的平滑处理。 然后基于相应的图像执行标准化处理，以便去除所测量的图像之间的亮度差异。 在将各像素的标准化图像数据值与预定阈值进行比较之后，对标准化图像数据值大于阈值的像素数进行计数。 通过对计数的数量相对于分析对象图像中包含的像素的总数的比率进行计算来计算晶片表面上的晶粒的生长度。