发明授权
- 专利标题： Electroetching process and system
- 专利标题（中）： 电蚀过程和系统
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申请号： US09841622申请日： 2001-04-23
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公开(公告)号： US06852630B2公开(公告)日： 2005-02-08
- 发明人: Bulent M. Basol , Cyprian Uzoh , Halit N. Yakupoglu , Homayoun Talieh
- 申请人： Bulent M. Basol , Cyprian Uzoh , Halit N. Yakupoglu , Homayoun Talieh
- 申请人地址： US CA Milpitas
- 专利权人： ASM Nutool, Inc.
- 当前专利权人： ASM Nutool, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Knobbe, Martens, Olson & Bear LLP.
- 主分类号： B23H5/08
- IPC分类号： B23H5/08 ; C25F3/14 ; H01L21/288 ; H01L21/321 ; H01L21/3213 ; H01L21/768 ; H01L21/302
摘要：
A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.
公开/授权文献
- US20020153097A1 Electroetching process and system 公开/授权日：2002-10-24
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